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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040W120G3AG

Name: SCT040W120G3AG
Brand: STMicroelectronics
SKU: SCT040W120G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040W120G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCT040W120G3AG.pdf

Description:: HIP-247 IN LINE HEAT SINK 2MM

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Product details

Overview

SCT040W120G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide Power MOSFET designed for high-voltage, high-efficiency traction inverters and on-board chargers in electric vehicles. It delivers 1200 V drain-source voltage rating, 40 mΩ typical R_DS(on) at 18 V_GS and 16 A, 40 A continuous drain current at T_C = 25 °C and 100 °C, and operates up to 200 °C junction temperature - enabling compact, air-cooled EV power stages.

For engineers reviewing the SCT040W120G3AG datasheet, SCT040W120G3AG pinout, SCT040W120G3AG application, or SCT040W120G3AG equivalent, key selection criteria include its low-temperature-stable R_DS(on), fast switching energy (E_on = 173 µJ, E_off = 79 µJ @ 800 V), robust body diode (t_rr = 17 ns), and HiP247 thermal performance (R_thJC = 0.56 °C/W).

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology optimized for automotive-grade reliability and high-frequency operation. Its gate threshold voltage (1.8–4.2 V) and low Crss (10 pF) enable stable turn-on control and reduced Miller-induced shoot-through risk in half-bridge configurations.

The device integrates a fast, low-loss intrinsic body diode with 2.6 V forward voltage at 16 A and 91 nC reverse recovery charge - eliminating need for external anti-parallel Si diodes in bidirectional DC/DC converters and OBCs operating above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC bus systems with 50% voltage margin for transient overvoltage in EV traction inverters.
R_DS(on) typ.	40 mΩ @ V_GS = 18 V, I_D = 16 A - enables <1.3 W conduction loss at 40 A, critical for >98% system efficiency.
I_D cont.	40 A @ T_C = 25 °C and 100 °C - package-limited current allows sustained operation without derating in forced-air cooled modules.
E_on/E_off	173 µJ / 79 µJ @ V_DD = 800 V, I_D = 16 A, R_G = 5.6 Ω - enables 100+ kHz switching with <250 µJ total energy per cycle.
t_rr	17 ns - minimizes diode commutation losses and eliminates need for snubbers in hard-switched topologies.
T_J max	200 °C - permits smaller heatsinks and higher power density in space-constrained OBC and DC/DC designs.
R_thJC	0.56 °C/W - enables 312 W dissipation at ΔT = 175 °C, supporting high-power density module integration.

Pinout & Package

Supplied in the HiP247 package - a thermally enhanced TO-247 variant with isolated tab (D), gate (G), and source (S) terminals. The package features low-inductance layout, 20 mm × 15.6 mm footprint, and 5.45 mm pitch (e), optimized for high-current, high-dV/dt automotive applications.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to die backside; serves as primary heat path to heatsink; requires insulated mounting in half-bridge layouts.
G (Pin 1)	Gate	Control input for MOSFET channel; rated for -10 to 22 V; gate drive must limit dV/dt to avoid false turn-on during high-speed switching.
S (Pin 3)	Source	Reference node for gate drive and current sensing; low-inductance connection essential to minimize ringing and improve EMI performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use including vibration, thermal cycling, and humidity testing per JESD22 standards.
Low R_DS(on) over full temperature range	R_DS(on) increases only ~1.8× from 25 °C to 200 °C (vs. >3× for Si MOSFETs), enabling stable conduction loss across operating envelope.
Very fast intrinsic body diode	t_rr = 17 ns and Q_rr = 91 nC - reduces reverse recovery loss by >70% vs. comparable Si superjunction devices.
High-speed switching capability	Q_g = 56 nC, C_iss = 1329 pF, Crss = 10 pF - enables clean 20+ ns switching transitions with minimal gate drive power.
200 °C maximum junction temperature	Enables 100% rated current at 100 °C case temperature without derating - simplifies thermal design in under-hood environments.

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive stage in battery electric vehicles, operating at 400–800 V DC bus and switching up to 20 kHz.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter bridge; handles bidirectional current flow via intrinsic body diode during PWM dead-time.

Use Value: 40 mΩ R_DS(on) and 200 °C T_J allow 98.2% peak efficiency and 30% smaller heatsink volume vs. Si IGBT alternatives.

Use Scenario: Active rectification and isolation stage in bidirectional OBCs converting AC grid to HV battery and vice versa.

