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Toshiba Semiconductor and Storage TK8A25DA,S4X
- Part No.:
- TK8A25DA,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK8A25DA,S4X.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR TO-
- Quantity:
- Payment:
- Shipping:
Inventory:32
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Product details
Overview
TK8A25DA,S4X from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-efficiency switching in DC-DC converters and offline SMPS. It delivers 7.5 A continuous drain current at 25 °C, features 250 V drain-source breakdown voltage, 0.41 Ω typical RDS(ON), and operates in enhancement mode with 1.5–3.5 V gate threshold.
For engineers reviewing the TK8A25DA,S4X datasheet, TK8A25DA,S4X pinout, TK8A25DA,S4X application, or TK8A25DA,S4X equivalent, this device is selected for medium-power switching regulators where low conduction loss, avalanche ruggedness (45 mJ), and TO-220SIS thermal performance are critical design requirements.
Technical Context
This MOSFET employs a planar vertical structure optimized for fast switching and low gate charge (16 nC total). Its dynamic characteristics include 550 pF input capacitance and 28 ns rise time under standard test conditions (VDD ≈ 200 V, ID = 7.5 A), supporting operation up to several hundred kHz in hard-switched topologies.
The device integrates an intrinsic body diode with 150 ns reverse recovery time and 0.8 µC reverse recovery charge, enabling synchronous rectification support in flyback and forward converters. Thermal resistance from channel-to-case is 4.16 °C/W, confirming suitability for heatsink-mounted applications with controlled Tch ≤ 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V AC-input offline SMPS designs. |
| RDS(ON) | 0.41 Ω (typ.) - Minimizes conduction loss at 3.8 A, reducing I²R heating in continuous conduction mode. |
| ID (DC) | 7.5 A - Supports sustained output currents up to 7.5 A at Tc = 25 °C with appropriate heatsinking. |
| EAS | 45 mJ - Rated single-pulse avalanche energy enables robustness against inductive switching transients without external snubbers. |
| Vth | 1.5–3.5 V - Compatible with standard 3.3 V/5 V logic-level gate drivers; ensures reliable turn-on with margin above 2.5 V. |
| Ciss | 550 pF - Defines gate drive power requirement and influences switching speed in conjunction with gate resistance. |
| Qg | 16 nC - Determines total gate charge needed per switching cycle, directly impacting driver sizing and switching loss. |
Pinout & Package
TK8A25DA,S4X is housed in a TO-220SIS (JEITA SC-67) package with insulated tab, enabling direct mounting to heatsinks without electrical isolation hardware. The package weighs 1.7 g and provides 2000 VRMS isolation between drain and mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate (G) | Control terminal | Receives voltage signal to modulate channel conductivity; requires ESD-safe handling due to ±1 µA leakage limit. |
| 2: Drain (D) | High-side power terminal | Connected to input rail or inductive load; electrically tied to metal tab and heatsink mounting surface. |
| 3: Source (S) | Return path / reference node | Serves as common return for gate drive and load current; defines local ground reference for control circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 0.41 Ω typ. reduces conduction losses by >30% vs. comparable 250 V MOSFETs, improving efficiency in 5–20 W adapters. |
| Avalanche-rated | 45 mJ single-pulse rating allows safe operation under inductive switching stress without derating or snubber circuits. |
| Logic-level compatible | Vth range (1.5–3.5 V) ensures full enhancement with 3.3 V microcontroller GPIO or dedicated low-voltage gate drivers. |
| Body diode with fast recovery | 150 ns trr and 11 A peak Irr enable use in quasi-resonant flyback and active clamp topologies without external diodes. |
| Thermally optimized package | 4.16 °C/W Rth(ch-c) supports 30 W dissipation with modest heatsinking, simplifying thermal design in space-constrained enclosures. |
Applications
| AC-DC Adapters | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: 12 V/5 A offline adapter for industrial instrumentation with universal AC input (85–264 VAC). IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter. Use Value: Low RDS(ON) and 250 V rating ensure >85% efficiency at full load while maintaining safety margin across line variations. |
Use Scenario: 24 V input to 5 V/3 A isolated DC-DC module for PLC I/O modules operating in harsh environments. IC Role / Device Role / Timing Role: Main switch in forward converter topology with active clamp reset. Use Value: Avalanche ruggedness and 7.5 A ID rating allow reliable operation during transient overloads and short-circuit events. |
| LED Driver Power Stages | Motor Control H-Bridge Legs |
|
Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300 V bus. IC Role / Device Role / Timing Role: High-side switch controlling inductor current in high-frequency PWM dimming stage. Use Value: Fast 28 ns rise time and low Qg minimize switching loss at 200 kHz, preserving thermal headroom for outdoor ambient temperatures. |
Use Scenario: Low-side switch in 24 V brushed DC motor driver for HVAC actuators requiring bidirectional control. IC Role / Device Role / Timing Role: One quadrant of half-bridge driving motor winding with PWM frequency up to 50 kHz. Use Value: 0.41 Ω RDS(ON) limits I²R loss to <1.2 W at 5 A stall current, avoiding thermal shutdown during startup surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK25Z | 250 V, 8 A, RDS(ON) = 0.45 Ω (typ.), Zener-protected gate, TO-220FP package (non-isolated tab) | Requires insulating washer for heatsink mounting; slightly higher RDS(ON) increases conduction loss by ~10% at 3.8 A. | Preferred when gate protection against overvoltage transients is prioritized over thermal interface simplicity. |
| IRFIBS30GPBF | 250 V, 7.5 A, RDS(ON) = 0.44 Ω (typ.), standard TO-220, no isolation rating | Lacks 2000 VRMS isolation; mandates dielectric pad or sil-pad for heatsink mounting, increasing thermal resistance by ~1.2 °C/W. | Selected when cost sensitivity outweighs thermal performance and mechanical integration benefits of insulated tab. |
Compared with STP8NK25Z and IRFIBS30GPBF, TK8A25DA,S4X offers superior thermal interface via its TO-220SIS insulated tab, lower RDS(ON), and guaranteed avalanche energy-making it optimal for compact, high-reliability power supplies where heatsink integration and transient robustness are critical.
