Toshiba Semiconductor and Storage TK8A45D(STA4,Q,M)
- Part No.:
- TK8A45D(STA4,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK8A45D(STA4,Q,M).pdf
- Description:
- MOSFET N-CH 450V 8A TO220SIS
- Quantity:
- Payment:

- Shipping:

Inventory:50
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Product details
Overview
TK8A45D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching applications. It delivers 450 V drain-source breakdown voltage, 8 A DC drain current, and low on-resistance of 0.73 Ω (typ.) at VGS = 10 V, enabling efficient operation in offline SMPS and industrial power supplies.
For engineers reviewing the TK8A45D(STA4,Q,M) datasheet, TK8A45D(STA4,Q,M) pinout, TK8A45D(STA4,Q,M) application, or TK8A45D(STA4,Q,M) equivalent, key selection criteria include avalanche energy rating (173 mJ), gate threshold voltage range (2.4–4.4 V), thermal resistance (3.57 °C/W channel-to-case), and TO-220SIS package compatibility with heatsink mounting.
Technical Context
This device operates in enhancement mode with a gate threshold voltage specified between 2.4 V and 4.4 V at VDS = 10 V and ID = 1 mA, ensuring reliable turn-on under standard logic-level drive. Its low RDS(ON) and high forward transfer admittance (|Yfs| = 3.8 S typ.) support fast switching and high-current conduction in hard-switched topologies.
The TK8A45D(STA4,Q,M) features built-in body diode with reverse recovery time of 1300 ns and Qrr of 9.1 µC, making it suitable for freewheeling paths in flyback and forward converters. Its single-pulse avalanche capability (EAS = 173 mJ) provides robustness against transient overvoltage events without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - supports primary-side switching in universal-input AC/DC adapters up to 265 VAC |
| RDS(ON) | 0.73 Ω (typ.) - reduces conduction loss and junction heating at 4 A load current |
| ID (DC) | 8 A - enables continuous operation in 60–100 W power supplies with adequate heatsinking |
| EAS | 173 mJ - withstands single-energy avalanche events during MOSFET turn-off transients |
| Vth | 2.4–4.4 V - compatible with 5 V and 12 V gate drivers; avoids spurious turn-on near ground |
| Ciss | 700 pF - determines gate drive power requirement and influences switching speed |
| Rth(ch-c) | 3.57 °C/W - allows thermal design with standard TO-220 heatsinks for ≤35 W dissipation |
Pinout & Package
TK8A45D(STA4,Q,M) is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with insulated tab, enabling direct mounting to heatsinks without electrical isolation hardware. The package weighs 1.7 g and features three leads in a single-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Controls channel conduction; requires <2.4 V to ensure full off-state and >4.4 V for guaranteed saturation |
| 2 | Drain (D) | High-voltage terminal connected to transformer primary or bus rail; electrically tied to metal tab |
| 3 | Source (S) | Return path for load current; referenced to control circuit ground; defines VGS measurement point |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 0.73 Ω typ. minimizes I²R losses in high-duty-cycle SMPS designs, improving efficiency by ~0.8% at full load |
| High |Yfs| | 3.8 S typ. enables strong transconductance for stable gain in current-sense amplifier interfaces |
| Avalanche-rated | 173 mJ single-pulse rating permits operation without clamping circuits in non-isolated flyback converters |
| Enhancement-mode Vth | 2.4–4.4 V range ensures compatibility with both 3.3 V and 5 V microcontroller gate drivers |
| TO-220SIS insulation | Electrically isolated metal tab eliminates need for insulating washers when mounted to grounded heatsinks |
Applications
| Industrial AC/DC Power Supplies | LED Driver Circuits |
|---|---|
Use Scenario: 75 W open-frame power supply for factory automation controllers operating from 85–265 VAC. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in discontinuous conduction mode (DCM) flyback topology. Use Value: 450 V VDSS and 173 mJ EAS eliminate need for external RCD snubber, reducing BOM count and board area. | Use Scenario: Constant-current LED driver for high-bay lighting fixtures with surge immunity requirements. IC Role / Device Role / Timing Role: High-side switch controlling bulk capacitor discharge and LED string current regulation. Use Value: Low leakage (IDSS ≤ 10 µA at 450 V) prevents standby power drift and maintains dimming stability over temperature. |
| Switching Voltage Regulators | Motor Drive Inverters |
Use Scenario: 48 V input buck converter supplying 12 V/5 A to embedded control modules in telecom infrastructure. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side synchronous rectification stage. Use Value: 0.73 Ω RDS(ON) reduces conduction loss by 35% compared to 1.2 Ω alternatives, lowering thermal stress on PCB copper. | Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element handling PWM commutation at 20 kHz. Use Value: Fast reverse recovery (trr = 1300 ns) and low Qrr (9.1 µC) suppress shoot-through risk and reduce switching losses during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK45Z | 450 V VDSS, 7.5 A ID, RDS(ON) = 0.85 Ω, Zener-protected gate | Higher RDS(ON) increases conduction loss; integrated gate protection simplifies layout | Prefer when gate drive reliability in noisy environments outweighs efficiency targets |
| IRF740B | 400 V VDSS, 10 A ID, RDS(ON) = 0.55 Ω, TO-220AB package (non-insulated) | Lower voltage rating limits use to 230 VAC max inputs; uninsulated tab requires isolation hardware | Choose only if system input is strictly ≤230 VAC and heatsink isolation is already implemented |
Compared with STP8NK45Z and IRF740B, the TK8A45D(STA4,Q,M) offers superior avalanche ruggedness (173 mJ vs. 120 mJ and 85 mJ), TO-220SIS insulation eliminating mounting complexity, and tighter Vth distribution-making it optimal for cost-sensitive, high-reliability industrial SMPS where layout simplicity and transient robustness are prioritized.
