Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TK18A50D(STA4,Q,M)

Part No.:
TK18A50D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK18A50D(STA4,Q,M).pdf
Description:
MOSFET N-CH 500V 18A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:46

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TK18A50D(STA4,Q,M) from Toshiba is an N-channel silicon power MOSFET in the π-MOSⅦ family, designed for high-efficiency switching regulator applications. It delivers 500 V drain-source breakdown voltage, 18 A continuous drain current, and a low RDS(ON) of 0.22 Ω (typ.) at VGS = 10 V, enabling compact, thermally efficient DC-DC converters in industrial power supplies.

For engineers reviewing the TK18A50D(STA4,Q,M) datasheet, TK18A50D(STA4,Q,M) pinout, TK18A50D(STA4,Q,M) application, or TK18A50D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (EAS = 533 mJ), gate charge (Qg = 45 nC), thermal resistance (Rth(ch-c) = 2.5 °C/W), and RoHS-compliant SC-67 package compatibility with TO-220AB footprints.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage switching with enhanced avalanche energy handling. Its π-MOSⅦ process enables stable enhancement-mode operation (Vth = 2.0–4.0 V) and low output capacitance (Coss = 280 pF at VDS = 25 V), supporting high-frequency PWM control in flyback and forward converters.

The device integrates a built-in body diode with reverse recovery time (trr) of 1700 ns and Qrr of 26 μC, suitable for non-synchronous rectification where controlled diode conduction is required. Thermal design is anchored to channel-to-case resistance of 2.5 °C/W, permitting 50 W dissipation at Tc = 25°C without derating.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - Supports input voltages up to 400 V DC in offline SMPS designs without derating.
RDS(ON)0.22 Ω (typ.) - Enables <1.8 W conduction loss at 9 A, reducing heatsink requirements.
ID (cont)18 A - Sustains full-load current in 300–500 W AC/DC adapters and industrial PSUs.
EAS533 mJ - Withstands single-pulse inductive switching stress (e.g., transformer leakage spikes) without failure.
Qg45 nC - Balances switching speed and gate drive loss; compatible with standard 1-A peak drivers.
Rth(ch-c)2.5 °C/W - Allows direct mounting to heatsinks; 50 W PD achievable with ≤125°C case temperature.
trr1700 ns - Limits diode reverse recovery loss in non-synchronous topologies with moderate dI/dt.

Pinout & Package

Package: SC-67 (JEITA), mechanically identical to TO-220AB, with isolated tab and 3-pin through-hole configuration. Weight: 1.7 g (typ.).

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives 2.0–4.0 V threshold signal; requires 10 V for full enhancement and minimal RDS(ON).
2 (Drain)High-side power nodeConnected to primary winding or bus rail; rated for 500 V and repetitive avalanche events.
3 (Source)Reference and return pathServes as common reference for gate drive and current sensing; tied to power ground in low-side switch configurations.

Key Features

FeatureDesign Value
Low RDS(ON)0.22 Ω typ. reduces conduction losses by >30% vs. legacy 500 V MOSFETs in same package.
High |Yfs|8.5 S typ. ensures strong transconductance for stable gain and fast turn-on response.
Avalanche-rated533 mJ single-pulse EAS eliminates need for external snubbers in hard-switched flyback designs.
Enhancement-mode Vth2.0–4.0 V range allows reliable gate drive with standard 5 V or 12 V controllers without risk of spurious turn-on.
RoHS-compliant marking[[G]]/RoHS [[Pb]] label confirms lead-free termination and compliance with EU Directive 2011/65/EU.

Applications

Industrial AC/DC Power SuppliesServer PSU Primary Switching

Use Scenario: 400 W open-frame power supply for PLC controllers operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback topology.

Use Value: 500 V VDSS and 533 mJ EAS ensure robustness against line surges and transformer leakage energy without auxiliary clamping.

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server PSU using active clamp forward converter.

IC Role / Device Role / Timing Role: High-side main switch handling 380 V DC bus with 100 kHz switching frequency.

Use Value: Low Qg (45 nC) and Ciss (2600 pF) minimize gate drive loss and enable efficient high-frequency operation.

Telecom Rectifier ModulesMotor Drive Inverter Stages

Use Scenario: 3 kW telecom rectifier converting -48 V DC backup to 380 V DC bus for distributed power architecture.

IC Role / Device Role / Timing Role: Boost PFC switch operating at 65 kHz with critical conduction mode (CrCM).

Use Value: 18 A ID rating and 2.5 °C/W Rth(ch-c) support sustained high-current boost operation with forced-air cooling.

Use Scenario: Half-bridge leg in 7.5 kW HVAC inverter driving permanent magnet synchronous motor (PMSM).

