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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R020M1TXKSA1

Name: AIMZHN120R020M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R020M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZHN120R020M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R020M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZHN120R020M1TXKSA1 from Infineon is a 1200 V, 100 A SiC trench MOSFET in PG-TO247-4-U05 package with Kelvin source sensing, optimized for high-efficiency HV DC/DC converters and on-board chargers. It delivers R_DS(on) = 19 mΩ at 25°C (V_GS = 20 V), 1.5 µs short-circuit withstand time, and Crss/Ciss ratio < 0.3% to prevent parasitic turn-on under high dv/dt.

For engineers reviewing the AIMZHN120R020M1TXKSA1 datasheet, AIMZHN120R020M1TXKSA1 pinout, AIMZHN120R020M1TXKSA1 application, or AIMZHN120R020M1TXKSA1 equivalent, key selection criteria include gate drive voltage compatibility (20 V recommended), thermal resistance (R_th(j-c) = 0.27 K/W), and unipolar gate driving capability enabled by high V_GS(th) and low Crss.

Technical Context

This Gen1p CoolSiC™ device uses trench-gate SiC technology with .XT die attach for enhanced thermal performance and a dedicated Kelvin source terminal to eliminate source inductance effects during switching. Its gate threshold voltage (3.7–5.1 V) and ultra-low Crss (7 pF) enable robust immunity to Miller-induced false turn-on in high-frequency, high-voltage topologies.

The MOSFET supports unipolar 0 V/20 V gate drive, eliminating negative bias requirements. Its total gate charge (82 nC) and low Coss (126 pF) reduce driver losses and enable >100 kHz operation in isolated bidirectional DC/DC stages while maintaining low E_on + E_off = 389 µJ at 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Supports 800 V bus systems with ≥50% voltage margin for transient overvoltage handling in automotive traction inverters and EV charging.
R_DS(on)	19 mΩ @ 25°C - Enables <1.5 W conduction loss at 100 A, critical for high-power density OBC and auxiliary DC/DC designs.
I_DDC	100 A @ T_C = 25°C - Sustains full rated current with minimal heatsink volume when mounted on copper baseplates.
Q_G(tot)	82 nC - Reduces gate driver power consumption and allows use of lower-cost 2-A peak drivers in 10–50 kW systems.
E_tot	389 µJ @ 25°C - Lowers switching losses by >35% vs. comparable Si IGBTs, enabling air-cooled 3.3 kW/kW power density in onboard chargers.
t_SC	1.5 µs @ V_GS = 20 V - Provides deterministic fault-clearing window for digital protection circuits without external desaturation detection.
R_th(j-c)	0.27 K/W - Delivers junction-to-case thermal path equivalent to discrete SiC modules, supporting direct baseplate mounting in harsh environments.

Pinout & Package

PG-TO247-4-U05 package with isolated Kelvin source terminal for accurate gate control and minimized source loop inductance. Four-terminal layout enables precise R_DS(on) measurement and stable high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main power drain connection	High-current path for main switching node; electrically tied to metal tab for thermal conduction.
2 – Source	Main power source return	Carries full load current; must be routed with low-inductance layout to minimize voltage spikes during turn-off.
3 – Kelvin Sense	Source reference for gate driver	Provides gate driver with clean source potential, decoupling gate loop from power loop to suppress Miller coupling.
4 – Gate	Control input	Receives 20 V turn-on signal; requires low-impedance gate resistor (2 Ω typical) to control dV/dt and EMI.

Key Features

Feature	Design Value
Kelvin source sensing	Eliminates source inductance impact on gate control, enabling stable 100+ kHz switching without oscillation or false turn-on.
Gen1p chip technology	Improves R_DS(on) × Q_G figure-of-merit by 22% vs. prior generation, reducing combined conduction + switching losses.
Crss/Ciss ratio < 0.3%	Prevents parasitic turn-on under dv/dt > 50 V/ns, allowing unipolar 0 V/20 V gate drive without negative bias circuitry.
.XT die attach	Reduces thermal resistance by 18% vs. standard solder die attach, improving long-term reliability under thermal cycling.
AEC-Q101 qualification	Validated for automotive-grade temperature cycling (-55°C to 175°C), vibration, and humidity testing per ISO/TS 16949.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW OBC in BEV platforms converting AC grid to 400/800 V battery with PFC + CLLC stages.

IC Role / Device Role / Timing Role: Primary-side high-side switch in CLLC resonant converter operating at 100–300 kHz.

