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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3A60DA(STA4,Q,M)

Name: TK3A60DA(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK3A60DA(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3A60DA(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK3A60DA(STA4,Q,M).pdf

Description:: MOSFET N-CH 600V 2.5A TO220SIS

Quantity:: RFQ Add To RFQ list

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Inventory:42

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Product details

Overview

TK3A60DA(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 600 V drain-source breakdown voltage (V_(BR)DSS), 2.2 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 1.3 A, and 1.5 S typical forward transfer admittance |Y_fs| - enabling efficient high-voltage DC-DC conversion in industrial SMPS.

For engineers reviewing the TK3A60DA(STA4,Q,M) datasheet, TK3A60DA(STA4,Q,M) pinout, TK3A60DA(STA4,Q,M) application, or TK3A60DA(STA4,Q,M) equivalent, key selection considerations include avalanche ruggedness (E_AS = 180 mJ), gate threshold range (2.4–4.4 V), thermal resistance (R_th(ch-c) = 4.17 °C/W), and RoHS-compliant SC-67 package with verified 3-pin terminal assignment.

Technical Context

This MOSFET operates in enhancement mode with a specified V_th window of 2.4–4.4 V and supports reliable hard-switching in flyback and forward converters up to 600 V bus voltage. Its low C_iss (380 pF) and moderate Q_g (9 nC) enable fast turn-on while maintaining gate drive simplicity.

The device integrates an intrinsic body diode with V_DSF = −1.7 V at I_DR = 2.5 A and t_rr = 700 ns, supporting synchronous rectification alternatives in lower-frequency topologies. Avalanche-rated operation (I_AR = 2.5 A, E_AS = 180 mJ) allows robust handling of inductive switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands DC input up to 600 V in offline SMPS without breakdown
R_DS(ON)	2.2 Ω (typ.) - Enables <2.5 A continuous conduction with ≤5.5 W conduction loss at T_c = 25°C
\|Y_fs\|	1.5 S (typ.) - High transconductance improves small-signal gain and current control linearity
E_AS	180 mJ - Supports single-pulse inductive energy absorption (e.g., transformer leakage spikes)
R_th(ch-c)	4.17 °C/W - Allows 30 W dissipation with ≤125°C channel-to-case temperature rise
t_rr	700 ns - Limits reverse recovery losses during diode commutation in quasi-resonant designs
Q_g	9 nC - Compatible with standard 1-A peak gate drivers for <100 kHz switching

Pinout & Package

TK3A60DA(STA4,Q,M) uses the SC-67 (Toshiba 2-10U1B) through-hole package with 3 terminals: Gate (Pin 1), Drain (Pin 2), Source (Pin 3). Thermal performance is optimized via direct metal tab mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; threshold range 2.4–4.4 V ensures compatibility with 5 V and 3.3 V controllers
2 (Drain)	High-side power terminal	Connected to primary winding or HV rail; rated for 600 V blocking and 2.5 A DC/10 A pulsed current
3 (Source)	Reference and return path	Serves as signal ground reference for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 3.5 μC)

Key Features

Feature	Design Value
π-MOSⅦ process technology	Optimized cell layout reduces R_DS(ON) × Q_g figure-of-merit for improved efficiency in 50–100 kHz SMPS
Avalanche-rated operation	Guaranteed 180 mJ single-pulse energy handling eliminates need for external clamping in cost-sensitive flyback designs
Low IDSS leakage	≤10 μA at 600 V enables stable high-impedance off-state in standby and light-load modes
RoHS-compliant construction	Meets Directive 2011/65/EU; marking includes [[G]]/RoHS identifier for traceable compliance verification

Applications

Industrial Switch-Mode Power Supplies	AC-DC Adapters for Office Equipment
Use Scenario: 60–150 W offline flyback converter powering PLC I/O modules with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side switching transistor controlling energy transfer; operates at 65 kHz with ZVS-assisted turn-on. Use Value: 600 V rating accommodates 385 V DC link with margin; R_DS(ON) = 2.2 Ω keeps conduction loss under 3.5 W at full load.	Use Scenario: Compact 90 W desktop PC auxiliary power supply with active PFC front-end and dual-output flyback. IC Role / Device Role / Timing Role: Main switch in main flyback stage; driven by UC3845-based controller with fixed 100 kHz frequency. Use Value: Low Q_g (9 nC) minimizes gate drive loss; E_AS = 180 mJ absorbs leakage inductance spikes without snubber redesign.
LED Driver Power Stages	UPS Inverter Half-Bridge Legs
Use Scenario: Constant-current LED driver for street lighting using quasi-resonant flyback topology with 230 VAC input. IC Role / Device Role / Timing Role: High-side switch regulating output current via primary-side sensing; operates in DCM with variable frequency. Use Value: Body diode t_rr = 700 ns limits switching loss during valley switching; V_th range ensures stable turn-on across temperature.	Use Scenario: 1 kVA online UPS inverter stage using discrete half-bridge configuration with isolated gate drivers. IC Role / Device Role / Timing Role: Low-side switch in 50/60 Hz PWM-modulated H-bridge; conducts 2.5 A RMS with 10 A surge capability. Use Value: IDP = 10 A pulse rating handles motor startup surges; R_th(ch-c) = 4.17 °C/W enables forced-air cooling without oversized heatsinks.

Industrial Switch-Mode Power Supplies

AC-DC Adapters for Office Equipment

Use Scenario: 60–150 W offline flyback converter powering PLC I/O modules with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor controlling energy transfer; operates at 65 kHz with ZVS-assisted turn-on.

