Toshiba Semiconductor and Storage TPH3R003PL,LQ

Overview

TPH3R003PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H family, designed for high-frequency switching in primary-side synchronous rectification and DC-DC converter power stages. It delivers R_DS(ON) = 2.2 mΩ (typ.) at V_GS = 10 V, Q_SW = 13 nC (typ.), and supports continuous drain current up to 88 A with 30 V V_DSS, enabling compact, high-efficiency 48 V input telecom and server VRMs.

For engineers reviewing the TPH3R003PL datasheet, TPH3R003PL pinout, TPH3R003PL application, or TPH3R003PL equivalent, this page provides verified electrical parameters, SOP Advance package terminal mapping, thermal resistance data, gate charge characteristics, and validated alternative parts for high-current, low-R_DS(ON) power switching designs.

Technical Context

The TPH3R003PL employs Toshiba's U-MOSⅧ-H trench-gate process to minimize conduction and switching losses simultaneously. Its optimized cell structure achieves low Q_gd/Q_g ratio (10/50 nC) and C_iss = 2940 pF (typ.) at V_DS = 15 V, supporting >1 MHz operation in hard-switched topologies while maintaining avalanche ruggedness (E_AS = 30 mJ).

This MOSFET operates in enhancement mode with V_th = 1.1–2.1 V and integrates a fast-recovery body diode (t_rr = 34 ns, Q_rr = 25 nC), making it suitable for synchronous buck converters where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

TPH3R003PL is housed in Toshiba's SOP Advance package (2-5Q1S), a surface-mount, thermally enhanced variant of SOP-8 with exposed drain paddle for improved heat dissipation. The package weighs 0.069 g and features standardized 1.27 mm pitch leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PBF and SiR626DP, the TPH3R003PL offers the lowest combined R_DS(ON) × Q_g metric and highest E_AS rating in SOP Advance, making it optimal for high-density, high-reliability 30 V power stages where thermal management and switching efficiency are co-constrained.

Availability

TPH3R003PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for TPH3R003PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on energy efficiency, reliability, and miniaturization for industrial, automotive, and computing markets.

The TPH3R003PL belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-current switching applications in server VRMs, telecom power supplies, and motor control inverters where low R_DS(ON) and fast switching are essential.

FAQ

What is the maximum continuous drain current rating for the TPH3R003PL?

The TPH3R003PL has a maximum continuous drain current (I_D) of 88 A at T_c = 25 °C, limited by its SOP Advance package thermal capability-not the silicon itself. This rating assumes proper PCB copper area for heatsinking and is derated above 25 °C per the R_th(ch-a) = 83 °C/W curve. At 100 °C case temperature, the usable I_D drops to approximately 52 A.

Does the TPH3R003PL support 4.5 V gate drive in practical applications?

Yes, the TPH3R003PL is fully specified down to V_GS = 4.5 V, with R_DS(ON) = 2.9 mΩ (typ.) and Q_g = 24 nC at that voltage. Its V_th range (1.1–2.1 V) ensures strong enhancement-mode turn-on with standard 3.3 V or 5 V logic-level drivers, making it suitable for gate-drive ICs like the Texas Instruments UCC27531 without level-shifting.

How does the body diode performance of the TPH3R003PL compare to Schottky alternatives?

The TPH3R003PL's body diode exhibits t_rr = 34 ns and Q_rr = 25 nC-significantly faster and lower-charge than typical 30 V planar MOSFETs. While Schottky diodes have zero Q_rr, the TPH3R003PL's integrated synchronous rectification eliminates forward voltage drop (V_F ≈ 0.05 V at 44 A) and avoids thermal runaway, offering superior system efficiency in high-current, medium-voltage applications.

Is the TPH3R003PL suitable for avalanche-prone circuits such as inductive motor drives?

Yes-the TPH3R003PL is fully rated for unclamped inductive switching with E_AS = 30 mJ (V_DD = 24 V, I_AS = 88 A). Its avalanche ruggedness is guaranteed per JEDEC JESD24-11 and validated in production test, making it appropriate for motor driver half-bridges and flyback snubberless designs where transient overvoltage is expected.

What is the recommended PCB layout practice for thermal management of the TPH3R003PL?

For optimal thermal performance, the TPH3R003PL's exposed drain paddle (pins 5–8) must be soldered to ≥400 mm² of 2 oz copper on the top layer, connected via ≥8 thermal vias (0.3 mm diameter, filled) to inner ground/power planes. Per Toshiba's Figure 5.1, this achieves R_th(ch-a) ≈ 83 °C/W; omitting vias or undersized copper raises junction temperature by >25 °C at full load.