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Toshiba Semiconductor and Storage TK5A50D(STA4,Q,M)

Name: TK5A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK5A50D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK5A50D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK5A50D(STA4,Q,M).pdf

Description:: MOSFET N-CH 500V 5A TO220SIS

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Product details

Overview

TK5A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It delivers 5 A continuous drain current, 500 V drain-source breakdown voltage, and a typical R_DS(ON) of 1.3 Ω at V_GS = 10 V, enabling efficient DC-DC conversion in industrial power supplies.

For engineers reviewing the TK5A50D(STA4,Q,M) datasheet, TK5A50D(STA4,Q,M) pinout, TK5A50D(STA4,Q,M) application, or TK5A50D(STA4,Q,M) equivalent, key selection criteria include avalanche energy rating (150 mJ), gate threshold range (2.4–4.4 V), thermal resistance (3.57 °C/W channel-to-case), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET operates in enhancement mode with a guaranteed V_th window of 2.4–4.4 V, ensuring reliable turn-on under varied gate drive conditions. Its low R_DS(ON) and high ⎪Y_fs⎪ (3.0 S typ.) support fast switching and reduced conduction losses in hard-switched topologies.

The device features built-in avalanche ruggedness (E_AS = 150 mJ, I_AR = 5 A) and a robust safe operating area up to 500 V/5 A DC, validated under T_c = 25°C with linear derating above that temperature. Thermal design is enabled by R_th(ch-c) = 3.57 °C/W and R_th(ch-a) = 62.5 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
R_DS(ON) (typ.)	1.3 Ω @ V_GS = 10 V - enables <1.6 W conduction loss at 5 A, reducing heatsink requirements
I_D (cont.)	5 A - rated for continuous operation at T_c = 25°C, scalable with thermal management
E_AS	150 mJ - withstands single-pulse inductive energy without failure in flyback or forward converters
V_th range	2.4–4.4 V - ensures gate drive compatibility with standard 5 V or 10 V controllers
C_iss	490 pF - determines gate drive strength requirement; compatible with common PWM ICs
Q_g	11 nC - defines total gate charge for switching loss estimation and driver sizing

Pinout & Package

TK5A50D(STA4,Q,M) uses the SC-67 (Toshiba 2-10U1B) through-hole package with 3 leads and a weight of 1.7 g. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control input requiring ≤±30 V gate-source voltage; low input capacitance enables fast switching
2 (Center)	Drain	Main high-voltage power terminal; thermally coupled to case for heatsinking
3 (Right)	Source	Power return path and reference for gate drive; connects to ground or low-side switch node

Key Features

Feature	Design Value
Low R_DS(ON)	1.3 Ω typ. reduces I²R losses in high-current DC-DC stages, improving efficiency >90% at full load
High ⎪Y_fs⎪	3.0 S typ. provides strong transconductance for stable gain and fast response to gate voltage changes
Avalanche-rated	150 mJ single-pulse E_AS allows operation in inductive switching circuits without external snubbers
Enhancement-mode V_th	2.4–4.4 V ensures turn-on only with active gate drive, preventing unintended conduction during startup or fault
RoHS-compliant marking	[[G]]/RoHS COMPATIBLE label confirms compliance with EU Directive 2011/65/EU for lead-free manufacturing

Applications

Industrial AC-DC Power Supplies	Offline Flyback Converters
Use Scenario: Primary-side switching in 30–60 W universal-input (85–265 VAC) power supplies for PLCs and HMIs. IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling energy transfer via transformer primary winding. Use Value: 500 V V_DSS and 150 mJ E_AS ensure robustness against line surges and transformer leakage spikes.	Use Scenario: Main switch in isolated 12 V/5 A flyback for medical auxiliary power rails. IC Role / Device Role / Timing Role: Fast-turning power switch synchronized to PWM controller, handling peak currents up to 20 A pulsed. Use Value: Low Q_g (11 nC) and fast t_r/t_f (18 ns/8 ns) minimize switching losses at 65–100 kHz.
DC-DC Boost Converters	Motor Drive Half-Bridge Stages
Use Scenario: Step-up stage in solar charge controllers boosting 12–24 V battery input to 48 V system bus. IC Role / Device Role / Timing Role: High-side boost switch operating with 100% duty-cycle capability limited only by thermal design. Use Value: R_DS(ON) = 1.3 Ω keeps conduction loss below 330 mW at 5 A, simplifying thermal layout.	Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: Ground-referenced power switch controlling motor current direction and braking via PWM. Use Value: V_th range (2.4–4.4 V) guarantees clean turn-on with 3.3 V or 5 V logic-level microcontroller outputs.

Industrial AC-DC Power Supplies

Offline Flyback Converters

Use Scenario: Primary-side switching in 30–60 W universal-input (85–265 VAC) power supplies for PLCs and HMIs.

IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling energy transfer via transformer primary winding.

Use Value: 500 V V_DSS and 150 mJ E_AS ensure robustness against line surges and transformer leakage spikes.