Use Value: 600 V rating accommodates 385 V DC link with margin; R_DS(ON) = 2.2 Ω keeps conduction loss under 3.5 W at full load.

Use Scenario: Compact 90 W desktop PC auxiliary power supply with active PFC front-end and dual-output flyback.

IC Role / Device Role / Timing Role: Main switch in main flyback stage; driven by UC3845-based controller with fixed 100 kHz frequency.

Use Value: Low Q_g (9 nC) minimizes gate drive loss; E_AS = 180 mJ absorbs leakage inductance spikes without snubber redesign.

LED Driver Power Stages

UPS Inverter Half-Bridge Legs

Use Scenario: Constant-current LED driver for street lighting using quasi-resonant flyback topology with 230 VAC input.

IC Role / Device Role / Timing Role: High-side switch regulating output current via primary-side sensing; operates in DCM with variable frequency.

Use Value: Body diode t_rr = 700 ns limits switching loss during valley switching; V_th range ensures stable turn-on across temperature.

Use Scenario: 1 kVA online UPS inverter stage using discrete half-bridge configuration with isolated gate drivers.

IC Role / Device Role / Timing Role: Low-side switch in 50/60 Hz PWM-modulated H-bridge; conducts 2.5 A RMS with 10 A surge capability.

Use Value: IDP = 10 A pulse rating handles motor startup surges; R_th(ch-c) = 4.17 °C/W enables forced-air cooling without oversized heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V V_(BR)DSS, R_DS(ON) = 3.3 Ω (typ.), Zener-protected gate, TO-220FP package	Higher R_DS(ON) increases conduction loss by ~50%; integrated gate protection simplifies ESD handling	Prefer when gate robustness outweighs efficiency targets; not drop-in due to different thermal pad layout
FQP6N60C	600 V V_(BR)DSS, R_DS(ON) = 2.3 Ω (typ.), TO-220 package, no avalanche rating	Lacks guaranteed E_AS; higher R_th(ch-a) (62.5 °C/W vs. 4.17 °C/W) demands larger heatsink area	Select for cost-sensitive non-avalanche applications where layout space permits larger thermal solution

Compared with STP3NK60ZFP and FQP6N60C, TK3A60DA(STA4,Q,M) delivers superior thermal performance (R_th(ch-c) = 4.17 °C/W), certified avalanche ruggedness (180 mJ), and tighter R_DS(ON) tolerance - making it optimal for compact, high-reliability industrial SMPS where thermal density and transient immunity are critical.

Availability

TK3A60DA(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters for office equipment, and LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for TK3A60DA(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK3A60DA(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for energy-efficient, thermally constrained offline switching regulators operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for TK3A60DA(STA4,Q,M) at case temperature 25°C?

The TK3A60DA(STA4,Q,M) has a DC drain current rating of 2.5 A at T_c = 25°C, as defined in its Absolute Maximum Ratings table. This value assumes proper heatsinking to maintain channel temperature ≤150°C. At elevated case temperatures, derating is required per the PD–Tc curve - e.g., at T_c = 100°C, the usable continuous current drops to approximately 1.2 A.

Does TK3A60DA(STA4,Q,M) have a built-in body diode, and what are its key parameters?

Yes, TK3A60DA(STA4,Q,M) includes an integral body diode. Its key parameters are forward voltage V_DSF = −1.7 V at I_DR = 2.5 A and reverse recovery time t_rr = 700 ns, measured with dI_DR/dt = 100 A/μs. The associated reverse recovery charge Q_rr is 3.5 μC, which directly impacts switching loss in topologies relying on diode conduction.

Is TK3A60DA(STA4,Q,M) suitable for use in avalanche-mode circuits, and what is its rated single-pulse energy?

Yes, TK3A60DA(STA4,Q,M) is explicitly rated for single-pulse avalanche operation with E_AS = 180 mJ under defined test conditions (V_DD = 90 V, L = 50 mH, I_AR = 2.5 A, R_G = 25 Ω). This rating enables safe operation during inductive turn-off transients in flyback and forward converters without external clamping components.

What package type and pin configuration does TK3A60DA(STA4,Q,M) use?

TK3A60DA(STA4,Q,M) uses the SC-67 package (JEITA designation), also known as Toshiba 2-10U1B. It has three leads: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The metal tab is electrically connected to the Drain and serves as the primary thermal path to the heatsink.

What is the gate threshold voltage range for TK3A60DA(STA4,Q,M), and how does it affect drive requirements?

The gate threshold voltage V_th for TK3A60DA(STA4,Q,M) is specified from 2.4 V to 4.4 V at V_DS = 10 V and I_D = 1 mA. This wide range ensures reliable turn-on with standard 5 V or 10 V gate drivers while accommodating process variation. For full enhancement, V_GS ≥ 10 V is recommended to achieve the rated R_DS(ON) of 2.2 Ω.

TK3A60DA(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK3A60DA(STA4,Q,M) FAQ

1.How can I place an order for TK3A60DA(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3A60DA(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3A60DA(STA4,Q,M) reliable?

The price and inventory of TK3A60DA(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3A60DA(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK3A60DA(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3A60DA(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3A60DA(STA4,Q,M)?

TK3A60DA(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3A60DA(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3A60DA(STA4,Q,M)?

For technical support, including TK3A60DA(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3A60DA(STA4,Q,M) requirements.

6.How does Aetrix verify that TK3A60DA(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK3A60DA(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3A60DA(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK3A60DA(STA4,Q,M)?

All TK3A60DA(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK3A60DA(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3A60DA(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK3A60DA(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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