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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3A65D(STA4,Q,M)

Name: TK3A65D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK3A65D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3A65D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK3A65D(STA4,Q,M).pdf

Description:: MOSFET N-CH 650V 3A TO220SIS

Quantity:: RFQ Add To RFQ list

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Inventory:26

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Product details

Overview

TK3A65D(STA4,Q,M) from Toshiba Electronics is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and DC-DC regulators. It delivers 650 V V_DSS, 3 A continuous drain current (I_D), and low R_DS(ON) of 1.93 Ω (typ.) at V_GS = 10 V, enabling efficient operation in flyback and forward topologies up to 100 kHz.

For engineers reviewing the TK3A65D(STA4,Q,M) datasheet, TK3A65D(STA4,Q,M) pinout, TK3A65D(STA4,Q,M) application, or TK3A65D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 234 mJ), gate threshold voltage range (2.4–4.4 V), thermal resistance (R_th(ch-c) = 3.57 °C/W), and TO-220SIS package compatibility with standard heatsinking footprints.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage blocking and fast switching in hard-switched SMPS. Its enhancement-mode operation requires positive gate drive only, with |Y_fs| = 2.2 S (typ.) ensuring strong transconductance for stable current control under varying load conditions.

The device integrates an intrinsic body diode with t_rr = 1000 ns and Q_rr = 5.5 µC (typ.), supporting quasi-resonant and discontinuous conduction mode (DCM) designs. Avalanche-rated for single-pulse energy up to 234 mJ at T_ch = 25 °C, it sustains transient overvoltage events without external snubbers in properly derated applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands full rectified mains voltage (e.g., 400 V DC bus + margin) in universal-input offline converters
R_DS(ON)	1.93 Ω (typ.) - Limits conduction loss to ≤8.7 W at I_D = 3 A, enabling thermally manageable operation on small heatsinks
I_D (DC)	3 A - Supports output power up to ~75 W in 65–100 kHz flyback designs with adequate thermal design
E_AS	234 mJ - Enables robust single-pulse avalanche capability without external clamping in transformer leakage energy absorption
Q_g	11 nC (typ.) - Determines gate drive power requirement (~110 µW per MHz of switching frequency at 10 V drive)
t_r/t_f	18 ns / 8 ns - Supports fast turn-on/turn-off transitions, reducing switching loss in high-frequency SMPS
R_th(ch-c)	3.57 °C/W - Allows junction temperature rise of ≤10.7 °C above case at 3 A conduction, simplifying thermal interface design

Pinout & Package

TK3A65D(STA4,Q,M) is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a surface-mount compatible variant of TO-220 with isolated drain tab, enabling direct PCB mounting without insulating hardware while maintaining creepage/clearance for 650 V systems.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate (G)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires <2.4–4.4 V threshold to initiate conduction
2: Drain (D)	High-side power terminal	Connected to primary winding or high-voltage rail; electrically isolated from package tab for safe heatsink mounting
3: Source (S)	Reference node	Serves as return path for load current and gate drive reference; tied to power ground in common-source configurations

Key Features

Feature	Design Value
Low R_DS(ON)	1.93 Ω typ. reduces I²R conduction loss by >30% vs. legacy 650 V MOSFETs with R_DS(ON) > 2.5 Ω at same current
High \|Y_fs\|	2.2 S typ. provides tight gate-to-drain current control, improving regulation stability in current-mode controllers
Avalanche-rated	234 mJ single-pulse E_AS eliminates need for external RCD snubber in most flyback designs, lowering BOM count
Enhancement-mode V_th	2.4–4.4 V range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental activation from noise
Body diode Q_rr	5.5 µC enables predictable reverse recovery behavior in DCM operation, minimizing voltage overshoot during freewheeling

Applications

AC-DC Flyback Converter	Industrial DC-DC Isolated Supply
Use Scenario: Universal-input (85–265 V_AC) offline adapter delivering 12 V/3 A to industrial sensors. IC Role / Device Role / Timing Role: Primary-side power switch operating in DCM at 65 kHz, driven by UC3842 controller. Use Value: Low R_DS(ON) and avalanche rating allow compact heatsink and eliminate snubber components, reducing footprint by 18%.	Use Scenario: 48 V input to 5 V/2 A isolated supply for PLC I/O modules in factory automation. IC Role / Device Role / Timing Role: High-side switch in forward converter topology, synchronized to 100 kHz PWM controller. Use Value: 650 V rating accommodates 48 V bus transients up to 150 V, eliminating need for additional overvoltage protection.
LED Driver (Non-isolated Buck-PFC)	UPS Inverter Stage
Use Scenario: 230 V_AC input LED driver with active PFC and constant-current buck stage for street lighting. IC Role / Device Role / Timing Role: Switching element in boost PFC pre-regulator, operating in CCM at 50 kHz. Use Value: High \|Y_fs\| ensures linear current sensing response across line cycle, improving THD to <10%.	Use Scenario: 12 V battery-backed 230 V_AC inverter for telecom backup systems with 300 W output. IC Role / Device Role / Timing Role: Half-bridge high-side switch in push-pull inverter, gated by IR2110 driver. Use Value: TO-220SIS isolation allows direct heatsink mounting without mica washers, reducing thermal resistance by 1.2 °C/W.

AC-DC Flyback Converter

Industrial DC-DC Isolated Supply

Use Scenario: Universal-input (85–265 V_AC) offline adapter delivering 12 V/3 A to industrial sensors.

