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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT011HU75G3AG

Name: SCT011HU75G3AG
Brand: STMicroelectronics
SKU: SCT011HU75G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT011HU75G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT011HU75G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT011HU75G3AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide (SiC) N-channel Power MOSFET designed for high-voltage, high-current traction and power conversion systems. It delivers 750 V drain-source breakdown voltage, 11.4 mΩ typical R_DS(on) at 18 V_GS, 110 A continuous drain current at T_C = 25 °C, and features a robust intrinsic body diode with 22 ns reverse recovery time - enabling use in EV main inverters and on-board chargers.

For engineers reviewing the SCT011HU75G3AG datasheet, SCT011HU75G3AG pinout, SCT011HU75G3AG application, or SCT011HU75G3AG equivalent, key selection criteria include its HU3PAK package thermal resistance (R_thJC = 0.23 °C/W), low gate charge (Q_g = 154 nC), and stable R_DS(on) over temperature - critical for high-frequency, high-efficiency SiC-based traction inverters.

Technical Context

This device implements ST's third-generation SiC MOSFET technology, optimized for automotive-grade reliability and high-speed switching in 400–800 V DC bus systems. Its gate threshold voltage (1.8–4.2 V) and ±100 nA gate leakage support robust drive margin under harsh conditions, while low C_iss (3860 pF) and C_rss (31 pF) enable fast, low-loss transitions.

The integrated source-sensing pin (Pin 2) enables Kelvin-source connection to eliminate source inductance effects during high-di/dt operation. The device operates up to T_J = 175 °C and maintains <2× R_DS(on) drift across -55 to 175 °C, supporting compact thermal design in space-constrained traction modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	750 V - Supports 800 V nominal DC-link systems with 15% margin for transients in EV traction inverters.
R_DS(on) typ.	11.4 mΩ @ V_GS = 18 V, I_D = 80 A - Enables <1.5 W conduction loss at 110 A, reducing heatsink size.
I_D cont.	110 A @ T_C = 25 °C - Sustains full rated current without derating at moderate case temperatures.
Q_g	154 nC - Low gate charge reduces driver power and enables >100 kHz switching with standard gate drivers.
t_r/t_f	11 ns / 9 ns - Fast edge rates minimize switching transition losses in hard-switched topologies.
V_SD	2.6 V @ I_SD = 50 A - Low forward drop of intrinsic body diode improves efficiency in bidirectional OBC and regenerative braking.
R_thJC	0.23 °C/W - Enables direct mounting to cold plates with minimal thermal interface resistance for high-power density.

Pinout & Package

HU3PAK is a top-side cooled, 7-terminal surface-mount power package with exposed drain tab (Pin 1/TAB) for low-inductance, high-current routing and thermal path optimization. The package measures 11.8 mm × 14.0 mm × 3.5 mm (L × W × H) and supports tape-and-reel automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Power Drain Terminal	Exposed copper pad - primary current path and thermal interface to heatsink/cold plate.
1 (Gate)	Control Gate Input	Standard gate drive input; requires negative turn-off bias (-5 V) for robust noise immunity.
2 (Driver Source)	Kelvin Source Sense	Provides dedicated low-noise return path for gate driver to eliminate source inductance impact on switching.
3–7 (Power Source)	Main Source Current Return	Parallel source terminals reduce current density and resistive loss; essential for 110 A continuous operation.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including EV traction inverters and OBCs per stress test requirements.
Source sensing pin (Kelvin source)	Enables accurate gate control under high di/dt, eliminating false turn-on due to source inductance-induced voltage spikes.
Low R_DS(on) over full temperature range	R_DS(on) increases only ~1.5× from 25 °C to 175 °C - ensures predictable conduction loss and thermal stability.
Fast, robust intrinsic body diode	22 ns t_rr, 14 A I_RRM, 186 nC Q_rr - supports ZVS operation and reduces snubber losses in bidirectional converters.
High-speed switching capability	154 nC Q_g, 31 pF C_rss, and 23 ns t_d(on) enable efficient operation above 100 kHz in resonant and hard-switched topologies.

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: High-efficiency 800 V to 400 V bi-directional DC/DC converter in 800 V architecture EVs.

IC Role / Device Role / Timing Role: Primary high-side SiC MOSFET switch operating at 100–200 kHz with synchronous rectification.

Use Value: 11.4 mΩ R_DS(on) and 0.23 °C/W R_thJC enable >98% peak efficiency and 30% smaller magnetics vs. Si-based solutions.

Use Scenario: Traction inverter phase-leg switch in battery electric vehicles with 400–800 V battery packs.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element in 6-pack inverter module handling motor phase currents up to 110 A RMS.

