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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT025W120G3AG

Name: SCT025W120G3AG
Brand: STMicroelectronics
SKU: SCT025W120G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT025W120G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT025W120G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT025W120G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET designed for high-voltage, high-efficiency traction inverters and on-board chargers in electric vehicles. It delivers 1200 V drain-source voltage rating, 27 mΩ typical R_DS(on) at 18 V V_GS and 25 A, 56 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, thermally robust EV power stages.

For engineers reviewing the SCT025W120G3AG datasheet, SCT025W120G3AG pinout, SCT025W120G3AG application, or SCT025W120G3AG equivalent, key selection criteria include its low-temperature-stable R_DS(on), fast switching energy (E_on = 389 µJ, E_off = 125 µJ @ 800 V), robust body diode (t_rr = 20 ns), and HiP247 package thermal resistance (R_thJC = 0.45 °C/W).

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology to achieve stable on-resistance across -55 °C to 200 °C, with minimal R_DS(on) drift (typ. 53 mΩ at T_J = 200 °C) and low output capacitance (C_oss = 102 pF @ 800 V). Its gate threshold voltage (V_GS(th) = 1.8–4.2 V) and wide gate drive range (-5 V to +18 V) support robust gate control in noisy automotive environments.

The device integrates a fast, soft-recovery intrinsic SiC body diode (Q_rr = 135 nC, I_RRM = 11.8 A) and exhibits low dynamic losses: C_iss = 1990 pF, Q_g = 73 nC, and t_d(off) = 29.5 ns - enabling high-frequency operation (>100 kHz) in DC/DC converters and traction inverters without excessive gate drive power.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC bus systems with >50 % voltage margin for transient overvoltage in EV traction applications.
R_DS(on) typ.	27 mΩ @ V_GS = 18 V, I_D = 25 A, T_J = 25 °C - enables <1.5 W conduction loss at 56 A, reducing heatsink size.
I_D cont.	56 A @ T_C = 25 °C - rated for continuous operation in main inverter legs under forced-air cooling.
E_on/E_off	389 µJ / 125 µJ @ V_DD = 800 V, I_D = 25 A, R_G = 4.7 Ω - allows >50 kHz switching with <10 W switching loss per device in 3-phase inverter leg.
T_J max	200 °C - permits sustained operation in high-ambient under-hood environments without derating.
t_rr	20 ns @ I_SD = 25 A, di/dt = 1000 A/µs - minimizes commutation loss and dv/dt-induced shoot-through risk in hard-switched topologies.
R_thJC	0.45 °C/W - enables direct mounting to cold plates with <10 K/W total thermal path to ambient for 300 W dissipation.

Pinout & Package

Package: HiP247 - industrial-grade, isolated-tab TO-247 variant with enhanced creepage/clearance and optimized thermal path via copper tab (D, pin 2/TAB); suitable for high-voltage isolation and high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2, TAB)	Drain terminal / thermal interface	Electrically active high-side node; copper tab provides primary heat conduction path to heatsink - must be insulated from chassis if floating topology used.
G (Pin 1)	Gate control input	Low-impedance gate drive node requiring <4.7 Ω series resistance to damp ringing; compatible with standard 15 V SiC gate drivers.
S (Pin 3)	Source reference / return path	Common source node for gate drive return and current sensing; layout must minimize inductance to preserve switching fidelity and reduce V_GS overshoot.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use including temperature cycling, HTRB, and UIS stress - meets ISO 16750-4 requirements for EV traction systems.
Low R_DS(on) over full temperature range	R_DS(on) increases only ~96 % from 27 mΩ @ 25 °C to 53 mΩ @ 200 °C - maintains efficiency >98.5 % at full load across operating temperature envelope.
Fast intrinsic SiC body diode	t_rr = 20 ns, Q_rr = 135 nC - eliminates need for external anti-parallel SiC Schottky diodes in bidirectional DC/DC and OBC phase-leg designs.
High-speed switching performance	Q_gd/Q_gs ratio = 1.0, E_off/E_on ≈ 0.32 - enables balanced turn-on/turn-off loss distribution and reduced EMI generation in ZVS/ZCS circuits.
200 °C maximum junction temperature	Enables 2× power density vs. 150 °C-rated Si MOSFETs - reduces system volume by >30 % in liquid-cooled inverter modules.

Applications

Electric Traction Inverter

High-Voltage DC/DC Converter

Use Scenario: Three-phase motor drive in battery electric vehicle (BEV) powertrain, operating at 400–800 V DC bus and switching up to 16 kHz.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack inverter module; handles 56 A RMS phase current with <1.2 kW conduction loss per device.

Use Value: Enables >97 % inverter efficiency at 150 kW output while maintaining <105 °C case temperature under 60 °C ambient with direct cold-plate cooling.

Use Scenario: Isolated bi-directional DC/DC stage between 400 V traction battery and 12/48 V auxiliary systems in HEV/EV architecture.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology; operates at 100–200 kHz with zero-voltage switching.

