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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW65N045M9-4

Name: STW65N045M9-4
Brand: STMicroelectronics
SKU: STW65N045M9-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW65N045M9-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW65N045M9-4.pdf

Description:: N-CHANNEL 650 V, 39 MOHM TYP., 5

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Product details

Overview

STW65N045M9-4 from STMicroelectronics is a 650 V, 45 mΩ (max), 54 A N-channel super-junction Power MOSFET in TO-247-4 package, featuring an extra driver source pin for reduced gate loop inductance and enhanced switching control. It delivers 80 nC total gate charge, 50 V/ns diode recovery dv/dt capability, and 100% avalanche tested ruggedness-optimized for high-efficiency PFC and resonant converters in industrial power supplies.

For engineers reviewing the STW65N045M9-4 datasheet, STW65N045M9-4 pinout, STW65N045M9-4 application, or STW65N045M9-4 equivalent, key selection criteria include R_DS(on) × Q_g FOM (1.8 µC·Ω), TO-247-4 4-pin layout with dedicated driver source, and 120 V/ns MOSFET dv/dt ruggedness under hard-switching conditions.

Technical Context

This MDmesh M9 silicon device uses multi-drain process architecture to achieve low on-resistance (39 mΩ typ.) and low output capacitance (C_oss = 76 pF) simultaneously. Its 4-pin TO-247-4 configuration separates power source and driver source terminals, minimizing source inductance-induced gate oscillation during fast turn-off.

The MOSFET supports unclamped inductive switching with 775 mJ single-pulse avalanche energy and exhibits stable R_DS(on) over temperature (±20% from −55 °C to 150 °C). Diode reverse recovery is characterized at 288 ns (T_J = 25 °C) and 400 ns (T_J = 150 °C), with Q_rr of 4–7.5 µC depending on junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in continuous operation with margin for transients in boost PFC stages.
R_DS(on) max	45 mΩ at V_GS = 10 V, I_D = 28 A - Enables <1.5 W conduction loss at 30 A, critical for thermal management in compact 3–5 kW designs.
Q_g	80 nC - Low gate charge reduces driver power demand and enables use of cost-effective 1–2 W gate drivers in high-frequency (>100 kHz) topologies.
dv/dt ruggedness	120 V/ns - Sustains fast voltage transitions without spurious turn-on in hard-switched LLC or phase-shifted full-bridge converters.
E_AS	775 mJ - Confirmed avalanche energy rating allows reliable operation during transient overvoltage events without external snubbers.
R_thJC	0.40 °C/W - Enables 312 W power dissipation at T_C = 25 °C; requires heatsink design targeting ≤45 °C case rise for 200 W continuous operation.
C_oss eq.	885 pF - Low effective output capacitance minimizes turn-off loss and improves ZVS initiation in resonant converters.

Pinout & Package

TO-247-4 package with isolated tab (Drain), standard Gate, dedicated Driver Source (pin 3), and Power Source (pin 2) - eliminates source inductance coupling between power and gate drive paths.

Pin/Terminal	Circuit Role	Design Meaning
1, TAB	Drain	High-voltage main current path; electrically connected to metal tab for direct heatsink mounting and low thermal resistance.
2	Power Source	Carries high-current return path from load; connects to main PCB ground plane or low-inductance source rail.
3	Driver Source	Reference node for gate driver IC; decoupled from power source to prevent gate ringing during di/dt transients.
4	Gate	Control input requiring 10 V drive; low R_g (1 Ω) enables fast edge rates with minimal external series resistance.

Key Features

Feature	Design Value
Extra driver source pin	Eliminates common-source inductance in gate loop, enabling clean 85 ns turn-off delay and 4 ns fall time without gate clamping.
MDmesh M9 super-junction structure	Delivers 39 mΩ R_DS(on) at 650 V - 22% lower on-resistance than prior-generation M6 devices in same package.
100% avalanche tested	Each unit validated for 6 A repetitive avalanche current and 775 mJ single-pulse energy - no derating required for surge-prone AC/DC inputs.
Low C_iss/C_oss ratio	4610 pF / 76 pF = 60.7 - high ratio supports efficient zero-voltage switching across wide load ranges in LLC resonant converters.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 40 A RMS motor current with <100 ns dead-time control.

Use Value: 120 V/ns dv/dt ruggedness prevents false triggering during fast IGBT/MOSFET commutation; 34 A current rating at 100 °C ensures thermal headroom at full load.

Use Scenario: Active clamp forward or asymmetrical half-bridge primary switch in 1–3 kW server power supplies meeting 80 PLUS Titanium efficiency.

IC Role / Device Role / Timing Role: Main power switch synchronized to 200–500 kHz controller with precise gate timing via isolated driver.