Use Scenario: Main switch in isolated 12 V/5 A flyback for medical auxiliary power rails.

IC Role / Device Role / Timing Role: Fast-turning power switch synchronized to PWM controller, handling peak currents up to 20 A pulsed.

Use Value: Low Q_g (11 nC) and fast t_r/t_f (18 ns/8 ns) minimize switching losses at 65–100 kHz.

DC-DC Boost Converters

Motor Drive Half-Bridge Stages

Use Scenario: Step-up stage in solar charge controllers boosting 12–24 V battery input to 48 V system bus.

IC Role / Device Role / Timing Role: High-side boost switch operating with 100% duty-cycle capability limited only by thermal design.

Use Value: R_DS(ON) = 1.3 Ω keeps conduction loss below 330 mW at 5 A, simplifying thermal layout.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for factory automation actuators.

IC Role / Device Role / Timing Role: Ground-referenced power switch controlling motor current direction and braking via PWM.

Use Value: V_th range (2.4–4.4 V) guarantees clean turn-on with 3.3 V or 5 V logic-level microcontroller outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(ON) = 1.4 Ω, Zener-protected gate, TO-220FP package	Lower I_D rating and higher R_DS(ON); requires tighter thermal design at 5 A	Preferred where integrated gate protection is required and lower peak current suffices
IRFBC40APBF	500 V, 6.2 A, R_DS(ON) = 1.2 Ω, TO-220AB package, no avalanche rating specified	Higher current rating but lacks published E_AS data; not validated for repetitive avalanche stress	Selected when higher continuous current is needed and circuit avoids inductive energy storage

Compared with TK5A50D(STA4,Q,M), STP5NK50ZFP offers gate protection at the cost of current headroom, while IRFBC40APBF trades avalanche ruggedness for higher I_D and slightly lower R_DS(ON)-making TK5A50D(STA4,Q,M) optimal for reliability-critical flyback or forward converters.

Availability

TK5A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, offline flyback converters, and DC-DC boost applications requiring stable component supply, long-lifecycle support, and RoHS-compliant through-hole packaging.

Supply support for TK5A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.

The π-MOSⅦ series, including TK5A50D(STA4,Q,M), was developed specifically for high-voltage switching regulators and offline power conversion, prioritizing low R_DS(ON), avalanche ruggedness, and gate drive compatibility.

FAQ

What is the maximum continuous drain current for TK5A50D(STA4,Q,M) at 25°C case temperature?

The TK5A50D(STA4,Q,M) supports 5 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. Derating is required above 25°C case temperature per the PD–T_c curve, with R_th(ch-c) = 3.57 °C/W defining thermal limits. At T_c = 100°C, the usable I_D drops to approximately 2.8 A.

Does TK5A50D(STA4,Q,M) have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK5A50D(STA4,Q,M) includes a parasitic body diode with V_DSF = −1.7 V at I_DR = 5 A and reverse recovery time t_rr = 1000 ns. Its Q_rr is 5.0 μC under specified test conditions (dI_DR/dt = 100 A/μs). These values indicate moderate reverse recovery performance-suitable for non-synchronous rectification in flyback converters but not recommended for high-frequency synchronous rectification.

What gate drive voltage is required to fully enhance TK5A50D(STA4,Q,M)?

TK5A50D(STA4,Q,M) is fully enhanced at V_GS = 10 V, delivering its specified R_DS(ON) of 1.3 Ω. Its gate threshold voltage V_th ranges from 2.4 V to 4.4 V, meaning it begins conducting significantly above ~3 V but requires ≥8 V for reliable low-resistance operation across process and temperature variation. A 10 V gate drive ensures minimal R_DS(ON) spread and optimal efficiency.

Is TK5A50D(STA4,Q,M) suitable for avalanche operation, and what are the test conditions?

Yes, TK5A50D(STA4,Q,M) is rated for single-pulse avalanche with E_AS = 150 mJ. Test conditions are V_DD = 90 V, T_ch = 25°C (initial), L = 10.2 mH, R_G = 25 Ω, and I_AR = 5 A. Repetitive avalanche is limited to E_AR = 3.5 mJ due to thermal constraints. Designers must verify energy per pulse remains within E_AS and avoid exceeding T_ch = 150°C during events.

What is the package type and lead configuration of TK5A50D(STA4,Q,M)?

TK5A50D(STA4,Q,M) uses the SC-67 package (JEITA designation), also known as Toshiba 2-10U1B-a through-hole, 3-lead package with drain-connected tab. Pin 1 is Gate, Pin 2 is Drain (case), and Pin 3 is Source. The package supports manual or wave soldering and provides mechanical stability for high-power board-level mounting.

TK5A50D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK5A50D(STA4,Q,M) FAQ

1.How can I place an order for TK5A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5A50D(STA4,Q,M) reliable?

The price and inventory of TK5A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK5A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5A50D(STA4,Q,M)?

TK5A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5A50D(STA4,Q,M)?

For technical support, including TK5A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK5A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK5A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK5A50D(STA4,Q,M)?

All TK5A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK5A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK5A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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