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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT025W120G3-4AG

Name: SCT025W120G3-4AG
Brand: STMicroelectronics
SKU: SCT025W120G3-4AG
Price: 2.40 USD
Availability: InStock
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Part No.:: SCT025W120G3-4AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCT025W120G3-4AG.pdf

Description:: TO247-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT025W120G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency traction and charging systems. It delivers 1200 V drain-source voltage, 27 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, 56 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, high-frequency DC/DC converters in electric vehicle powertrains.

For engineers reviewing the SCT025W120G3-4AG datasheet, SCT025W120G3-4AG pinout, SCT025W120G3-4AG application, or SCT025W120G3-4AG equivalent, key selection criteria include its HiP247-4 package with source-sensing pin, low C_iss/C_oss capacitances (1990 pF / 102 pF), fast switching energy (E_on = 256 µJ, E_off = 161 µJ), and robust intrinsic SiC body diode (t_rr = 18 ns, Q_rr = 127 nC).

Technical Context

This 3rd-generation SiC MOSFET employs ST's trench-gate process to achieve stable R_DS(on) across -55 °C to 200 °C (normalized R_DS(on) ≈ 1.0× at 25 °C, ~2.3× at 200 °C) and low gate charge (Q_g = 73 nC, Q_gd = 23.5 nC) for minimal drive loss. Its 1200 V V_(BR)DSS maintains >94% of rated breakdown voltage up to 175 °C.

The device integrates a co-packaged, fast-recovery SiC body diode with 2.7 V forward voltage at I_SD = 25 A and zero reverse recovery tail current - eliminating external anti-parallel diodes in hard-switched topologies like three-phase inverters and bidirectional OBCs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC bus designs with ≥50% voltage margin for EV traction applications.
R_DS(on) typ.	27 mΩ at V_GS = 18 V, T_J = 25 °C - enables <1.5 W conduction loss at 56 A, critical for thermal management in confined power modules.
I_D cont.	56 A at T_C = 25 °C and 100 °C - sustained current capability independent of case temperature due to bonding-wire-limited rating.
E_on/E_off	256 µJ / 161 µJ at V_DD = 800 V, I_D = 25 A, R_G = 6.8 Ω - reduces total switching loss by >40% vs. comparable Si IGBTs at 20 kHz.
t_rr/Q_rr	18 ns / 127 nC - eliminates reverse recovery spikes, allowing snubberless operation and reducing EMI filter size in OBC PFC stages.
R_thJC	0.45 °C/W - enables direct heatsink mounting with ≤100 W junction-to-case thermal drop at full load, simplifying thermal interface design.
T_J max	200 °C - extends usable temperature headroom beyond standard 150 °C Si MOSFETs, supporting derating-free operation in under-hood environments.

Pinout & Package

Supplied in the HiP247-4 surface-mount-compatible through-hole package with isolated tab (Drain), optimized for high-current automotive power modules. The 4-pin layout includes dedicated Driver Source (pin 3) for Kelvin source sensing to eliminate gate-drive loop inductance effects during high-dI/dt switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (TAB)	Drain	High-current main power path; electrically connected to exposed metal tab for low-inductance, low-thermal-resistance heatsink attachment.
Pin 2	Power Source	Main source terminal carrying full load current; used for power return path in half-bridge configurations.
Pin 3	Driver Source	Kelvin sense connection for gate driver IC feedback - decouples gate-loop impedance from power loop, ensuring stable turn-on/turn-off timing.
Pin 4	Gate	Control input with ±100 nA leakage (V_GS = ±10 V); requires 73 nC total charge for full enhancement, compatible with standard 18 V gate drivers.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain use per stress test requirements including HTGB, HTRB, and TC2000 cycles - no screening waivers required for OEM deployment.
Source sensing pin (Kelvin source)	Enables precise gate control under high dI/dt (>5 kA/µs), eliminating false turn-on risk and reducing gate driver power dissipation by ~30%.
200 °C maximum junction temperature	Permits operation without derating in ambient temperatures up to 125 °C, reducing heatsink volume by ≥35% versus 150 °C-rated alternatives.
Robust intrinsic SiC body diode	18 ns t_rr, 11 A I_RRM, and soft recovery behavior eliminate need for external freewheeling diodes in bidirectional converters and reduce system BOM count.
Low capacitance profile	C_iss = 1990 pF, C_oss = 102 pF, C_rss = 12 pF - minimizes Miller effect, enabling reliable 100 kHz+ operation with standard gate drivers.

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: Isolated bidirectional DC/DC stage stepping 400 V battery to 12 V/48 V auxiliary supply in BEV platforms.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 27 mΩ R_DS(on) and 0.45 °C/W R_thJC enable >97.5% peak efficiency at 5 kW, reducing cooling requirements by 40% vs. Si-based solutions.

Use Scenario: Motor drive inverter converting battery DC to variable-frequency AC for permanent magnet synchronous motor (PMSM) in front/rear axle traction systems.

IC Role / Device Role / Timing Role: Switching element in 6-pack half-bridge module, handling 300–500 A peak phase current at 8–16 kHz PWM.

Use Value: 200 °C T_J rating and stable R_DS(on) allow full torque delivery at elevated under-hood temperatures without output derating.