Use Value: 80 nC Q_g enables <1.2 W gate drive loss at 300 kHz; 0.40 °C/W R_thJC supports forced-air cooling without liquid solutions.

Home Appliance Inverters

EV Onboard Charger (OBC)

Use Scenario: Compressor inverter in high-end HVAC systems requiring silent operation and >97% efficiency at partial load.

IC Role / Device Role / Timing Role: PFC boost switch operating in continuous conduction mode (CCM) with 65 kHz fixed frequency.

Use Value: 45 mΩ R_DS(on) limits conduction loss to <1.8 W at 25 A; 50 V/ns diode dv/dt rating ensures robust recovery during light-load discontinuous modes.

Use Scenario: Primary-side switch in bidirectional CLLC resonant converter for 6.6 kW EV onboard chargers (OBC) with grid-to-battery and vehicle-to-grid (V2G) capability.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated unclamped inductive stress during soft-start and fault recovery.

Use Value: 775 mJ E_AS rating eliminates need for external avalanche protection; TO-247-4 mechanical robustness supports 15+ year field life under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage super-junction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH60N65X2	650 V, 52 mΩ (max), 60 A, TO-247-3; no driver source pin; Q_g = 92 nC	Lacks dedicated driver source; higher gate charge increases driver complexity and losses above 200 kHz	Select when cost sensitivity outweighs switching performance; requires careful gate loop layout to avoid oscillation
IPP65R45CFD7	650 V, 45 mΩ (max), 54 A, TO-247-4; driver source pin present; Q_g = 75 nC; C_oss = 95 pF	Slightly higher C_oss reduces ZVS range; identical pinout and thermal footprint	Prefer for ultra-high-frequency designs where lower Q_g offsets higher C_oss; validated in 700 kHz GaN-assisted hybrid topologies

Compared with IXTH60N65X2 and IPP65R45CFD7, STW65N045M9-4 offers the lowest R_DS(on) × Q_g FOM (1.8 µC·Ω) and highest dv/dt ruggedness (120 V/ns), making it optimal for high-density, high-reliability PFC and resonant converters where gate drive stability and avalanche margin are critical.

Availability

STW65N045M9-4 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW65N045M9-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M9 super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in 650 V applications demanding low conduction and switching losses.

FAQ

What is the purpose of the fourth pin (Driver Source) in STW65N045M9-4?

The fourth pin is a dedicated Driver Source terminal, physically separated from the Power Source (pin 2). It provides a low-inductance reference for the gate driver IC, eliminating voltage spikes induced by high di/dt in the main source path. This separation suppresses gate oscillation and enables reliable 10 V gate drive even at >300 A/µs current slew rates, as confirmed in ST's application note AN5092.

Does STW65N045M9-4 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.2–4.2 V and is fully specified for 0 V to 10 V gate drive. Negative gate bias is not required; however, a −5 V to 0 V turn-off swing may further improve noise immunity in high-dv/dt environments. ST's evaluation boards (e.g., STEVAL-IPFC17V1) operate successfully with 0 V turn-off.

How does the avalanche rating impact system-level reliability?

Each STW65N045M9-4 undergoes 100% production avalanche testing at 6 A and 775 mJ. This ensures guaranteed single-pulse survival during line surges, transformer saturation, or short-circuit events without degradation-eliminating the need for external clamping circuits in Class I industrial power supplies compliant with IEC 61000-4-5.

Can STW65N045M9-4 be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate resistors (≤1 Ω), identical PCB trace lengths (<2 mm difference), and shared thermal interface to a common heatsink. The device's positive R_DS(on) temperature coefficient (2.5× increase from −55 °C to 150 °C) enables inherent current sharing, as verified in ST's parallel operation guidelines (AN5127, Section 4.2).

STW65N045M9-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4610 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 312W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW65N045M9-4 FAQ

1.How can I place an order for STW65N045M9-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW65N045M9-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW65N045M9-4 reliable?

The price and inventory of STW65N045M9-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW65N045M9-4 is usually 5 days.

3.What payment methods are accepted for STW65N045M9-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW65N045M9-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW65N045M9-4?

STW65N045M9-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW65N045M9-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW65N045M9-4?

For technical support, including STW65N045M9-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW65N045M9-4 requirements.

6.How does Aetrix verify that STW65N045M9-4 is sourced from the original manufacturer or authorized distributors?

All STW65N045M9-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW65N045M9-4 meets industry standards.

7.What is the process for return or replacement of STW65N045M9-4?

All STW65N045M9-4 units undergo pre-shipment inspection (PSI). If there is an issue with STW65N045M9-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW65N045M9-4 part is unused and in its original packaging.

Return procedure for STW65N045M9-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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