Availability
TK8A25DA,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for TK8A25DA,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.
TK8A25DA,S4X belongs to Toshiba's π-MOSⅣ power MOSFET product line, engineered specifically for high-efficiency, medium-power switching applications in industrial power supplies and lighting systems.
FAQ
What is the maximum continuous drain current rating for TK8A25DA,S4X?
The TK8A25DA,S4X is rated for 7.5 A DC drain current at case temperature (Tc) = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C. At elevated case temperatures, the current must be derated per the SOA curve in Figure 8.14 of the datasheet. For sustained 7.5 A operation, a heatsink capable of holding Tc ≤ 65 °C is recommended.
Does TK8A25DA,S4X have avalanche capability, and how is it specified?
Yes, TK8A25DA,S4X is fully rated for single-pulse avalanche energy at 45 mJ (EAS) with Tch = 25 °C, tested under defined conditions (VDD = 50 V, L = 1.33 mH, RG = 25 Ω, IAR = 7.5 A). This specification confirms ruggedness against inductive switching stresses without external protection, making TK8A25DA,S4X suitable for flyback and forward converters with unclamped inductive loads.
What is the gate threshold voltage range for TK8A25DA,S4X, and how does it affect drive compatibility?
The gate threshold voltage (Vth) for TK8A25DA,S4X is specified from 1.5 V to 3.5 V at VDS = 10 V and ID = 1 mA. This logic-level range ensures reliable turn-on with 3.3 V or 5 V gate drivers, including microcontroller GPIOs and dedicated low-voltage drivers. The upper limit guarantees immunity to noise-induced false turn-on, while the lower limit supports efficient operation in low-voltage control architectures.
Is TK8A25DA,S4X RoHS compliant, and what marking indicates compliance?
Yes, TK8A25DA,S4X is RoHS compliant. Per Toshiba's marking convention, an underlined lot number on the device body indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. Non-underlined markings denote lead-containing versions. All units supplied by Aetrix Electronics are RoHS-compliant and conform to Directive 2011/65/EU; full compliance documentation is available upon request.
How does the TO-220SIS package of TK8A25DA,S4X differ from standard TO-220 in thermal and mounting terms?
The TO-220SIS package of TK8A25DA,S4X features an electrically insulated metal tab rated for 2000 VRMS isolation, allowing direct mounting to grounded heatsinks without insulating hardware. This eliminates thermal interface resistance from mica washers or sil-pads, improving thermal resistance from channel-to-case to 4.16 °C/W-approximately 15–20% better than standard TO-220 variants with added isolation layers.
TK8A25DA,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK8A25DA,S4X FAQ
1.How can I place an order for TK8A25DA,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK8A25DA,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK8A25DA,S4X reliable?
The price and inventory of TK8A25DA,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8A25DA,S4X is usually 5 days.
3.What payment methods are accepted for TK8A25DA,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8A25DA,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK8A25DA,S4X?
TK8A25DA,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK8A25DA,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK8A25DA,S4X?
For technical support, including TK8A25DA,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8A25DA,S4X requirements.
6.How does Aetrix verify that TK8A25DA,S4X is sourced from the original manufacturer or authorized distributors?
All TK8A25DA,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8A25DA,S4X meets industry standards.
7.What is the process for return or replacement of TK8A25DA,S4X?
All TK8A25DA,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK8A25DA,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK8A25DA,S4X part is unused and in its original packaging.
Return procedure for TK8A25DA,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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