IC Role / Device Role / Timing Role: Primary-side power switch operating in DCM at 65 kHz, driven by UC3842 controller.

Use Value: Low R_DS(ON) and avalanche rating allow compact heatsink and eliminate snubber components, reducing footprint by 18%.

Use Scenario: 48 V input to 5 V/2 A isolated supply for PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: High-side switch in forward converter topology, synchronized to 100 kHz PWM controller.

Use Value: 650 V rating accommodates 48 V bus transients up to 150 V, eliminating need for additional overvoltage protection.

LED Driver (Non-isolated Buck-PFC)

UPS Inverter Stage

Use Scenario: 230 V_AC input LED driver with active PFC and constant-current buck stage for street lighting.

IC Role / Device Role / Timing Role: Switching element in boost PFC pre-regulator, operating in CCM at 50 kHz.

Use Value: High |Y_fs| ensures linear current sensing response across line cycle, improving THD to <10%.

Use Scenario: 12 V battery-backed 230 V_AC inverter for telecom backup systems with 300 W output.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in push-pull inverter, gated by IR2110 driver.

Use Value: TO-220SIS isolation allows direct heatsink mounting without mica washers, reducing thermal resistance by 1.2 °C/W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V V_DSS, R_DS(ON) = 2.4 Ω (typ.), no guaranteed E_AS rating	Limited to lower-input-voltage applications (<265 V_AC); unsuitable for 380 V DC bus surge conditions	Choose when cost sensitivity outweighs avalanche robustness and 650 V margin is unnecessary
FQP3N60C	600 V V_DSS, R_DS(ON) = 2.2 Ω (typ.), Q_g = 14 nC - higher gate charge increases drive loss	Requires stronger gate driver due to higher Q_g; less suitable for space-constrained layouts with limited gate drive headroom	Prefer where existing designs use FQP3N60C and only minor derating is acceptable for 650 V operation

Compared with STP3NK60ZFP and FQP3N60C, TK3A65D(STA4,Q,M) offers superior voltage margin, lower conduction loss, and verified avalanche ruggedness - making it the preferred choice for new 650 V designs requiring long-term reliability in unregulated line environments.

Availability

TK3A65D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial DC-DC isolated supplies, and non-isolated LED drivers requiring stable component supply and long-lifecycle support.

Supply support for TK3A65D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET development expertise.

TK3A65D(STA4,Q,M) belongs to Toshiba's π-MOSⅣ high-voltage MOSFET product line, engineered specifically for energy-efficient, compact, and reliable switching power supplies in industrial and consumer applications.

FAQ

What is the maximum continuous drain current for TK3A65D(STA4,Q,M) at 100°C case temperature?

The TK3A65D(STA4,Q,M) supports 3 A continuous drain current (I_D) at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.14): maximum I_D drops to approximately 1.8 A to maintain T_ch ≤ 150 °C. This reflects thermal limitation-not electrical failure-and must be validated with actual board-level thermal resistance.

Does TK3A65D(STA4,Q,M) have a fully rated avalanche capability, and how is it tested?

Yes, TK3A65D(STA4,Q,M) is fully specified for single-pulse avalanche energy (E_AS) at 234 mJ (T_ch = 25 °C, V_DD = 90 V, L = 46 mH, R_G = 25 Ω, I_AR = 3 A). This rating is production-tested per JEDEC JESD24-11 and guarantees survivability under defined inductive switching stress-critical for flyback transformer leakage energy absorption without snubbers.

What is the gate threshold voltage range for TK3A65D(STA4,Q,M), and why does it matter for gate drive design?

The gate threshold voltage (V_th) for TK3A65D(STA4,Q,M) is specified from 2.4 V to 4.4 V (V_DS = 10 V, I_D = 1 mA). This wide range ensures turn-on occurs reliably with standard 5 V logic-level drivers while avoiding false triggering from noise or ringing. Designers must ensure gate drive voltage exceeds 4.4 V for full enhancement and minimal R_DS(ON).

Can TK3A65D(STA4,Q,M) be used in synchronous rectification applications?

No - TK3A65D(STA4,Q,M) is not optimized for synchronous rectification. Its body diode has t_rr = 1000 ns and Q_rr = 5.5 µC, which causes significant reverse recovery loss in high-frequency secondary-side switching. Synchronous rectifier MOSFETs require ultra-low Q_rr (<100 nC) and fast t_rr (<100 ns), features not specified for TK3A65D(STA4,Q,M).

Is TK3A65D(STA4,Q,M) RoHS compliant, and what marking indicates compliance?

Yes, TK3A65D(STA4,Q,M) is RoHS compliant. Per Toshiba's marking note (Fig. 7.1), RoHS-compliant units feature an underlined lot number with [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-underlined markings indicate lead-containing versions. Always verify compliance via the date code and packaging label per your TOSHIBA sales representative's guidance.

TK3A65D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.25Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK3A65D(STA4,Q,M) FAQ

1.How can I place an order for TK3A65D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3A65D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3A65D(STA4,Q,M) reliable?

The price and inventory of TK3A65D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3A65D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK3A65D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3A65D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3A65D(STA4,Q,M)?

TK3A65D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3A65D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3A65D(STA4,Q,M)?

For technical support, including TK3A65D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3A65D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK3A65D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK3A65D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3A65D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK3A65D(STA4,Q,M)?

All TK3A65D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK3A65D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3A65D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK3A65D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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