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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AIMCQ120R030M1TXTMA1 SIC_DISCRETE Infineon Technologies	63	RFQ	-	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	78A (Tc)	18V, 20V	38mOhm @ 27A, 20V	5.1V @ 8.6mA	57 nC @ 20 V	+25V, -10V	1738 pF @ 800 V	-	417W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
TM3B0039120A SIC MOSFET Coherent Corp	90	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	60A	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4
MSC040SMA120B4N MOSFET SIC 1200 V 40 MOHM TO-247 Microchip Technology	60	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	71A (Tc)	18V, 20V	50mOhm @ 40A, 20V	5V @ 2mA	137 nC @ 20 V	+23V, -10V	1962 pF @ 1000 V	-	372W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
TW027Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 27 Toshiba Semiconductor and Storage	80	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	38mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
TW060Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 6 Toshiba Semiconductor and Storage	88	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	82mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
SCT040W120G3AG HIP-247 IN LINE HEAT SINK 2MM STMicroelectronics	100	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V, 18V	54mOhm @ 16A, 18V	4.2V @ 5mA	56 nC @ 18 V	+22V, -10V	1329 pF @ 800 V	-	312W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
DMWS120H100SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	27	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37.2A (Tc)	15V	100mOhm @ 20A, 15V	3.5V @ 5mA	52 nC @ 15 V	+19V, -8V	1516 pF @ 1000 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
STW65N023M9-4 N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics	59	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	95A (Tc)	10V	23mOhm @ 48A, 10V	4.2V @ 250µA	230 nC @ 10 V	±30V	8844 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
S2M0025120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	46	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	70A (Tj)	20V	34mOhm @ 50A, 20V	4V @ 15mA	177 nC @ 20 V	+25V, -10V	4150 pF @ 1000 V	-	311W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
SCT025H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	85	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT018H65G3AG H2PAK-7 STMicroelectronics	100	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	79.4 nC @ 18 V	+22V, -10V	2124 pF @ 400 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
S2M0080120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT018W65G3-4AG TO247-4 STMicroelectronics	100	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	77 nC @ 18 V	+22V, -10V	2077 pF @ 400 V	-	398W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
SCT025W120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT025W120G3-4AG TO247-4 STMicroelectronics	75	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	37mOhm @ 25A, 18V	4.2V @ 5mA	73 nC @ 18 V	+18V, -5V	1990 pF @ 800 V	-	388W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
MSC015SMA070B4N MOSFET SIC 700 V 15 MOHM TO-247- Microchip Technology	60	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	700 V	112A (Tc)	18V, 20V	19mOhm @ 40A, 20V	5V @ 4mA	215 nC @ 20 V	+23V, -10V	4324 pF @ 700 V	-	524W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT012W90G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	RFQ	-	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0040120N-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT011HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	50	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC017SMA120B4N MOSFET SIC 1200 V 17 MOHM TO-247 Microchip Technology	30	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	119A (Tc)	18V, 20V	22mOhm @ 40A, 20V	5V @ 4.5mA	194 nC @ 20 V	+23V, -10V	4274 pF @ 1200 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4

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