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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31E60W,S1VX

Name: TK31E60W,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK31E60W,S1VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31E60W,S1VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK31E60W,S1VX.pdf

Description:: MOSFET N-CH 600V 30.8A TO220

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Product details

Overview

TK31E60W,S1VX from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-efficiency switching in offline AC-DC converters and industrial SMPS. It delivers 600 V V_DSS, 30.8 A I_D (DC), R_DS(ON) = 0.073 Ω (typ.), and operates with gate threshold voltage of 2.7–3.7 V - enabling robust control in 400 V bus applications such as server PSUs and telecom rectifiers.

For engineers reviewing the TK31E60W,S1VX datasheet, TK31E60W,S1VX pinout, TK31E60W,S1VX application, or TK31E60W,S1VX equivalent, key selection criteria include avalanche ruggedness (E_AS = 437 mJ), dv/dt immunity (≥50 V/ns), thermal resistance (R_th(ch-c) = 0.543 °C/W), and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process, integrating a super-junction structure to reduce specific on-resistance while maintaining high-voltage blocking capability. Its enhancement-mode operation (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 10 V gate drive, and its low Q_g (86 nC typ.) supports high-frequency PWM switching up to 100 kHz in hard-switched topologies.

The device features an integrated body diode with t_rr = 410 ns (typ.) and Q_rr = 3.5 µC (typ.), optimized for ZVS-assisted flyback and LLC resonant converters. Its guaranteed single-pulse avalanche energy (437 mJ) and rated I_AR = 7.7 A support robust operation under transient overvoltage conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC bus designs with ≥50% voltage margin against line surges and ringing.
R_DS(ON)	0.073 Ω (typ.) at V_GS = 10 V - enables <1.2 W conduction loss at 30.8 A, critical for high-power density SMPS.
I_D (DC)	30.8 A at T_c = 25 °C - defines continuous current handling with external heatsink; derates to zero at 150 °C channel temperature.
E_AS	437 mJ - specifies single-pulse avalanche energy rating; allows safe clamping of inductive switching spikes without failure.
Q_g	86 nC (typ.) - determines gate drive power requirement and switching speed; compatible with standard 1–2 A peak gate drivers.
dv/dt immunity	≥50 V/ns - prevents false turn-on during high dV/dt transients in bridge-leg configurations.
R_th(ch-c)	0.543 °C/W - enables direct thermal coupling to heatsink; supports >200 W dissipation with ≤100 °C temperature rise.

Pinout & Package

TK31E60W,S1VX is housed in a through-hole TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features standardized mechanical dimensions compliant with JEDEC TO-220AB.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal; requires low-inductance gate loop and ≥10 V drive for full enhancement.
2 (Tab/Heatsink Pad)	Drain	High-voltage power terminal; electrically connected to metal tab - must be isolated from chassis unless referenced to high-side potential.
3 (Lead)	Source	Power return path and gate reference node; forms common source node in low-side switch configuration.

Key Features

Feature	Design Value
DTMOS™ super-junction structure	Reduces R_DS(ON) × area product by >40% vs. planar MOSFETs - enables smaller heatsinks and higher power density.
Enhancement-mode gate threshold	V_th = 2.7–3.7 V ensures clean turn-on with industry-standard 5 V or 10 V controllers and avoids accidental conduction during startup.
Integrated avalanche-rated body diode	t_rr = 410 ns and Q_rr = 3.5 µC enable predictable reverse recovery behavior in quasi-resonant and synchronous rectifier circuits.
Low Crss (9.5 pF typ.)	Minimizes Miller effect - improves noise immunity and enables stable operation in high-dV/dt half-bridge environments.
ESD-sensitive design	Requires handling per JESD22-A114; gate oxide integrity depends on proper grounding and static-safe assembly practices.

Applications

Server Power Supply Units	Industrial AC-DC Converters
Use Scenario: Primary-side switching in 1–3 kW redundant PSUs for data center rack servers. IC Role / Device Role / Timing Role: High-voltage, high-current main switch in active-clamp forward or LLC resonant topology. Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and improve surge survivability in 230 VAC input systems.	Use Scenario: Main switch in programmable AC-DC power supplies for factory automation PLCs and HMIs. IC Role / Device Role / Timing Role: Hard-switched primary-side MOSFET operating at 50–100 kHz with 400 V DC bus. Use Value: TO-220 package allows field-replaceable heatsink integration; guaranteed R_th(ch-c) supports thermal predictability across ambient ranges.
Telecom Rectifiers	Renewable Energy Inverters
Use Scenario: Front-end PFC and isolation stage switching in -48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC and main switch in phase-shifted full-bridge DC-DC stage. Use Value: Low Q_gd/Q_g ratio (41/86 nC) improves efficiency at light load; dv/dt immunity prevents shoot-through in high-speed bridges.	Use Scenario: DC link switching in string inverters for residential solar PV systems (600 V class). IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage handling bidirectional energy flow. Use Value: Avalanche rating supports fault clearing during grid fault events; 150 °C T_ch rating accommodates unventilated outdoor enclosures.

Server Power Supply Units

Industrial AC-DC Converters

Use Scenario: Primary-side switching in 1–3 kW redundant PSUs for data center rack servers.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch in active-clamp forward or LLC resonant topology.

Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and improve surge survivability in 230 VAC input systems.

Use Scenario: Main switch in programmable AC-DC power supplies for factory automation PLCs and HMIs.

IC Role / Device Role / Timing Role: Hard-switched primary-side MOSFET operating at 50–100 kHz with 400 V DC bus.

Use Value: TO-220 package allows field-replaceable heatsink integration; guaranteed R_th(ch-c) supports thermal predictability across ambient ranges.

Telecom Rectifiers

Renewable Energy Inverters

Use Scenario: Front-end PFC and isolation stage switching in -48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC and main switch in phase-shifted full-bridge DC-DC stage.

Use Value: Low Q_gd/Q_g ratio (41/86 nC) improves efficiency at light load; dv/dt immunity prevents shoot-through in high-speed bridges.

Use Scenario: DC link switching in string inverters for residential solar PV systems (600 V class).

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage handling bidirectional energy flow.

Use Value: Avalanche rating supports fault clearing during grid fault events; 150 °C T_ch rating accommodates unventilated outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP33N60DM6	R_DS(ON) = 0.075 Ω (typ.), Q_g = 72 nC, E_AS = 380 mJ - slightly lower gate charge but reduced avalanche margin.	Optimized for high-frequency PFC; less suited for hard-switched 100 kHz+ LLC due to lower E_AS.	Prefer when gate drive loss dominates system efficiency and avalanche stress is minimal.
IPP60R099C7	R_DS(ON) = 0.099 Ω (typ.), Q_g = 62 nC, TO-220FP package - lower profile but higher on-resistance and no heatsink tab connection.	Better for space-constrained PCB layouts; unsuitable where direct heatsink mounting is required.	Select when board height is constrained and thermal path is via PCB copper, not external heatsink.

Compared with STP33N60DM6 and IPP60R099C7, TK31E60W,S1VX provides superior avalanche ruggedness and direct heatsink thermal coupling - making it preferred for industrial SMPS where reliability under line transients and thermal cycling is critical.

Availability

TK31E60W,S1VX is available at Aetrix Electronics and suitable for server power supply units, industrial AC-DC converters, and telecom rectifiers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for TK31E60W,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK31E60W,S1VX belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current rating for TK31E60W,S1VX?

The TK31E60W,S1VX has a DC drain current rating of 30.8 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature - for example, it drops to approximately 15 A at T_c = 100 °C - and must be applied with appropriate heatsinking and derating per the Safe Operating Area curve in the TK31E60W,S1VX datasheet.

Does TK31E60W,S1VX have an integrated body diode, and what are its recovery characteristics?

Yes, the TK31E60W,S1VX includes a monolithic body diode with reverse recovery time t_rr = 410 ns (typ.) and reverse recovery charge Q_rr = 3.5 µC (typ.) at I_DR = 15.4 A. These values are measured under standardized conditions (dI_DR/dt = 50 A/µs, V_DD = 400 V) and support use in quasi-resonant and synchronous rectifier topologies where predictable diode behavior is essential.

What is the gate threshold voltage range for TK31E60W,S1VX, and how does it affect drive requirements?

The TK31E60W,S1VX has a gate threshold voltage V_th of 2.7–3.7 V (measured at V_DS = 10 V, I_D = 1.5 mA). This range ensures reliable turn-on with standard 5 V logic-level controllers and full enhancement with 10 V gate drive, while avoiding unintended conduction during power-up or noise transients - a key advantage in high-noise industrial environments.

Can TK31E60W,S1VX be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK31E60W,S1VX is fully rated for single-pulse avalanche operation with E_AS = 437 mJ (tested per JEDEC JESD24-11). This specification guarantees safe clamping of inductive energy during switching faults or overvoltage events without degradation, provided the channel temperature remains within 150 °C and the pulse duration complies with the SOA limits defined in the TK31E60W,S1VX datasheet.

What package type and pin configuration does TK31E60W,S1VX use?

The TK31E60W,S1VX uses a TO-220 package (Toshiba designation: 2-10X1A) with three terminals: Pin 1 = Gate, Pin 2 = Drain (connected to the metal tab/heatsink), and Pin 3 = Source. The drain-tab connection enables efficient thermal transfer to an external heatsink but requires electrical isolation if mounted to a grounded chassis.

TK31E60W,S1VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK31E60W,S1VX FAQ

1.How can I place an order for TK31E60W,S1VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31E60W,S1VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31E60W,S1VX reliable?

The price and inventory of TK31E60W,S1VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31E60W,S1VX is usually 5 days.

3.What payment methods are accepted for TK31E60W,S1VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31E60W,S1VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31E60W,S1VX?

TK31E60W,S1VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31E60W,S1VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31E60W,S1VX?

For technical support, including TK31E60W,S1VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31E60W,S1VX requirements.

6.How does Aetrix verify that TK31E60W,S1VX is sourced from the original manufacturer or authorized distributors?

All TK31E60W,S1VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31E60W,S1VX meets industry standards.

7.What is the process for return or replacement of TK31E60W,S1VX?

All TK31E60W,S1VX units undergo pre-shipment inspection (PSI). If there is an issue with TK31E60W,S1VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31E60W,S1VX part is unused and in its original packaging.

Return procedure for TK31E60W,S1VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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