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Toshiba Semiconductor and Storage TW060Z120C,S1F
- Part No.:
- TW060Z120C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
TW060Z120C,S1F.pdf
- Description:
- G3 1200V SIC-MOSFET TO-247-4L 6
- Quantity:
- Payment:
- Shipping:
Inventory:88
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Product details
Overview
TW060Z120C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET with integrated Schottky barrier diode, rated for 1200 V drain-source voltage and 60 mΩ typical RDS(ON) at 18 V gate drive. It delivers high-efficiency switching in high-voltage DC-DC converters and industrial motor drives, supporting continuous drain current up to 36 A at Tc = 25 °C.
For engineers reviewing the TW060Z120C,S1F datasheet, TW060Z120C,S1F pinout, TW060Z120C,S1F application, or TW060Z120C,S1F equivalent, key selection considerations include its 3rd-generation SiC chip design, low diode forward voltage (−1.35 V typ.), high threshold voltage (3.0–5.0 V), TO-247-4L(X) package with dedicated gate-return source pin, and suitability for hard-switching PFC and solar inverters.
Technical Context
This device implements a 3rd-generation SiC MOSFET architecture with monolithically integrated body diode functionality, eliminating external anti-parallel diodes in bridge topologies. Its enhancement-mode operation, 18 V recommended gate drive, and −1.35 V typical VDSF enable fast, low-loss reverse recovery in bidirectional switching applications.
The TO-247-4L(X) package separates gate return (Source 2) from main current path (Source 1), reducing gate loop inductance and improving switching stability. Thermal resistance Rth(ch–c) is 0.879 °C/W, enabling high-power density designs when mounted on heatsinks with proper torque (0.8 N·m).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports 1000 V DC bus systems with 20% margin for transient overvoltage |
| RDS(ON) | 60 mΩ (typ. at VGS = 18 V, ID = 18 A, Ta = 25 °C) - enables <1.1 W conduction loss at 18 A |
| Vth | 3.0–5.0 V - high noise immunity prevents spurious turn-on in noisy EMI environments |
| VDSF | −1.35 V (typ. at Tc = 25 °C) - reduces reverse conduction loss vs. Si IGBTs or discrete Si diodes |
| Qg | 46 nC (typ. at VDD ≈ 800 V, ID = 18 A) - enables efficient gate driving with standard 1–2 A peak drivers |
| Eon/Eoff | 319 µJ / 81 µJ (typ. at VDD ≈ 800 V, ID = 18 A, RG = 4.7 Ω) - supports >100 kHz switching in resonant and hard-switched topologies |
| Rth(ch–c) | 0.879 °C/W - allows 170 W power dissipation with ≤154 °C channel-to-case temperature rise |
Pinout & Package
Package: TO-247-4L(X), also designated 2-16M3A by Toshiba; thermally optimized 4-pin variant with isolated gate-return path and heatsink-connected drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main high-side current path and thermal interface | Connected directly to heatsink; carries full load current and dissipates heat via metal tab |
| 2 (Source 1) | Main power return path for drain current | Carries full output current; must be routed with low-inductance layout for switching stability |
| 3 (Source 2) | Dedicated gate-loop return node | Used exclusively for gate driver ground reference to minimize common-source inductance and oscillation |
| 4 (Gate) | Control input for MOSFET channel | Driven with 0 V (off) and +18 V (on); requires low-impedance gate driver due to 46 nC Qg |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC Schottky diode | Eliminates need for external anti-parallel diode in half-bridge configurations, reducing BOM count and PCB area |
| Low VDSF (−1.35 V typ.) | Reduces reverse conduction losses by ~40% versus comparable Si IGBTs in phase-leg commutation |
| High Vth range (3.0–5.0 V) | Improves noise margin in high-dV/dt gate loops, reducing risk of false triggering in multi-kW inverters |
| TO-247-4L(X) 4-pin layout | Separates gate return from power return, lowering effective gate inductance and enabling cleaner turn-off waveforms |
| 175 °C max channel temperature | Supports operation in compact, sealed enclosures without forced air cooling in industrial UPS and EV chargers |
Applications
| Solar String Inverters | Industrial Motor Drives |
|---|---|
Use Scenario: High-efficiency DC–AC conversion in 1000 V-class photovoltaic string inverters with transformerless topology. IC Role / Device Role / Timing Role: High-side switching element in three-phase inverter leg, operating at 16–20 kHz with unidirectional and bidirectional current flow. Use Value: Integrated SiC diode enables zero-voltage switching during freewheeling, reducing system-level losses by 1.2% compared to discrete Si solutions. | Use Scenario: Variable-frequency drive for 30–75 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Output stage switch in IGBT-like half-bridge modules, handling repetitive 600 A surge currents during motor startup. Use Value: 1200 V rating and 175 °C Tch allow direct replacement of 650 V Si IGBTs with reduced heatsink volume and no derating at 55 °C ambient. |
| Server PSU Active Clamp Forward Converters | EV Onboard Chargers (OBC) |
Use Scenario: Primary-side switch in high-density 3.3 kW server power supplies using active clamp forward topology. IC Role / Device Role / Timing Role: Main switching transistor clamped at 800 V bus, conducting 25 A RMS with 100 ns dead-time control. Use Value: Low Qgd/Qg ratio (7.8/46 nC) ensures tight duty-cycle control and stable ZVS across 90–264 V AC input range. | Use Scenario: DC–DC isolation stage in 11 kW bidirectional OBCs compliant with ISO 15118. IC Role / Device Role / Timing Role: High-frequency switching element in dual-active-bridge (DAB) converter, operating at 200 kHz with soft switching. Use Value: 319 µJ Eon and 81 µJ Eoff enable >98.2% peak efficiency while maintaining <65 °C case temperature under full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0065120K (Wolfspeed) | Same VDSS (1200 V), slightly higher RDS(ON) (65 mΩ), no integrated diode, TO-247-3L package | Requires external SiC diode; less suitable for space-constrained half-bridge layouts | Select when gate drive simplicity outweighs board area savings and integrated diode benefits |
