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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK46E08N1,S1X

Name: TK46E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK46E08N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK46E08N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK46E08N1,S1X.pdf

Description:: MOSFET N-CH 80V 80A TO220

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Product details

Overview

TK46E08N1,S1X from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drives. It delivers 80 V V_DSS, 6.9 mΩ R_DS(ON) (typ. at V_GS = 10 V), and 80 A continuous drain current (T_C = 25 °C), operating reliably up to 150 °C channel temperature.

For engineers reviewing the TK46E08N1,S1X datasheet, TK46E08N1,S1X pinout, TK46E08N1,S1X application, or TK46E08N1,S1X equivalent, key selection criteria include low conduction loss in high-current synchronous buck stages, avalanche ruggedness (E_AS = 59 mJ), thermal performance with TO-220 heatsink mounting, and gate charge (Q_g = 37 nC) for optimized PWM switching efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low R_DS(ON) while maintaining robust avalanche capability and fast switching. Its enhancement-mode operation (V_th = 2.0–4.0 V) ensures reliable gate control with standard 10 V logic-level drive, and its integrated body diode supports freewheeling in hard-switched topologies.

The device is characterized for operation under pulsed conditions (I_DP = 169 A, t = 1 ms) and features low dynamic parameters: C_iss = 2500 pF, C_rss = 22 pF, and t_on/t_off = 30/51 ns (V_DD ≈ 64 V, I_D = 46 A), enabling high-frequency (>100 kHz) power conversion without excessive gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage for use in 48 V input systems and industrial 24–60 V bus applications
R_DS(ON)	6.9 mΩ (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for thermally constrained designs
I_D (DC)	80 A at T_C = 25 °C - Supports high-current output stages when mounted on heatsink with R_th(ch-c) = 1.21 °C/W
E_AS	59 mJ - Rated single-pulse avalanche energy ensures reliability during inductive load switching transients
Q_g	37 nC - Total gate charge determines required gate driver peak current for 100–500 kHz switching
t_r/t_f	11 ns / 17 ns - Fast intrinsic switching times reduce overlap loss in synchronous rectification
R_th(ch-a)	83.3 °C/W (unmounted) - Confirms necessity of heatsink mounting for sustained power dissipation

Pinout & Package

TK46E08N1,S1X is housed in a through-hole TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink attachment. The package weighs 1.93 g and features standardized lead spacing for automated insertion.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤±20 V gate-source voltage; sensitive to ESD - must be handled with grounding precautions
2	Drain (heatsink)	Main high-side current path; electrically connected to metal tab - requires insulating washer if heatsink is grounded
3	Source	Reference node for gate drive and current sensing; common return for load current in low-side switch configuration

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Enables 6.9 mΩ R_DS(ON) at 80 V rating - improves power density vs. planar MOSFETs in same voltage class
Low Q_gd/Q_g ratio	9.8 nC / 37 nC = 0.26 - reduces Miller-induced switching delay and improves controllability in hard-switched converters
Body diode t_rr	59 ns - enables efficient freewheeling in non-synchronous buck and flyback topologies without external Schottky
Avalanche-rated	Guaranteed E_AS = 59 mJ - allows safe operation under inductive turn-off stress without snubber circuits
Enhancement-mode threshold	V_th = 2.0–4.0 V - ensures clean turn-on with 3.3 V or 5 V microcontroller GPIO, avoiding partial-conduction risk

Applications

Server VRM Power Stage	Industrial Motor Drive Inverter
Use Scenario: High-current, high-efficiency 12 V input → 0.8–1.8 V output synchronous buck converter for CPU/GPU core power delivery. IC Role / Device Role / Timing Role: Low-side power switch handling up to 80 A DC current with minimal conduction loss and fast switching transitions. Use Value: 6.9 mΩ R_DS(ON) reduces I²R loss by >30% vs. comparable 80 V MOSFETs, directly improving VRM efficiency and thermal margin.	Use Scenario: Three-phase inverter stage driving 1–3 kW AC induction or BLDC motors in factory automation equipment. IC Role / Device Role / Timing Role: High-current, avalanche-rugged switching element in half-bridge leg, conducting motor phase current and absorbing inductive kickback. Use Value: 59 mJ E_AS rating eliminates need for external clamping diodes during motor stall or rapid deceleration events.
Telecom DC-DC Brick	Solar Microinverter DC Link
Use Scenario: 48 V input isolated forward or LLC resonant converter supplying 12 V/24 V auxiliary rails in telecom base station power systems. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side high-current switch in high-frequency power stage. Use Value: Low C_rss (22 pF) minimizes voltage-dependent capacitance variation, stabilizing ZVS timing across wide input voltage range.	Use Scenario: DC link switching in 250–350 V PV string-connected microinverters, where reliability under partial shading and grid fault conditions is critical. IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor in full-bridge or H-bridge inverter output stage. Use Value: 80 V V_DSS provides sufficient margin over 350 V DC link with transient spikes, while R_DS(ON) ensures <1.5 W loss at 30 A RMS.

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-current, high-efficiency 12 V input → 0.8–1.8 V output synchronous buck converter for CPU/GPU core power delivery.

IC Role / Device Role / Timing Role: Low-side power switch handling up to 80 A DC current with minimal conduction loss and fast switching transitions.

