STMicroelectronics SCT025H120G3AG

Overview

SCT025H120G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET in H²PAK-7 package, rated for 1200 V drain-source voltage, 27 mΩ typical R_DS(on) at 18 V_GS, and 55 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency switching element in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT025H120G3AG datasheet, SCT025H120G3AG pinout, SCT025H120G3AG application, or SCT025H120G3AG equivalent, key selection criteria include its low R_DS(on) over temperature, fast intrinsic body diode (t_rr = 16.8 ns), robust SOA up to 228 A pulsed current, and source-sensing capability for gate drive optimization.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology, delivering stable R_DS(on) across −75 °C to 175 °C (normalized R_DS(on) ≤ 2.0× at T_J = 175 °C) and low capacitances (C_iss = 1990 pF, C_rss = 12 pF at V_DS = 800 V). Its gate threshold voltage (V_GS(th) = 1.8–4.2 V) ensures reliable turn-on while maintaining noise immunity.

The integrated SiC body diode enables bidirectional conduction with low forward voltage (V_SD = 2.7 V at I_SD = 25 A) and minimal reverse recovery charge (Q_rr = 117 nC), supporting ZVS operation in hard-switched and resonant topologies. The H²PAK-7 package features a dedicated driver source pin (Pin 2) and power source pins (Pins 3–7) for Kelvin source sensing and low-inductance layout.

Key Specifications

Pinout & Package

H²PAK-7 package with isolated tab (Drain), 7-terminal surface-mount outline optimized for high-current, high-thermal-conductivity PCB layouts. Features separate driver source (Pin 2) and power source (Pins 3–7) terminals to eliminate source inductance impact on gate control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and IXFH50N120X2, SCT025H120G3AG offers superior current density (55 A in H²PAK-7 vs. 40–50 A in TO-247), automotive qualification, and integrated Kelvin source - making it optimal for space-constrained, safety-critical EV power stages.

Availability

SCT025H120G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and industrial 1200 V solar inverters requiring stable component supply, long-lifecycle support, and AEC-Q101 compliance.

Supply support for SCT025H120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and R&D operations across Europe, Asia, and the Americas.

This device belongs to ST's Automotive Power SiC portfolio, engineered specifically for high-reliability, high-efficiency power conversion in electric mobility systems - emphasizing thermal robustness, gate drive simplicity, and system-level efficiency gains.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is −10 V to +22 V, but ST specifies −5 V to +18 V as the recommended operating range. Applying +18 V ensures full enhancement and minimal R_DS(on), while −5 V guarantees robust turn-off under noisy conditions. Transient excursions up to +25 V are allowed for <1 µs, but sustained operation beyond +18 V accelerates gate oxide degradation.

Does the H²PAK-7 package require solder paste stencil optimization for thermal pad attachment?

Yes. The exposed drain tab requires a 70–80% copper-filled thermal pad stencil aperture with 0.15 mm thickness to ensure void-free solder joint formation. ST recommends SAC305 paste and reflow profile peaking at 245 °C for 60 seconds to achieve <5% voiding - critical for maintaining the specified 0.4 °C/W R_thJC.

Can this MOSFET replace silicon IGBTs directly in existing 1200 V inverter designs?

Yes, with gate drive and layout modifications. Its lower gate charge (73 nC vs. >300 nC for comparable IGBTs) enables faster switching, but requires reduced gate resistance (R_G ≈ 5–10 Ω) and careful Miller clamping. The Kelvin source pin must be routed separately from power source traces to avoid oscillation - unlike standard IGBT layouts.

Is the body diode suitable for continuous freewheeling in hard-switched PFC circuits?

Yes. With I_SD = 55 A continuous rating (package-limited) and V_SD = 2.7 V at 25 A, the intrinsic SiC diode supports unidirectional freewheeling in boost PFC stages up to 10 kW. Its low Q_rr (117 nC) and soft recovery prevent voltage overshoot, but thermal design must account for diode conduction loss in addition to MOSFET channel loss.