On-Board Charger (OBC)

Traction Battery Precharge Circuit

Use Scenario: Totem-pole PFC and dual-active-bridge (DAB) isolation stages in 11–22 kW OBCs for Level 2 AC charging.

IC Role / Device Role / Timing Role: Fast-switching switch in interleaved totem-pole bridge, operating at 65–100 kHz with ZVS capability.

Use Value: Low Q_gd/Q_gs ratio (1.0) and 12 pF Crss support clean ZVS transition, cutting switching losses by 35% compared to Gen 2 SiC MOSFETs.

Use Scenario: Precharge FET controlling inrush current into high-capacitance traction battery packs during system startup.

IC Role / Device Role / Timing Role: Normally-open high-voltage switch placed between battery positive and inverter DC-link capacitor bank.

Use Value: 1200 V V_DS and 240 A pulsed ID_M withstand 1000 V transients and 500 A surge currents during contactor bounce, ensuring single-event reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021120K	R_DS(on) = 21 mΩ (lower), but no Kelvin source pin; Q_g = 82 nC (higher); T_J max = 175 °C.	Lacks driver source pin - requires external Kelvin routing, increasing PCB complexity and noise susceptibility in high-dI/dt inverters.	Prefer when lowest conduction loss dominates and gate drive layout allows discrete Kelvin trace implementation.
ROHM SCT3022KL	R_DS(on) = 22 mΩ, 1200 V rating, but only AEC-Q100 qualified; t_rr = 25 ns (slower); R_thJC = 0.55 °C/W.	Not AEC-Q101 qualified - unsuitable for safety-critical traction inverter use per ISO 26262 ASIL-B/C requirements.	Select only for non-safety-critical OBC or DC/DC where automotive qualification is not mandated.

Compared with C3M0021120K and SCT3022KL, SCT025W120G3-4AG uniquely combines AEC-Q101 compliance, integrated Kelvin source, and 200 °C operation - making it the only choice for production-grade traction inverters requiring zero-layout compromises and extended thermal margin.

Availability

SCT025W120G3-4AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, long-term automotive lifecycle support, and traceable manufacturing origin.

Supply support for SCT025W120G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with vertical manufacturing capabilities spanning wafer fabrication, packaging, and test - serving automotive, industrial, and power electronics markets since 1987.

This device belongs to ST's Automotive-Grade SiC Power MOSFET product line, engineered specifically for high-reliability, high-efficiency electrified powertrain systems where thermal resilience, switching speed, and functional safety compliance are non-negotiable.

FAQ

What gate drive voltage range is recommended for reliable operation?

The SCT025W120G3-4AG specifies a recommended gate-source voltage range of -5 V to +18 V, with absolute maximum ratings of -10 V to +22 V. A negative turn-off voltage (-5 V) is strongly advised to prevent spurious turn-on during high dV/dt commutation events in bridge configurations. Gate drive circuits must limit transient overshoot to ≤25 V for lifetime reliability.

How does the Kelvin source pin improve switching performance?

The dedicated Driver Source (pin 3) provides a low-inductance, low-noise reference for the gate driver IC, isolating the gate control loop from high di/dt power return paths. This eliminates voltage drop across source inductance during switching transitions, preventing gate oscillation and ensuring consistent V_GS waveform integrity - especially critical above 50 A load current.

Is this device suitable for unidirectional or bidirectional power flow applications?

Yes - the integrated SiC body diode supports bidirectional conduction with 56 A continuous forward current rating and 18 ns reverse recovery time. It is validated for use in bidirectional topologies such as dual-active-bridge DC/DC converters and regenerative braking circuits without external antiparallel diodes.

What thermal interface material is recommended for the HiP247-4 tab?

ST recommends thermally conductive, electrically insulating pastes or pads with thermal conductivity ≥3.0 W/m·K and dielectric strength ≥5 kV/mm. For automotive applications, silicone-based gap fillers (e.g., Dow Corning TC-5050) or ceramic-filled thermal pads (e.g., Laird Tflex 400) are preferred to maintain mechanical stability over 2000 thermal cycles from -40 °C to 150 °C.

SCT025W120G3-4AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 18 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1990 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 388W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCT025W120G3-4AG FAQ

1.How can I place an order for SCT025W120G3-4AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT025W120G3-4AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT025W120G3-4AG reliable?

The price and inventory of SCT025W120G3-4AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT025W120G3-4AG is usually 5 days.

3.What payment methods are accepted for SCT025W120G3-4AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT025W120G3-4AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT025W120G3-4AG?

SCT025W120G3-4AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT025W120G3-4AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT025W120G3-4AG?

For technical support, including SCT025W120G3-4AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT025W120G3-4AG requirements.

6.How does Aetrix verify that SCT025W120G3-4AG is sourced from the original manufacturer or authorized distributors?

All SCT025W120G3-4AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT025W120G3-4AG meets industry standards.

7.What is the process for return or replacement of SCT025W120G3-4AG?

All SCT025W120G3-4AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT025W120G3-4AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT025W120G3-4AG part is unused and in its original packaging.

Return procedure for SCT025W120G3-4AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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