Use Value: 6.9 mΩ R_DS(ON) reduces I²R loss by >30% vs. comparable 80 V MOSFETs, directly improving VRM efficiency and thermal margin.

Use Scenario: Three-phase inverter stage driving 1–3 kW AC induction or BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: High-current, avalanche-rugged switching element in half-bridge leg, conducting motor phase current and absorbing inductive kickback.

Use Value: 59 mJ E_AS rating eliminates need for external clamping diodes during motor stall or rapid deceleration events.

Telecom DC-DC Brick

Solar Microinverter DC Link

Use Scenario: 48 V input isolated forward or LLC resonant converter supplying 12 V/24 V auxiliary rails in telecom base station power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or secondary-side high-current switch in high-frequency power stage.

Use Value: Low C_rss (22 pF) minimizes voltage-dependent capacitance variation, stabilizing ZVS timing across wide input voltage range.

Use Scenario: DC link switching in 250–350 V PV string-connected microinverters, where reliability under partial shading and grid fault conditions is critical.

IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor in full-bridge or H-bridge inverter output stage.

Use Value: 80 V V_DSS provides sufficient margin over 350 V DC link with transient spikes, while R_DS(ON) ensures <1.5 W loss at 30 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80 V V_DSS, 8.5 mΩ R_DS(ON), TO-220, higher Q_g (70 nC)	Higher gate drive requirement; less suitable for high-frequency (>300 kHz) operation	Prefer TK46E08N1,S1X where lower R_DS(ON) and faster switching are needed for efficiency-critical designs
IRF1404ZPBF	40 V V_DSS, 4.7 mΩ R_DS(ON), TO-220, lower voltage rating	Not suitable for 48 V+ bus applications due to insufficient blocking voltage margin	Only consider IRF1404ZPBF in ≤24 V systems where its lower R_DS(ON) offsets voltage limitation

Compared with STP80NF55-08 and IRF1404ZPBF, TK46E08N1,S1X offers the optimal balance of 80 V rating, ultra-low 6.9 mΩ on-resistance, and moderate 37 nC gate charge - making it preferred for high-efficiency, high-current 48 V industrial and telecom power stages where thermal headroom and switching loss are critical constraints.

Availability

TK46E08N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and solar microinverter DC link stages requiring stable component supply and long-term manufacturability.

Supply support for TK46E08N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete power MOSFET design and manufacturing.

The TK46E08N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current switching applications in industrial, telecom, and computing power supplies where low R_DS(ON), avalanche ruggedness, and thermal reliability are essential.

FAQ

What is the maximum continuous drain current rating for TK46E08N1,S1X?

The TK46E08N1,S1X is rated for 80 A continuous drain current (I_D) at case temperature T_C = 25 °C. This rating assumes proper heatsinking - with R_th(ch-c) = 1.21 °C/W - and derates linearly as case temperature rises, reaching zero at T_C = 100 °C per the Safe Operating Area curve in the datasheet.

Does TK46E08N1,S1X support gate drive from a 3.3 V microcontroller?

No - TK46E08N1,S1X has a gate threshold voltage (V_th) of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 6.9 mΩ R_DS(ON). A 3.3 V drive would result in high on-resistance and excessive conduction loss. A dedicated gate driver or level-shifting circuit is required to deliver 10–15 V to the gate of TK46E08N1,S1X.

Is TK46E08N1,S1X suitable for avalanche operation in inductive switching?

Yes - TK46E08N1,S1X is fully rated for single-pulse avalanche with E_AS = 59 mJ at T_ch = 25 °C. This makes it suitable for inductive load switching (e.g., motor drives, solenoids) where voltage spikes exceed V_DSS, provided energy per event stays within the rated limit and channel temperature remains ≤150 °C.

What is the thermal resistance from channel to case for TK46E08N1,S1X?

The channel-to-case thermal resistance (R_th(ch-c)) of TK46E08N1,S1X is 1.21 °C/W maximum. This value is measured with the device mounted on a heatsink per JEDEC standards and is critical for calculating junction temperature rise under power dissipation - for example, 50 W loss yields ~60.5 °C rise above case temperature.

Can TK46E08N1,S1X be used as a synchronous rectifier in a 48 V to 12 V buck converter?

Yes - TK46E08N1,S1X is well-suited as a synchronous rectifier in 48 V input buck converters due to its 80 V V_DSS (providing margin over reflected voltage spikes), low 6.9 mΩ R_DS(ON), and fast 11 ns rise time. Its body diode t_rr = 59 ns also supports efficient dead-time management without excessive reverse recovery loss.

TK46E08N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK46E08N1,S1X FAQ

1.How can I place an order for TK46E08N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK46E08N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK46E08N1,S1X reliable?

The price and inventory of TK46E08N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK46E08N1,S1X is usually 5 days.

3.What payment methods are accepted for TK46E08N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK46E08N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK46E08N1,S1X?

TK46E08N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK46E08N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK46E08N1,S1X?

For technical support, including TK46E08N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK46E08N1,S1X requirements.

6.How does Aetrix verify that TK46E08N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK46E08N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK46E08N1,S1X meets industry standards.

7.What is the process for return or replacement of TK46E08N1,S1X?

All TK46E08N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK46E08N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK46E08N1,S1X part is unused and in its original packaging.

Return procedure for TK46E08N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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