Use Value: AEC-Q101 qualification and 175 °C junction rating ensure long-term reliability under repeated thermal cycling in under-hood environments.

On-Board Charger (OBC)

Industrial Motor Drive

Use Scenario: AC/DC PFC stage and DC/DC isolation stage in 11 kW bi-directional OBC for V2G applications.

IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC and active clamp switch in isolated LLC resonant converter.

Use Value: Low Q_gd/Q_gs ratio (38/53.5 nC) and fast t_r/t_f reduce switching loss and EMI generation during high-frequency operation.

Use Scenario: High-power servo drive for industrial automation requiring high dynamic response and thermal resilience.

IC Role / Device Role / Timing Role: Output stage switch in three-phase inverter delivering 100+ A output current with precise PWM timing control.

Use Value: Stable V_GS(th) (1.8–4.2 V) and low gate leakage (±100 nA) ensure consistent turn-on behavior across wide ambient temperature ranges (-40 to 125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0065070D	700 V V_DS, 6.5 mΩ R_DS(on), TO-247-4L package, no Kelvin source pin.	Limited to 700 V systems; higher R_DS(on) at elevated temperature; lacks dedicated driver source terminal.	Preferred where lower conduction loss at 700 V is prioritized over automotive qualification and Kelvin-source precision.
ROHM SCT3022KL	650 V V_DS, 22 mΩ R_DS(on), TO-247N package, AEC-Q101 qualified, no Kelvin source.	Lower voltage rating and higher on-resistance limit use to 400 V systems; no source sensing for high-di/dt control.	Selected when cost sensitivity outweighs need for 750 V headroom and ultra-low R_DS(on) in compact packages.

Compared with C3M0065070D and SCT3022KL, SCT011HU75G3AG uniquely combines 750 V rating, 11.4 mΩ on-resistance, AEC-Q101 compliance, and Kelvin-source capability - making it optimal for next-gen 800 V EV traction inverters demanding both performance and functional safety.

Availability

SCT011HU75G3AG is available at Aetrix Electronics and suitable for EV traction inverters, on-board chargers, and high-efficiency DC/DC converters requiring stable component supply, automotive-grade traceability, and long-lifecycle support.

Supply support for SCT011HU75G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with R&D and manufacturing operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density automotive and industrial power conversion systems operating above 600 V.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is -10 V to +22 V, but the recommended operating range is -5 V to +18 V. Operating within this window ensures robust noise immunity during turn-off (with -5 V gate drive) and avoids oxide stress during turn-on. Exceeding +18 V risks long-term gate oxide degradation, especially at elevated junction temperatures.

How does the Kelvin source pin (Pin 2) improve switching performance?

Pin 2 provides a dedicated low-inductance return path for the gate driver, decoupling gate loop current from high di/dt source current paths. This eliminates voltage spikes across source inductance that could cause unintended turn-on, enabling stable operation at >100 kHz with reduced gate drive complexity and lower EMI.

Can SCT011HU75G3AG replace silicon IGBTs in existing 750 V inverter designs?

Yes - with gate drive redesign. Its lower V_GS(th) (1.8–4.2 V), faster switching, and absence of tail current allow direct substitution in many 750 V IGBT-based inverters. However, gate driver must support negative turn-off bias (-5 V), and layout must minimize gate loop inductance to exploit full SiC benefits.

What thermal interface material is recommended for the HU3PAK drain tab?

ST recommends thermally conductive, electrically insulating pastes or pads with thermal conductivity ≥3.0 W/m·K and bond line thickness ≤0.1 mm. For automotive applications, silicone-free, halogen-free materials meeting ISO/TS 16949 process controls are required to ensure long-term reliability under thermal cycling.

SCT011HU75G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT011HU75G3AG FAQ

1.How can I place an order for SCT011HU75G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT011HU75G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT011HU75G3AG reliable?

The price and inventory of SCT011HU75G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT011HU75G3AG is usually 5 days.

3.What payment methods are accepted for SCT011HU75G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT011HU75G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT011HU75G3AG?

SCT011HU75G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT011HU75G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT011HU75G3AG?

For technical support, including SCT011HU75G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT011HU75G3AG requirements.

6.How does Aetrix verify that SCT011HU75G3AG is sourced from the original manufacturer or authorized distributors?

All SCT011HU75G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT011HU75G3AG meets industry standards.

7.What is the process for return or replacement of SCT011HU75G3AG?

All SCT011HU75G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT011HU75G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT011HU75G3AG part is unused and in its original packaging.

Return procedure for SCT011HU75G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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