FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMWSH120H28SM4SIC MOSFET BVDSS: >1000V TO247-4 |
3,947 | 0.00 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 173.7 nC @ 15 V | +19V, -8V | 3944 pF @ 1000 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
DIW120SIC028SIC MOSFET, TO-247-3L, N, 118A, |
8,239 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
DIF120SIC022SIC MOSFET, TO-247-4L, N, 120A, |
3,354 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
DIF120SIC028SIC MOSFET, TO-247-4L, N, 118A, |
6,054 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
DIW065SIC015SIC MOSFET, TO-247-3L, N, 150A, |
2,208 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 15mOhm @ 75A, 18V | 4V @ 15mA | 236 nC @ 20 V | +15V, -4V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
DIF065SIC020SIC MOSFET, TO-247-4L, N, 150A, |
6,880 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 20mOhm @ 75A, 18V | 4V @ 22mA | 236 nC @ 20 V | +18V, -5V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
DMWSH120H28SM3QSIC MOSFET BVDSS: >1000V TO247 T |
9,774 | 0.00 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 97.4A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 175 nC @ 15 V | +19V, -8V | 3905 pF @ 1000 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
IMBG65R009M1HXTMA1SILICON CARBIDE MOSFET |
2,232 | 0.00 |
|
Datasheet |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 170A (Tc) | 18V | 13.6mOhm @ 97.2A, 18V | 5.7V @ 32.4mA | 176 nC @ 18 V | +23V, -5V | 6054 pF @ 400 V | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
IXTN400N20X4Ultra Junction X4-Class Power |
3,838 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4.5V @ 250µA | 348 nC @ 10 V | ±20V | 27700 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B - miniBLOC |
|
C3M0032120J1-TRSIC, MOSFET, 32M, 1200V, TO-263- |
2,493 | 0.00 |
|
Datasheet |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 41.4A, 15V | 3.6V @ 11.5mA | 111 nC @ 15 V | +15V, -4V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IXTN500N20X4Ultra Junction X4-Class Power |
6,952 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 500A (Tc) | 10V | 1.99mOhm @ 100A, 10V | 4.5V @ 250µA | 535 nC @ 10 V | ±20V | 41500 pF @ 25 V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B - miniBLOC |
|
IXFN75N120SKSIC AND MULTICHIP DISCRETE |
9,282 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 27mOhm @ 50A, 15V | 3.6V @ 18mA | 158 nC @ 15 V | +15V, -4V | 4820 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
NVXK2VR40WDT2APM32 SIC POWER MODULE |
7,553 | 0.00 |
|
Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FF2000XTR17IE5BPSA1PP IHM I |
1 | 0.00 |
|
Datasheet |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DD1600S33HE4BPSA1IHV IHM T |
7,920 | 0.00 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MMFTP3008AKMOSFET SOT-23 P -30V -0.23A |
6,941 | 0.00 |
|
Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 230mA (Ta) | 2.5V, 4.5V | 4.1Ohm @ 200mA, 4.5V | 1.6V @ 250µA | 0.55 nC @ 4.5 V | ±8V | 31 pF @ 15 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
SI01N03K-TPN-CHANNEL MOSFET,SOT-23 |
8,947 | 0.00 |
|
Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 800mA (Ta) | 2.5V, 4.5V | 510mOhm @ 500mA, 4.5V | 1.3V @ 250µA | 640 pC @ 4.5 V | ±12V | 34.6 pF @ 15 V | - | 1W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
SI01P02K-TPP-CHANNEL MOSFET, SOT-23 |
5,913 | 0.00 |
|
- |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 700mA (Ta) | 1.8V, 4.5V | 700mOhm @ 500mA, 4.5V | 1V @ 250µA | 1.24 nC @ 4.5 V | ±8V | 60 pF @ 10 V | - | 1W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
SI3139KAL-TPP-CHANNEL MOSFET,SOT-723 |
8,726 | 0.00 |
|
- |
- | SOT-723 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 660mA (Ta) | 1.8V, 4.5V | 450mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 1.4 nC @ 4.5 V | ±10V | 63 pF @ 10 V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-723 |
|
MC3541-TPInterface |
7,889 | 0.00 |
|
Datasheet |
- | SOT-723 | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA | 2.5V, 4V | 8Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13 pF @ 5 V | - | 150mW | -55°C ~ 150°C | - | - | Surface Mount | SOT-723 |
