STMicroelectronics SCT018H65G3AG

Overview

SCT018H65G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide N-channel Power MOSFET in H²PAK-7 package, rated for 650 V drain-source voltage, 20 mΩ typical R_DS(on) at 18 V_GS, and 55 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency switching device in high-power EV traction inverters and on-board chargers, leveraging low capacitance (C_iss = 2124 pF) and fast switching (t_d(off) = 56 ns).

For engineers reviewing the SCT018H65G3AG datasheet, SCT018H65G3AG pinout, SCT018H65G3AG application, or SCT018H65G3AG equivalent, key selection criteria include its automotive-grade qualification, temperature-stable R_DS(on) performance up to 175 °C, source-sensing capability for gate drive optimization, and robust intrinsic SiC body diode with t_rr = 20 ns.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology, delivering stable threshold voltage (V_GS(th) = 1.8–4.2 V) and normalized R_DS(on) variation <1.5× across –75 °C to 175 °C. Its low C_oss (184 pF) and Crss (18 pF) enable high-frequency operation while maintaining SOA integrity up to 312 A pulsed drain current.

The integrated source-sensing pin (Pin 2) separates driver return from power return, enabling precise gate control independent of source inductance drop. The intrinsic body diode supports bidirectional conduction with Q_rr = 147 nC and I_RRM = 11.8 A under dI/dt = 1000 A/μs conditions.

Key Specifications

Pinout & Package

H²PAK-7 package: 7-terminal surface-mount power package with exposed copper drain tab (Pin 7/TAB), optimized for low-inductance layout and high thermal conductivity. Dimensions per DS14097 Rev 2: L = 14.75–15.25 mm, W = 23.7–24.3 mm, H = 10.00–10.40 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065065K and SCT3022KL, SCT018H65G3AG delivers superior thermal performance (R_thJC = 0.39 °C/W vs. ≥0.55 °C/W), lower Q_gd (20.3 nC), and tighter V_GS(th) distribution-making it optimal for space-constrained, high-reliability EV power stages.

Availability

SCT018H65G3AG is available at Aetrix Electronics and suitable for electric traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, AEC-Q101 compliance, and production-ready SiC MOSFET performance.

Supply support for SCT018H65G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's Automotive-grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability electrified powertrain systems-including traction inverters, OBCs, and DC/DC converters-where thermal stability and switching fidelity are critical.

FAQ

What is the maximum recommended gate drive voltage for SCT018H65G3AG?

The absolute maximum gate-source voltage is –10 V to +22 V, but ST specifies a recommended operating range of –5 V to +18 V. Driving above +18 V increases gate oxide stress and accelerates long-term degradation, especially at elevated junction temperatures. For robustness in automotive applications, +15 V is commonly used for turn-on and –5 V for active miller clamping.

Does SCT018H65G3AG require a negative gate voltage for reliable turn-off?

Yes-ST recommends applying –5 V during turn-off to ensure fast, noise-immune depletion of the gate channel and prevent spurious turn-on caused by high dv/dt coupling through Crss. This is especially critical in half-bridge configurations where the high-side device experiences >50 V/ns common-mode transients during low-side switching.

How does the Kelvin source pin (Pin 2) improve switching performance?

Pin 2 provides a dedicated low-current return path for the gate driver, isolating the gate control loop from high di/dt power source currents flowing through Pins 3–7. This eliminates voltage drop across source inductance from affecting the effective V_GS, thereby improving switching timing accuracy, reducing overshoot, and enhancing system EMI behavior-particularly in high-frequency, high-current applications like OBC PFC stages.

Can SCT018H65G3AG replace silicon IGBTs directly in existing inverter designs?

No-direct replacement is not advised without circuit redesign. While voltage/current ratings overlap, SiC MOSFETs exhibit faster switching, lower gate charge, and different gate drive requirements (e.g., negative turn-off, lower R_G). Layout changes (shorter gate loops, Kelvin source routing), gate driver selection (bipolar output, <5 Ω impedance), and SOA validation are mandatory before integration into legacy IGBT-based platforms.