Use Value: Reduces transformer size by 40 % vs. Si-based design due to lower E_sw and higher frequency capability, while eliminating external freewheeling diodes.

On-Board Charger (OBC)

Traction Motor Regenerative Braking

Use Scenario: AC/DC front-end and DC/DC isolation stage in 11 kW single-phase OBC for Level 2 charging.

IC Role / Device Role / Timing Role: PFC boost switch and isolated LLC resonant converter primary switch; handles 25 A peak current with 1200 V blocking.

Use Value: Achieves >96 % weighted efficiency across 10–100 % load, meeting DOE Level VI and EU CoC v5 standards without additional snubbers.

Use Scenario: Bidirectional energy recovery during deceleration in BEV, feeding regenerated power back to battery through inverter.

IC Role / Device Role / Timing Role: Reverse-conducting switch leveraging intrinsic SiC body diode during regen mode; conducts 56 A continuous in reverse direction.

Use Value: Eliminates need for discrete anti-parallel diodes, reducing BOM count by 2 devices per phase and improving reliability of regen path under high di/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0021120K	R_DS(on) = 21 mΩ @ 15 V, but V_GS(th) = 2.5–4.5 V; higher Q_g = 82 nC; no AEC-Q101 qualification.	Requires tighter gate drive voltage control; not approved for automotive safety-critical traction systems.	Select only for industrial DC/DC where automotive qualification is unnecessary and lower R_DS(on) justifies higher gate drive loss.
ROHM SCT3022KL	R_DS(on) = 22 mΩ @ 18 V, but T_J max = 175 °C; C_oss = 120 pF; AEC-Q101 qualified but rated only to 650 V.	Insufficient voltage rating for 800 V bus systems; unsuitable for main inverter or OBC primary side.	Consider only for 400 V DC/DC or auxiliary power supplies where voltage margin is adequate and thermal headroom is less constrained.

Compared with C3M0021120K and SCT3022KL, SCT025W120G3AG uniquely combines 1200 V rating, AEC-Q101 compliance, 200 °C operation, and low-temperature-stable R_DS(on) - making it the only validated option for production BEV main inverters requiring functional safety and extended thermal margin.

Availability

SCT025W120G3AG is available at Aetrix Electronics and suitable for electric traction inverters, high-voltage DC/DC converters, and on-board chargers requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for SCT025W120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's Automotive Power SiC portfolio, engineered specifically for high-reliability, high-efficiency electrified powertrain systems - emphasizing voltage robustness, thermal resilience, and functional safety compliance.

FAQ

What gate drive voltage is recommended for reliable operation?

The datasheet specifies recommended operating V_GS from -5 V to +18 V, with absolute maximum transient rating of -11 V to +25 V. For optimal R_DS(on) and switching speed, use +15 V turn-on and -5 V turn-off. Gate drive must limit dV/dt to avoid false triggering, especially given the device's low V_GS(th) (1.8–4.2 V) and high dv/dt immunity.

Is external gate resistor required, and what value is optimal?

Yes - a gate resistor is mandatory to control switching speed and suppress oscillation. The datasheet characterizes switching energy with R_G = 4.7 Ω. For most traction inverter designs, 4.7–10 Ω balances E_sw reduction and EMI control; values below 3.3 Ω increase E_off disproportionately and risk gate driver overstress.

How does the intrinsic body diode perform in hard-commutation?

The SiC body diode exhibits t_rr = 20 ns, Q_rr = 135 nC, and I_RRM = 11.8 A at 800 V - significantly faster and softer than Si counterparts. In hard-switched topologies, this enables efficient unidirectional freewheeling without oscillation or voltage overshoot, provided layout minimizes source inductance.

Can SCT025W120G3AG replace silicon IGBTs in existing 1200 V inverters?

Yes - with gate drive and layout adaptation. Its 1200 V rating and 56 A current match common 1200 V/50–75 A IGBT modules, but requires lower gate charge drive (73 nC vs. >300 nC for IGBTs), faster PCB routing, and attention to Miller capacitance effects. Thermal design benefits from lower R_thJC (0.45 °C/W vs. ~0.8 °C/W for IGBTs).

SCT025W120G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT025W120G3AG FAQ

1.How can I place an order for SCT025W120G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT025W120G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT025W120G3AG reliable?

The price and inventory of SCT025W120G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT025W120G3AG is usually 5 days.

3.What payment methods are accepted for SCT025W120G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT025W120G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT025W120G3AG?

SCT025W120G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT025W120G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT025W120G3AG?

For technical support, including SCT025W120G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT025W120G3AG requirements.

6.How does Aetrix verify that SCT025W120G3AG is sourced from the original manufacturer or authorized distributors?

All SCT025W120G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT025W120G3AG meets industry standards.

7.What is the process for return or replacement of SCT025W120G3AG?

All SCT025W120G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT025W120G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT025W120G3AG part is unused and in its original packaging.

Return procedure for SCT025W120G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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