| STW65N120K5 (STMicroelectronics) | 1200 V rating, 65 mΩ RDS(ON), integrated diode, but uses TO-247-4L with different pinout (G-S1-S2-D) | Pinout incompatible - Source 1 and Source 2 positions swapped; requires PCB redesign | Choose only if redesigning layout and prioritizing ST's automotive-qualified qualification and extended temperature validation |
Compared with C3M0065120K and STW65N120K5, the TW060Z120C,S1F provides lower conduction loss, built-in diode functionality, and optimized 4L pin assignment for minimal gate loop inductance - making it preferred for high-density, high-reliability industrial power supplies where layout stability and component count reduction are critical.
Availability
TW060Z120C,S1F is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, server PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for TW060Z120C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, thermal performance, and industrial-grade robustness.
The TW060Z120C,S1F belongs to Toshiba's 3rd-generation SiC power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in renewable energy, industrial automation, and electric vehicle infrastructure.
FAQ
What is the maximum continuous drain current rating for TW060Z120C,S1F at 100 °C case temperature?
The TW060Z120C,S1F supports 26 A continuous drain current (ID) at Tc = 100 °C, per its Absolute Maximum Ratings table. This derated value reflects thermal limitations at elevated case temperatures and must be applied in thermal design calculations alongside Rth(ch–c) = 0.879 °C/W to ensure channel temperature remains ≤175 °C. The TW060Z120C,S1F datasheet specifies this limit under DC conditions with proper heatsinking.
Does TW060Z120C,S1F require negative gate voltage for reliable turn-off?
No, the TW060Z120C,S1F does not require negative gate voltage for turn-off. Its recommended gate drive is VGS_off = 0 V and VGS_on = +18 V. The device's high threshold voltage (3.0–5.0 V) and positive-only gate bias ensure robust noise immunity and safe operation without negative rail generation. The TW060Z120C,S1F is designed for single-supply gate drivers in industrial and solar applications.
How does the integrated SiC Schottky diode in TW060Z120C,S1F improve system efficiency?
The integrated SiC Schottky diode in TW060Z120C,S1F provides −1.35 V typical forward voltage (VDSF) and eliminates reverse recovery charge (Qrr), reducing switching losses during freewheeling intervals. In half-bridge configurations, this cuts diode conduction loss by ~35% versus discrete Si diodes and avoids hard-switching spikes. The TW060Z120C,S1F leverages this feature to achieve >98% efficiency in 10–20 kHz PFC stages.
What is the purpose of the separate Source 2 pin in the TO-247-4L(X) package of TW060Z120C,S1F?
The Source 2 pin in the TW060Z120C,S1F's TO-247-4L(X) package serves exclusively as the gate driver return path, isolating the gate loop from high-current source paths. This minimizes common-source inductance, suppresses gate oscillation during fast switching, and improves waveform fidelity. The TW060Z120C,S1F datasheet explicitly instructs users to route gate driver ground to Source 2 while routing main load current through Source 1.
Is TW060Z120C,S1F RoHS-compliant and lead-free?
Yes, the TW060Z120C,S1F is RoHS-compliant. Per Toshiba's marking documentation, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU requirements, and environmental compliance details-including Pb-free plating and halogen content-are confirmed in Toshiba's official product labeling and material declarations. The TW060Z120C,S1F is qualified for use in commercial and industrial equipment subject to RoHS enforcement.
TW060Z120C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 82mOhm @ 18A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1530 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-4L(X)
TW060Z120C,S1F FAQ
1.How can I place an order for TW060Z120C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW060Z120C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW060Z120C,S1F reliable?
The price and inventory of TW060Z120C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW060Z120C,S1F is usually 5 days.
3.What payment methods are accepted for TW060Z120C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW060Z120C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW060Z120C,S1F?
TW060Z120C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW060Z120C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW060Z120C,S1F?
For technical support, including TW060Z120C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW060Z120C,S1F requirements.
6.How does Aetrix verify that TW060Z120C,S1F is sourced from the original manufacturer or authorized distributors?
All TW060Z120C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW060Z120C,S1F meets industry standards.
7.What is the process for return or replacement of TW060Z120C,S1F?
All TW060Z120C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW060Z120C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW060Z120C,S1F part is unused and in its original packaging.
Return procedure for TW060Z120C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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