Infineon Technologies IPP339N20NM6AKSA1

Overview

IPP339N20NM6AKSA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 200 V drain-source voltage, 33.9 mΩ max R_DS(on) at V_GS = 10 V and I_D = 26 A, 39 A continuous drain current, and 104 mJ single-pulse avalanche energy. It serves as a high-efficiency main switch in industrial DC-DC converters and motor drives operating up to 175 °C.

For engineers reviewing the IPP339N20NM6AKSA1 datasheet, IPP339N20NM6AKSA1 pinout, IPP339N20NM6AKSA1 application, or IPP339N20NM6AKSA1 equivalent, key selection criteria include its 15.9 nC total gate charge, 48 nC output charge (Q_oss), low reverse recovery charge (Q_rr = 75–150 nC at 100 A/μs), and 100% avalanche-tested ruggedness for hard-switching power stages.

Technical Context

This OptiMOS™ 6 device uses trench-gate superjunction technology optimized for high-voltage switching efficiency. Its 200 V rating supports 48 V and 60 V bus systems, while the 33.9 mΩ R_DS(on) and 15.9 nC Q_g yield a figure-of-merit (Q_g × R_DS(on)) of 0.54 nC·Ω - enabling reduced conduction and switching losses in synchronous rectification and half-bridge topologies.

The MOSFET integrates a fast, low-Q_rr body diode (t_rr = 63 ns, Q_rr = 75 nC at 100 A/μs) and supports gate drive with V_GS(th) = 3.0–4.5 V and plateau voltage of 6.9 V. Thermal resistance R_thJC is 0.6–1.2 °C/W, enabling 125 W power dissipation at T_C = 25 °C on standard FR4 PCBs.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant). Tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP36NF20 and IRFP4668PBF, IPP339N20NM6AKSA1 delivers superior trade-off between conduction loss (33.9 mΩ), switching efficiency (15.9 nC Q_g, 48 nC Q_oss), and system ruggedness (104 mJ E_{AS, 100% avalanche tested), making it optimal for compact, high-reliability 200 V industrial power stages.}

Availability

IPP339N20NM6AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, solar DC optimizers, and EV onboard charger stages requiring stable component supply and long-term lifecycle support.

Supply support for IPP339N20NM6AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 6 family - engineered specifically for high-efficiency, high-reliability 100–250 V power conversion in industrial automation, renewable energy, and e-mobility systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to 175 °C junction temperature. With R_thJC = 0.6–1.2 °C/W, sustained case temperatures above 125 °C require derating per Figure 2 in the datasheet. At T_C = 100 °C, I_D must be limited to ~28 A to maintain T_j ≤ 175 °C under typical PCB cooling conditions.

Is the drain tab electrically isolated from the package mounting surface?

No - the drain tab in the PG-TO220-3 package is electrically connected to the Drain terminal (Pin 2/Tab) and must be insulated from the heatsink using a dielectric pad or mica washer unless the heatsink is referenced to the drain potential. This is confirmed in the "Drain Pin 2, Tab" note and package outline diagram.

Does this MOSFET support gate drive with 5 V logic-level controllers?

No - V_GS(th) is 3.0–4.5 V, but full enhancement requires ≥10 V gate drive to achieve the specified 33.9 mΩ R_DS(on). At 5 V, R_DS(on) rises sharply (>120 mΩ), increasing conduction loss significantly. A dedicated 10–15 V gate driver is required for rated performance.

How is the 100% avalanche testing performed per JEDEC JESD22-A115?

Each unit undergoes single-pulse unclamped inductive switching (UIS) stress at I_AS = 16 A and L = 25 Ω, producing E_AS = 104 mJ - matching the datasheet's maximum rating. Post-test electrical parameters (V_BR, R_DS(on), I_DSS) are verified within spec limits, ensuring functional integrity after stress.