IC Role / Device Role / Timing Role: Unidirectional switch in totem-pole PFC and synchronous rectifier in LLC resonant DC/DC converter.

Use Value: Low Q_rr and fast t_rr eliminate reverse recovery spikes, enabling >96% efficiency at 10 kW with no external diode.

DC/DC Converter for HEV/EV

Traction Auxiliary Power Supply

Use Scenario: Isolated 400 V–12 V or 800 V–48 V conversion for vehicle auxiliary loads and battery management systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or dual-active-bridge topology operating at 100–300 kHz.

Use Value: 173 µJ E_on + 79 µJ E_off enables >97% efficiency at 200 kHz, reducing magnetics size by 40% vs. Si-based designs.

Use Scenario: Compact, high-reliability 12 V supply derived directly from traction battery in commercial EVs and buses.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck converter handling 40 A continuous output with tight thermal constraints.

Use Value: 0.56 °C/W R_thJC and 40 A rating at 100 °C case allow direct bolt-down cooling without thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0040120K	R_DS(on) = 40 mΩ, but Q_g = 62 nC and E_off = 102 µJ - higher gate charge and turn-off loss.	Less suitable for >150 kHz operation due to elevated switching losses; requires stronger gate driver.	Select when prioritizing cost over ultra-high-frequency efficiency; verify gate drive strength for 20+ V_GS swing.
ROHM SCT3040KL	R_DS(on) = 42 mΩ, t_rr = 22 ns, T_J max = 175 °C - lower temperature rating and slower diode.	Not AEC-Q101 qualified; limited to industrial-grade EV auxiliary systems, not main traction.	Choose only for non-safety-critical 1200 V applications where 25 °C lower junction limit is acceptable.

Compared with C3M0040120K and SCT3040KL, SCT040W120G3AG offers superior thermal robustness (200 °C), lower E_off, and automotive qualification - making it the preferred choice for main inverter and OBC primary switches where reliability and high-frequency efficiency are mandatory.

Availability

SCT040W120G3AG is available at Aetrix Electronics and suitable for electric traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for SCT040W120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative solutions across automotive, industrial, and power electronics markets since 1987.

This device belongs to ST's STPOWER SiC portfolio - engineered specifically for high-efficiency, high-reliability EV power conversion systems demanding AEC-Q101 compliance, 200 °C operation, and low-loss switching.

FAQ

What gate drive voltage is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 15–18 V for minimum R_DS(on) and robust noise immunity. Operation below 12 V increases conduction loss significantly; above 18 V risks gate oxide stress. A -5 V to +18 V drive with <±100 nA leakage ensures stable switching across -40 °C to 175 °C ambient.

Is external body diode replacement required in hard-switched topologies?

No. The intrinsic SiC body diode has t_rr = 17 ns and Q_rr = 91 nC - fully adequate for 100–200 kHz hard-switched PFC and DC/DC converters. External diodes add parasitic inductance and reduce efficiency; ST validates this device for unidirectional and bidirectional conduction without supplementation.

How does thermal resistance compare between HiP247 and standard TO-247 packages?

HiP247 achieves R_thJC = 0.56 °C/W versus ~1.0–1.2 °C/W for standard TO-247 - a >50% improvement enabled by thicker copper leadframe and optimized die attach. This allows 312 W dissipation at ΔT = 175 °C, supporting higher power density in constrained automotive modules.

Can SCT040W120G3AG be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (normalized R_DS(on) rises with TJ) enables inherent current sharing. ST recommends matched gate drive layout, identical PCB trace lengths, and Kelvin source connections to ensure balanced dynamic current distribution across parallel devices.

SCT040W120G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 16A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1329 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 312W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™

SCT040W120G3AG FAQ

1.How can I place an order for SCT040W120G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040W120G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040W120G3AG reliable?

The price and inventory of SCT040W120G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040W120G3AG is usually 5 days.

3.What payment methods are accepted for SCT040W120G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040W120G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040W120G3AG?

SCT040W120G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040W120G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040W120G3AG?

For technical support, including SCT040W120G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040W120G3AG requirements.

6.How does Aetrix verify that SCT040W120G3AG is sourced from the original manufacturer or authorized distributors?

All SCT040W120G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040W120G3AG meets industry standards.

7.What is the process for return or replacement of SCT040W120G3AG?

All SCT040W120G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT040W120G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040W120G3AG part is unused and in its original packaging.

Return procedure for SCT040W120G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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