Toshiba Semiconductor and Storage TK10A80W,S4X

Overview

TK10A80W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and industrial SMPS. It delivers 800 V V_DSS, 9.5 A I_D (DC), R_DS(ON) = 0.46 Ω (typ.) at V_GS = 10 V, and operates up to 150 °C channel temperature - enabling compact, efficient 30–100 W flyback and PFC stages.

For engineers reviewing the TK10A80W datasheet, TK10A80W pinout, TK10A80W application, or TK10A80W equivalent, this page provides verified electrical specs, TO-220SIS package layout, gate charge (Q_g = 19 nC), avalanche ruggedness (E_AS = 332 mJ), and diode recovery characteristics (t_rr = 300 ns) critical for hard-switched converter design and thermal reliability assessment.

Technical Context

The TK10A80W implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching and robust dv/dt immunity (≥50 V/ns). Its enhancement-mode threshold (V_th = 3.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.

Designed for unidirectional high-side or low-side switching, it integrates an intrinsic body diode with V_DSF = −1.7 V (max) and Q_rr = 3.2 µC (typ.), supporting quasi-resonant and discontinuous conduction mode operation without external snubbers in many applications.

Key Specifications

Pinout & Package

TK10A80W is housed in a TO-220SIS (JEITA SC-67) package with isolated drain tab - enabling direct mounting to heatsink without insulating washer. The plastic body provides 2000 V_RMS isolation between drain and source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP10NK80ZFP and FQP8N80C, the TK10A80W delivers superior conduction efficiency, higher single-pulse avalanche energy, and tighter V_th distribution - making it the preferred choice for thermally constrained, safety-certified 45–100 W offline SMPS where reliability and regulatory compliance are mandatory.

Availability

TK10A80W is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and telecom wall adapters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK10A80W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET technology.

The TK10A80W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies targeting industrial, lighting, and consumer power applications.

FAQ

What is the maximum continuous drain current rating for TK10A80W at 100°C case temperature?

The TK10A80W has a DC drain current rating of 9.5 A at T_c = 25 °C. At T_c = 100 °C, derating applies: using R_th(ch-c) = 3.12 °C/W and T_ch(max) = 150 °C, the allowable I_D drops to approximately 5.3 A. Always verify thermal design with actual PCB layout and heatsink performance before finalizing.

Does TK10A80W support gate drive from a 5 V microcontroller?

No - the TK10A80W is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(ON) = 0.46 Ω. Driving TK10A80W directly from a 5 V MCU will result in high conduction loss and thermal runaway; a gate driver (e.g., TC4420) or level-shifting circuit is mandatory.

Is TK10A80W RoHS compliant and lead-free?

Yes - per Toshiba's marking note (Document Rev. 8.0.B), underlined lot numbers indicate [[G]]/RoHS COMPATIBLE status. TK10A80W meets Directive 2011/65/EU and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. Full compliance documentation is available upon request from Aetrix Electronics.

Can TK10A80W replace older TK10A80 in existing designs?

Yes - TK10A80W is a direct replacement for TK10A80 with identical pinout, package (TO-220SIS), and absolute maximum ratings. Key improvements include lower R_DS(ON) (0.46 Ω vs. 0.55 Ω typ.), higher E_AS (332 mJ vs. 290 mJ), and enhanced dv/dt ruggedness - resulting in better efficiency and reliability without layout changes.

What is the recommended gate resistor value for TK10A80W in a 100 kHz flyback converter?

For stable switching and EMI control in a 100 kHz flyback, a gate resistor of 15–22 Ω is recommended for TK10A80W. This value balances turn-on/turn-off times (t_r/t_f ≈ 35/10 ns), minimizes gate oscillation, and limits peak gate current to <0.7 A when driven from a 12 V source - ensuring compatibility with standard PWM IC outputs.