Use Value: 389 µJ total switching energy enables >97% peak efficiency and eliminates liquid cooling in compact under-hood installations.

Use Scenario: 3.3 kW isolated DC/DC stage stepping down 800 V battery to 12 V/48 V auxiliary supply in commercial EVs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in phase-shifted full-bridge topology with ZVS turn-on.

Use Value: 19 mΩ R_DS(on) and 0.27 K/W R_th(j-c) sustain 100 A continuous current with <75°C junction rise on passive heatsinks.

Auxiliary Traction Inverter

Industrial HV Rectifier Stack

Use Scenario: 25 kW auxiliary inverter powering HVAC compressors and steering pumps in autonomous shuttle buses.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg with active short-circuit protection.

Use Value: 1.5 µs short-circuit withstand time enables deterministic hardware-level fault response without software intervention.

Use Scenario: 1500 V industrial rectifier module for medium-voltage motor drives and renewable energy inverters.

IC Role / Device Role / Timing Role: Series-connected blocking element in multi-level diode-clamped topology.

Use Value: 7.07 mm minimum creepage distance meets IEC 61800-5-1 reinforced insulation requirements for 1200 V systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXTH120N10S1	1000 V rating, higher R_DS(on) (22 mΩ), no Kelvin source, TO-247-3L package	Limited to 650–800 V systems; requires negative gate bias for reliable dv/dt immunity	Select only if system voltage ≤ 800 V and cost sensitivity outweighs efficiency gains.
Wolfspeed C3M0065120K	Same 1200 V/100 A rating, identical 4-pin TO247 package, but R_DS(on) = 65 mΩ (typ.)	Higher conduction loss limits use to <50 A average current; better suited for soft-switched topologies	Prefer for lower-frequency (<50 kHz), high-reliability industrial UPS where gate drive simplicity is prioritized.

Compared with IXTH120N10S1 and C3M0065120K, AIMZHN120R020M1TXKSA1 offers the lowest R_DS(on) × Q_G FOM and integrated Kelvin sensing-enabling higher power density and simpler gate drive in automotive OBC and DC/DC converters requiring AEC-Q101 compliance.

Availability

AIMZHN120R020M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary traction inverters requiring stable component supply across automotive production lifecycles.

Supply support for AIMZHN120R020M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ Gen1p high-voltage MOSFET product line, engineered specifically for automotive-grade 800 V battery systems and high-efficiency bidirectional power conversion in electrified transportation.

FAQ

What gate drive voltage is required for reliable operation?

The AIMZHN120R020M1TXKSA1 requires a nominal +20 V turn-on voltage and 0 V turn-off voltage. This unipolar drive scheme is enabled by its high V_GS(th) (3.7–5.1 V) and ultra-low Crss (7 pF), eliminating need for negative bias while ensuring immunity to parasitic turn-on under high dv/dt conditions up to 100 V/ns.

Does this MOSFET include an integrated body diode, and what is its reverse recovery behavior?

Yes, it features a co-packaged SiC body diode with V_SD = 3.9 V at 43 A and 25°C. Its forward recovery charge Q_fr is 260 nC at 25°C, and exhibits negligible reverse recovery current-enabling zero-current switching in resonant topologies without snubbers or additional diodes.

How is thermal performance validated, and what is the maximum allowable case temperature?

Thermal resistance R_th(j-c) is characterized at 0.27 K/W (typ.) and verified across -55°C to 175°C junction range. The device supports continuous operation up to T_C = 100°C, delivering 71 A DC current at that condition-validated per AEC-Q101 thermal cycling and steady-state power dissipation tests.

Is Kelvin source connection mandatory, and how should it be implemented?

Yes-the Kelvin source terminal (Pin 3) must be connected directly to the gate driver's source reference, separate from the main source (Pin 2). This decouples gate loop inductance from power loop, preventing voltage overshoot and ensuring stable 20 V gate control during fast switching transitions above 50 V/ns.

AIMZHN120R020M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 43A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 13.7mA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 2667 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 429W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R020M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R020M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R020M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R020M1TXKSA1 reliable?

The price and inventory of AIMZHN120R020M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R020M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R020M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R020M1TXKSA1 transactions.

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4.How is shipping managed for AIMZHN120R020M1TXKSA1?

AIMZHN120R020M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R020M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R020M1TXKSA1?

For technical support, including AIMZHN120R020M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R020M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R020M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R020M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R020M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R020M1TXKSA1?

All AIMZHN120R020M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R020M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R020M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R020M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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