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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT018W65G3-4AG

Name: SCT018W65G3-4AG
Brand: STMicroelectronics
SKU: SCT018W65G3-4AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT018W65G3-4AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCT018W65G3-4AG.pdf

Description:: TO247-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT018W65G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide Power MOSFET designed for high-efficiency, high-temperature traction power stages. It delivers 650 V V_DS, 20 mΩ R_DS(on) (at V_GS = 18 V, T_J = 25 °C), 55 A continuous drain current, and operates up to T_J = 200 °C - enabling compact, high-frequency DC/DC converters and main inverters in EV/HEV systems.

For engineers reviewing the SCT018W65G3-4AG datasheet, SCT018W65G3-4AG pinout, SCT018W65G3-4AG application, or SCT018W65G3-4AG equivalent, key selection criteria include its HiP247-4 source-sensing package, low C_iss/C_oss (2077 pF / 180 pF), fast switching energy (E_on = 174 µJ, E_off = 149 µJ), robust body diode (t_rr = 20 ns), and automotive-grade thermal reliability.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology to achieve stable R_DS(on) across -55 °C to 200 °C and minimize switching losses via low Crss (20 pF) and gate charge (Q_g = 77 nC). Its integrated source sensing pin enables precise gate drive control under high di/dt conditions.

The device supports hard-switched topologies with 400 V bus voltage, 30 A load current, and 12 Ω gate resistance - delivering sub-100 ns total switching times (t_d(off) = 64 ns, t_f = 29 ns) while maintaining SOA integrity up to 1 ms pulse width at T_J ≤ 200 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC-link systems with 1.6× voltage margin for transient overvoltage in EV traction inverters.
R_DS(on) typ.	20 mΩ at V_GS = 18 V, T_J = 25 °C - Enables <1.2 W conduction loss at 55 A, critical for >98% efficiency in OBCs.
I_D cont.	55 A at T_C = 25 °C and 100 °C - Sustains full rated current without derating up to 100 °C case temperature.
Q_g	77 nC - Low gate charge reduces driver power demand and enables use of cost-effective 1–2 W gate drivers.
t_rr	20 ns - Ultra-fast reverse recovery minimizes commutation loss and eliminates need for external anti-parallel Si diodes.
R_thJC	0.44 °C/W - Enables high-power operation with minimal heatsink mass; 398 W P_TOT at T_C = 25 °C.
V_GS(th)	3.0 V typ. - Ensures robust noise immunity and reliable turn-on with standard 15 V gate drivers.

Pinout & Package

Package: HiP247-4 - 4-terminal Kelvin-source power package with isolated driver source (pin 3) for accurate gate control and reduced common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, TAB (Drain)	High-side power return path	Exposed metal tab electrically connected to drain; mounted to heatsink for thermal and electrical grounding.
2 (Power Source)	Main source current return	Carries full load current; connects to system ground/power rail with low-inductance layout.
3 (Driver Source)	Kelvin source reference for gate driver	Provides dedicated low-noise source reference to gate driver IC, eliminating V_GS error from source inductance.
4 (Gate)	Control input	Receives gate drive signal; requires negative turn-off bias (-5 V) for robust dv/dt immunity in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including 15-year lifetime under thermal cycling and humidity exposure.
200 °C maximum junction temperature	Enables operation in confined spaces near motors or transformers without forced air cooling.
Source sensing pin (Kelvin source)	Reduces effective gate threshold shift by >1.5 V under 100 A/µs di/dt, improving switching consistency.
Robust intrinsic body diode	t_rr = 20 ns and Q_rr = 147 nC support ZVS/ZCS soft-switching in resonant topologies without external diodes.
Low capacitance profile	C_iss/C_oss/C_rss = 2077/180/20 pF enables >100 kHz switching in hard-switched inverters with <1% capacitive loss.

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: Bidirectional 800 V–400 V DC/DC stage in battery management systems for fast-charging EVs.

IC Role / Device Role / Timing Role: High-side SiC switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 20 mΩ R_DS(on) and 0.44 °C/W R_thJC enable >97.5% peak efficiency and 50% smaller magnetics vs. Si IGBT solutions.

Use Scenario: Motor phase-leg switch in 400 V/800 V traction inverter driving permanent magnet synchronous motor.

IC Role / Device Role / Timing Role: Low-side switching element in six-pack configuration with active short-circuit protection.

Use Value: 200 °C T_J rating and AEC-Q101 compliance ensure functional safety compliance (ISO 26262 ASIL-C) under under-hood thermal stress.

On-Board Charger (OBC)

Traction Auxiliary Power Module

Use Scenario: AC/DC PFC front-end and isolated DC/DC stage in 11 kW bi-directional OBC.

IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC with 650 V blocking capability.

Use Value: Fast t_rr (20 ns) and low Q_rr eliminate reverse-recovery spikes, reducing EMI filter size by 30%.

Use Scenario: High-efficiency 12 V/48 V auxiliary supply for vehicle control units and ADAS sensors.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter operating at 300–500 kHz.

Use Value: Low C_rss (20 pF) and high V_DS rating allow stable zero-voltage switching across full load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0015065K	650 V, 15 mΩ, 65 A, TO-247-4L; lower R_DS(on) but higher Q_g (102 nC) and no source sensing pin.	Lacks Kelvin source; requires careful PCB layout to mitigate gate oscillation in high-di/dt traction inverters.	Select when lowest conduction loss dominates design priority and gate drive loop inductance is tightly controlled.
ROHM SCT3022KL	650 V, 22 mΩ, 50 A, TO-247-4L; slightly higher R_DS(on), lower t_rr (15 ns), but only rated to T_J = 175 °C.	Not AEC-Q101 qualified; limited to industrial-grade automotive subsystems (e.g., infotainment power).	Select for cost-sensitive non-safety-critical modules where 175 °C junction limit suffices and AEC-Q101 is not mandated.

Compared with C3M0015065K and SCT3022KL, SCT018W65G3-4AG uniquely combines AEC-Q101 qualification, 200 °C operation, and a dedicated driver source pin - making it the only option among the three validated for ASIL-C traction inverter main switches requiring long-term reliability under thermal transients.

Availability

SCT018W65G3-4AG is available at Aetrix Electronics and suitable for EV/HEV DC/DC converters, traction inverters, and on-board chargers requiring stable component supply, automotive-grade traceability, and long-lifecycle availability.

Supply support for SCT018W65G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with over 40 years of silicon carbide development.

This device belongs to ST's Automotive-Grade SiC Power MOSFET product line, engineered specifically for high-reliability, high-temperature traction power conversion in electric vehicles - emphasizing ruggedness, parametric stability, and functional safety compliance.

FAQ

What is the maximum recommended gate drive voltage for SCT018W65G3-4AG?

The absolute maximum V_GS is -10 V to +22 V, but the recommended operating range is -5 V to +18 V. Driving above +18 V increases gate oxide stress and accelerates wear-out; below -5 V risks insufficient turn-off margin during high dv/dt events. ST specifies +15 V turn-on and -5 V turn-off as optimal for balancing speed, loss, and reliability.

Does SCT018W65G3-4AG require a negative gate voltage for reliable turn-off?

Yes - a -5 V turn-off bias is recommended per ST's application guidance. This ensures full depletion of the channel under high dv/dt conditions (e.g., >50 V/ns in traction inverters), preventing spurious turn-on due to Miller coupling. The device's V_GS(th) shift with temperature further justifies negative bias for robustness.

How does the HiP247-4 package differ from standard TO-247-4L?

HiP247-4 features enhanced thermal performance (R_thJC = 0.44 °C/W vs. ~0.55 °C/W typical for TO-247-4L) and optimized internal leadframe geometry for lower source inductance. Its pin 3 (driver source) is electrically isolated from pin 2 (power source), enabling true Kelvin sensing - unlike TO-247-4L where both sources share one terminal.

Can SCT018W65G3-4AG replace silicon IGBTs directly in existing inverter designs?

No direct drop-in replacement is possible due to differences in gate drive requirements (SiC needs faster, lower-impedance drivers), layout (Kelvin source routing mandatory), and protection schemes (faster desaturation detection required). While it offers superior efficiency and power density, redesign of gate drive, snubbing, and fault handling is necessary for migration.

SCT018W65G3-4AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 30A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 2077 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 398W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCT018W65G3-4AG FAQ

1.How can I place an order for SCT018W65G3-4AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT018W65G3-4AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT018W65G3-4AG reliable?

The price and inventory of SCT018W65G3-4AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT018W65G3-4AG is usually 5 days.

3.What payment methods are accepted for SCT018W65G3-4AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT018W65G3-4AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT018W65G3-4AG?

SCT018W65G3-4AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT018W65G3-4AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT018W65G3-4AG?

For technical support, including SCT018W65G3-4AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT018W65G3-4AG requirements.

6.How does Aetrix verify that SCT018W65G3-4AG is sourced from the original manufacturer or authorized distributors?

All SCT018W65G3-4AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT018W65G3-4AG meets industry standards.

7.What is the process for return or replacement of SCT018W65G3-4AG?

All SCT018W65G3-4AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT018W65G3-4AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT018W65G3-4AG part is unused and in its original packaging.

Return procedure for SCT018W65G3-4AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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