Availability
TK8A45D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, LED driver circuits, and switching voltage regulators requiring stable component supply across multi-year production cycles.
Supply support for TK8A45D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.
The TK8A45D(STA4,Q,M) belongs to Toshiba's π-MOSⅣ high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power conversion systems up to 100 W.
FAQ
What is the maximum continuous drain current rating for TK8A45D(STA4,Q,M)?
The TK8A45D(STA4,Q,M) has a DC drain current rating of 8 A at Tc = 25 °C. This value decreases with increasing case temperature per the derating curve in Figure 8.11; at 100 °C case temperature, the usable ID drops to approximately 4.5 A. Thermal design must ensure channel temperature remains below 150 °C under worst-case load conditions.
Does TK8A45D(STA4,Q,M) have an integrated body diode, and what are its key parameters?
Yes, the TK8A45D(STA4,Q,M) includes a monolithic body diode. Its key parameters include reverse recovery time (trr) of 1300 ns and reverse recovery charge (Qrr) of 9.1 µC, measured at IDR = 8 A, VGS = 0 V, and -dIDR/dt = 100 A/µs. These values impact switching loss and EMI in hard-switched topologies.
What is the gate threshold voltage range for TK8A45D(STA4,Q,M), and how does it affect drive circuit design?
The gate threshold voltage (Vth) for TK8A45D(STA4,Q,M) is specified from 2.4 V to 4.4 V at VDS = 10 V and ID = 1 mA. This range means a 5 V gate driver ensures full enhancement, while 3.3 V may yield marginal conduction. Designers should verify gate drive voltage margin above 4.4 V to guarantee low RDS(ON) across process and temperature variation.
Is TK8A45D(STA4,Q,M) RoHS compliant, and what marking indicates compliance?
Yes, TK8A45D(STA4,Q,M) is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions show unmarked or [[Pb]]/INCLUDES > MCV indicators. Always verify marking on received units or consult Toshiba's latest environmental reports.
What thermal resistance values apply to TK8A45D(STA4,Q,M), and how are they used in thermal design?
The TK8A45D(STA4,Q,M) specifies Rth(ch-c) = 3.57 °C/W (channel-to-case) and Rth(ch-a) = 62.5 °C/W (channel-to-ambient). Rth(ch-c) is used with heatsink thermal resistance to calculate junction temperature rise above case; Rth(ch-a) applies only in free-air conditions without heatsink and is rarely used in production designs due to its high value.
TK8A45D(STA4,Q,M) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 450 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 900mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK8A45D(STA4,Q,M) FAQ
1.How can I place an order for TK8A45D(STA4,Q,M) through Aetrix?
Please submit a Request for Quotation (RFQ) for TK8A45D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK8A45D(STA4,Q,M) reliable?
The price and inventory of TK8A45D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8A45D(STA4,Q,M) is usually 5 days.
3.What payment methods are accepted for TK8A45D(STA4,Q,M)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8A45D(STA4,Q,M) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK8A45D(STA4,Q,M)?
TK8A45D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK8A45D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK8A45D(STA4,Q,M)?
For technical support, including TK8A45D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8A45D(STA4,Q,M) requirements.
6.How does Aetrix verify that TK8A45D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?
All TK8A45D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8A45D(STA4,Q,M) meets industry standards.
7.What is the process for return or replacement of TK8A45D(STA4,Q,M)?
All TK8A45D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK8A45D(STA4,Q,M), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK8A45D(STA4,Q,M) part is unused and in its original packaging.
Return procedure for TK8A45D(STA4,Q,M):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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