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter bridge with 15 kHz PWM.

Use Value: Body diode trr = 1700 ns and Qrr = 26 μC reduce commutation loss and EMI during freewheeling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP18NM50FP500 V VDSS, 18 A ID, RDS(ON) = 0.23 Ω, but uses SuperMESH™ process with higher Ciss (2900 pF) and no published EAS rating.Lacks guaranteed avalanche capability; unsuitable for unclamped inductive loads.Select TK18A50D(STA4,Q,M) when single-pulse avalanche immunity is required in cost-sensitive industrial designs.
IXTH18N50L2500 V VDSS, 18 A ID, RDS(ON) = 0.24 Ω, but features ultra-low Qgd/Qgs ratio (0.6) for reduced Miller-induced shoot-through risk.Better suited for high-speed half-bridge synchronous rectification where gate drive timing margin is critical.Choose IXTH18N50L2 only if layout constraints demand superior dv/dt immunity and gate drive robustness over avalanche ruggedness.

Compared with STP18NM50FP and IXTH18N50L2, TK18A50D(STA4,Q,M) uniquely combines certified 533 mJ avalanche energy, industry-standard SC-67 footprint, and 0.22 Ω RDS(ON), making it optimal for cost-driven, reliability-critical offline SMPS where surge resilience is non-negotiable.

Availability

TK18A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, telecom rectifier modules, and motor drive inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for TK18A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK18A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for efficiency-critical switching regulators in industrial, telecom, and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK18A50D(STA4,Q,M)?

The TK18A50D(STA4,Q,M) has a maximum continuous drain current (ID) of 18 A at Tc = 25°C. This rating assumes proper heatsinking to maintain channel temperature below 150°C. At elevated case temperatures, current must be linearly derated per the Safe Operating Area curve in the official Toshiba datasheet for TK18A50D(STA4,Q,M).

Does TK18A50D(STA4,Q,M) support avalanche operation, and what is its rated energy?

Yes, TK18A50D(STA4,Q,M) is fully rated for single-pulse avalanche operation with EAS = 533 mJ under specified test conditions (VDD = 90 V, L = 2.8 mH, IAR = 18 A). This makes TK18A50D(STA4,Q,M) suitable for unclamped inductive switching applications such as flyback converters without external snubbers.

What is the gate threshold voltage range for TK18A50D(STA4,Q,M), and how does it affect drive requirements?

The gate threshold voltage (Vth) for TK18A50D(STA4,Q,M) is specified from 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 5 V or 12 V gate drivers while preventing accidental activation from noise-critical for stable operation of TK18A50D(STA4,Q,M) in noisy industrial environments.

Is TK18A50D(STA4,Q,M) RoHS compliant, and how is compliance indicated on the device?

Yes, TK18A50D(STA4,Q,M) is RoHS compliant, as confirmed by Toshiba's marking convention: "[[G]]/RoHS [[Pb]]" appears on the device surface. This indicates lead-free termination and compliance with EU Directive 2011/65/EU. Full compliance documentation is available in Toshiba's environmental reports for TK18A50D(STA4,Q,M).

What package type does TK18A50D(STA4,Q,M) use, and is it compatible with TO-220AB footprints?

TK18A50D(STA4,Q,M) uses the SC-67 package (JEITA designation), which is mechanically identical to TO-220AB-including pin spacing, outline, and mounting hole positions. This allows direct drop-in replacement in existing TO-220AB layouts without PCB modification, simplifying design migration to TK18A50D(STA4,Q,M).

TK18A50D(STA4,Q,M) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
π-MOSVII
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
270mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK18A50D(STA4,Q,M) FAQ

1.How can I place an order for TK18A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK18A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK18A50D(STA4,Q,M) reliable?

The price and inventory of TK18A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK18A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK18A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK18A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK18A50D(STA4,Q,M)?

TK18A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK18A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK18A50D(STA4,Q,M)?

For technical support, including TK18A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK18A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK18A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK18A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK18A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK18A50D(STA4,Q,M)?

All TK18A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK18A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK18A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK18A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TK18A50D(STA4,Q,M) Tags

  • TK18A50D(STA4,Q,M)
  • TK18A50D(STA4,Q,M) PDF
  • TK18A50D(STA4,Q,M) Datasheet
  • TK18A50D(STA4,Q,M) Specifications
  • TK18A50D(STA4,Q,M) Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TK18A50D(STA4,Q,M)
  • Buy TK18A50D(STA4,Q,M)
  • TK18A50D(STA4,Q,M) Price
  • TK18A50D(STA4,Q,M) Distributor
  • TK18A50D(STA4,Q,M) Supplier
  • TK18A50D(STA4,Q,M) Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER