Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies	2,932	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	32.8A (Tc)	15V, 20V	55mOhm @ 15.4A, 20V	5.6V @ 3.1mA	19 nC @ 18 V	+23V, -7V	669 pF @ 400 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
IPZA60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-4-3 Infineon Technologies	8,983	RFQ	Datasheet	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	45mOhm @ 22.5A, 10V	4V @ 1.08mA	90 nC @ 10 V	±20V	3891 pF @ 400 V	-	201W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4-3
PSMN1R0-100ASEJ PSMN1R0-100ASE/SOT8000A/CCPAK1 Nexperia USA Inc.	2,119	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	430A (Tc)	10V	1.04mOhm @ 25A, 10V	3.6V @ 1mA	509 nC @ 10 V	±20V	36460 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
PSMN1R0-80CSEJ PSMN1R0-80CSE/SOT8005A/CCPAK12 Nexperia USA Inc.	5,647	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	495A (Tc)	10V	0.95Ohm @ 25A, 10V	3.6V @ 1mA	504 nC @ 10 V	±20V	36802 pF @ 40 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
GS61008P-MR GS61008P-MR Infineon Technologies Canada Inc.	3,880	RFQ	-	-	5-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	2.6V @ 7mA	8 nC @ 6 V	+7V, -10V	600 pF @ 50 V	-	-	-55°C ~ 150°C	-	-	Surface Mount	-
IMW65R040M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	8	RFQ	Datasheet	CoolSiC™ Gen 2	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V, 20V	36mOhm @ 22.9A, 20V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
AIMZH120R120M1TXKSA1 SIC_DISCRETE Infineon Technologies	20	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V, 20V	150mOhm @ 7A, 20V	5.1V @ 2.2mA	18 nC @ 20 V	+23V, -5V	458 pF @ 800 V	-	133W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-11
IPT025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	8,457	RFQ	Datasheet	OptiMOS™ 6	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 263A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-1
IPTG025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	4,646	RFQ	Datasheet	OptiMOS™ 6	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 264A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8-1
PSMN1R0-100ASFJ PSMN1R0-100ASF/SOT8000A/CCPAK1 Nexperia USA Inc.	3,861	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	460A (Tc)	10V	0.99mOhm @ 25A, 10V	4V @ 1mA	539 nC @ 10 V	±20V	33624 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	25	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
E3M0160120D SIC, MOSFET, 160M, 1200V, TO-247 Wolfspeed, Inc.	3,369	RFQ	Datasheet	E Series	TO-247-3	Tray	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	33 nC @ 15 V	-8V, +19V	730 pF @ 1000 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
IPTC025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	3,259	RFQ	Datasheet	OptiMOS™ 6	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 264A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-2
IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies	4,190	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	38A (Tc)	15V, 18V	53mOhm @ 13A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	+23V, -7V	1010 pF @ 800 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
CCSPG1510N TR PBFREE SURFACE MOUNT MOSFET Central Semiconductor Corp	9,174	RFQ	Datasheet	-	25-PowerVFQFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	150 V	100A (Tj)	5V	3.9mOhm @ 30A, 5V	2.1V @ 12mA	20 nC @ 5 V	+6V, -4V	2200 pF @ 75 V	-	200mW (Ta)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	25-CSP (4x6)
IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Infineon Technologies	7,300	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	31A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	102W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
IGOT65R055D2AUMA1 IGOT65R055D2AUMA1 Infineon Technologies	6,977	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	28A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
AIMBG120R160M1XTMA1 SIC_DISCRETE Infineon Technologies	2,986	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V, 20V	200mOhm @ 5A, 20V	5.1V @ 1.6mA	14 nC @ 20 V	+23V, -5V	350 pF @ 800 V	-	106W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
G3R60MT07J-TR 650V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor	8,000	RFQ	Datasheet	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	44A (Tc)	15V	-	-	-	-	-	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
MXP120A080FL-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	5,041	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

Total 72644 Record«Prev 1... 836 837 838 839840841 842 843...3633 Next»

PRODUCT

PHONE

USER