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Toshiba Semiconductor and Storage TW027Z65C,S1F
- Part No.:
- TW027Z65C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
TW027Z65C,S1F.pdf
- Description:
- G3 650V SIC-MOSFET TO-247-4L 27
- Quantity:
- Payment:
- Shipping:
Inventory:80
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Product details
Overview
TW027Z65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET with integrated Schottky barrier diode, rated for 650 V drain-source voltage and 27 mΩ typical on-resistance at 18 V gate drive, designed for high-efficiency switching voltage regulators in industrial and server power supplies.
For engineers reviewing the TW027Z65C,S1F datasheet, TW027Z65C,S1F pinout, TW027Z65C,S1F application, or TW027Z65C,S1F equivalent, key selection criteria include its 3rd-generation SiC chip architecture, low diode forward voltage (−1.35 V), high threshold voltage (3.0–5.0 V), TO-247-4L(X) package with dedicated gate-return source pin, and pulsed drain current capability up to 170 A.
Technical Context
This device implements an enhancement-mode SiC MOSFET with built-in body diode optimized for hard-switching topologies. Its gate threshold voltage range (3.0–5.0 V) reduces susceptibility to noise-induced turn-on, while the −1.35 V typical diode forward voltage enables lower conduction losses during freewheeling in synchronous rectification.
The TO-247-4L(X) package separates source terminals-Source 1 carries main current, Source 2 serves exclusively as gate-drive return-minimizing source inductance impact on switching dynamics. Thermal resistance from channel to case is 0.961 °C/W, supporting high-power operation with heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports DC-link voltages up to 400 V bus in industrial SMPS with margin |
| RDS(ON) | 27 mΩ (typ.) at VGS = 18 V, ID = 29 A - enables <1.5 W conduction loss at 30 A continuous |
| Vth | 3.0–5.0 V - ensures robust noise immunity and predictable turn-on behavior |
| VDSF | −1.35 V (typ.) - reduces reverse conduction loss vs. standard Si MOSFETs with parasitic body diodes |
| IDP | 170 A (pulsed, Tc = 25 °C) - supports high peak-current transient handling in LLC resonant converters |
| Rth(ch-c) | 0.961 °C/W - allows >150 W dissipation with 100 °C temperature rise across heatsink interface |
| Qg | 65 nC (typ.) - determines gate driver power requirement and switching speed trade-off |
Pinout & Package
Package: TO-247-4L(X), also designated 2-16M3A by Toshiba; thermally enhanced 4-pin variant with isolated gate-return path and heatsink-connected drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main power output terminal / heatsink connection | Electrically tied to metal tab; must be mounted to heatsink for thermal management |
| 2 (Source 1) | Main current return path | Carries full load current; connects to power ground plane or low-side shunt |
| 3 (Source 2) | Gate-drive reference return | Must be used exclusively for gate driver return to minimize common-source inductance |
| 4 (Gate) | Control input | Receives 0 V / +18 V logic-level signal; requires low-inductance gate loop layout |
Key Features
| Feature | Design Value |
|---|---|
| 3rd-generation SiC chip with integrated SBD | Eliminates need for external anti-parallel diode and reduces PCB area in half-bridge layouts |
| Low VDSF (−1.35 V typ.) | Reduces reverse conduction loss by ~40% versus Si MOSFETs with similar RDS(ON) |
| Dual-source pin configuration | Enables Kelvin-source gate driving for precise VGS control and reduced switching overshoot |
| High Vth (3.0–5.0 V) | Prevents spurious turn-on during fast dv/dt transients in high-frequency converters |
| Enhancement-mode operation | Ensures default-OFF safety state without external bias circuitry |
Applications
| Server Power Supply | Industrial AC-DC Converter |
|---|---|
Use Scenario: High-density 3 kW front-end PFC and LLC resonant converter in cloud data center PSU. IC Role / Device Role / Timing Role: Primary-side SiC MOSFET in totem-pole PFC and secondary-side synchronous rectifier in LLC stage. Use Value: Enables >98% efficiency at 230 VAC input via low RDS(ON) and fast switching with minimal EMI. | Use Scenario: 1.5 kW programmable DC power supply for factory automation test equipment. IC Role / Device Role / Timing Role: Switching element in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: Delivers stable output under dynamic load steps using high dV/dt immunity and low Qrr (358 nC). |
| Solar Microinverter | EV Onboard Charger |
Use Scenario: Dual-phase interleaved DC-DC boost stage in residential solar microinverter (600 V PV input). IC Role / Device Role / Timing Role: High-side switch in boost converter with bidirectional capability enabled by integrated SBD. Use Value: Achieves >99% peak efficiency and extends lifetime via low channel temperature rise (Tch ≤ 175 °C). | Use Scenario: Isolated DC-DC stage in 6.6 kW OBC for Level 2 charging. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge topology with ZVS operation. Use Value: Supports 100 kHz+ operation with low Eon/Eoff (163/100 µJ) and reduced gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC27H065D | Same 650 V rating and 27 mΩ RDS(ON), but TO-247-3L package; no dedicated gate-return source pin | Lacks Kelvin-source capability; requires careful gate loop layout to mitigate source inductance effects | Preferred where board space is constrained and gate drive layout can be tightly controlled |
| IXYS IXTH27N65X2 | 650 V, 27 mΩ, but uses Gen 2 SiC process; higher Qg (72 nC) and VDSF (−1.5 V) | Higher switching loss and slightly lower reverse conduction efficiency than TW027Z65C,S1F | Selected when legacy design compatibility with IXYS gate drivers is required |
Compared with STPSC27H065D and IXTH27N65X2, the TW027Z65C,S1F offers superior gate-drive stability via its 4L package and lowest VDSF in its class, making it optimal for high-reliability, high-frequency PFC and resonant converters where diode conduction loss dominates.
Availability
TW027Z65C,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and solar microinverters requiring stable component supply and long-term production support.
Supply support for TW027Z65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, energy efficiency, and industrial-grade performance.
The TW027Z65C,S1F belongs to Toshiba's 3rd-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications in next-generation power conversion systems.
FAQ
What is the recommended gate drive voltage for TW027Z65C,S1F?
The TW027Z65C,S1F specifies a recommended gate-source drive voltage of +18 V for turn-on and 0 V for turn-off. This ensures full enhancement of the SiC channel while maintaining safe operation within the ±25 V/−10 V absolute maximum gate-source voltage rating. Operating below 15 V may increase RDS(ON) and conduction loss; exceeding +18 V provides diminishing returns and risks accelerated gate oxide stress over time. The TW027Z65C,S1F datasheet confirms this value under "Features" and "Electrical Characteristics" sections.
Does TW027Z65C,S1F have an integrated body diode, and how does it differ from standard silicon MOSFETs?
Yes, the TW027Z65C,S1F integrates a silicon carbide Schottky barrier diode (SBD) as part of its 3rd-generation chip design. Unlike the parasitic PN junction body diode in silicon MOSFETs, this SBD exhibits a low forward voltage (−1.35 V typ.), near-zero reverse recovery charge (Qrr = 358 nC), and no minority-carrier storage delay. These traits eliminate reverse recovery losses and EMI spikes during hard commutation, making the TW027Z65C,S1F especially suited for high-frequency totem-pole PFC and synchronous rectification.
What is the purpose of the separate Source 2 pin on TW027Z65C,S1F?
The Source 2 pin on the TW027Z65C,S1F is designated exclusively as the gate-drive return path, enabling Kelvin-source (4-wire) gate control. This physically isolates the high-current Source 1 path from the gate-loop reference, eliminating voltage drop across source inductance that would otherwise distort effective VGS during switching transitions. Using Source 2 correctly ensures accurate gate threshold control and minimizes ringing or false turn-on-critical for stable operation of the TW027Z65C,S1F in high-dv/dt environments like resonant converters.
What thermal derating guidance applies to TW027Z65C,S1F at elevated case temperatures?
The TW027Z65C,S1F has a maximum channel temperature limit of 175 °C and a channel-to-case thermal resistance of 0.961 °C/W. At Tc = 100 °C, its continuous drain current rating drops from 58 A (at Tc = 25 °C) to 42 A per the Absolute Maximum Ratings table. Designers must ensure heatsink design maintains Tc ≤ 100 °C under worst-case ambient and airflow conditions. The TW027Z65C,S1F datasheet explicitly warns against sustained operation near absolute max ratings without reliability derating per Toshiba's Semiconductor Reliability Handbook.
Is TW027Z65C,S1F RoHS compliant, and what marking indicates compliance?
Yes, the TW027Z65C,S1F is RoHS compliant. Per the datasheet's "Marking" section, RoHS-compliant units are identified by an underlined lot number on the device marking, accompanied by "[G]/RoHS COMPATIBLE" or "[G]/RoHS [[Pb]]". Non-underlined markings indicate lead-containing versions. Customers should verify compliance status with their Toshiba sales representative, as environmental specifications are not guaranteed by production test and depend on specific manufacturing lot traceability. The TW027Z65C,S1F documentation references Directive 2011/65/EU.
TW027Z65C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 29A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2288 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-4L(X)
TW027Z65C,S1F FAQ
1.How can I place an order for TW027Z65C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW027Z65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW027Z65C,S1F reliable?
The price and inventory of TW027Z65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW027Z65C,S1F is usually 5 days.
3.What payment methods are accepted for TW027Z65C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW027Z65C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW027Z65C,S1F?
TW027Z65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW027Z65C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW027Z65C,S1F?
For technical support, including TW027Z65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW027Z65C,S1F requirements.
6.How does Aetrix verify that TW027Z65C,S1F is sourced from the original manufacturer or authorized distributors?
All TW027Z65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW027Z65C,S1F meets industry standards.
7.What is the process for return or replacement of TW027Z65C,S1F?
All TW027Z65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW027Z65C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW027Z65C,S1F part is unused and in its original packaging.
Return procedure for TW027Z65C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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