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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZH120R120M1TXKSA1

Name: AIMZH120R120M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZH120R120M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZH120R120M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZH120R120M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZH120R120M1TXKSA1 from Infineon is a 1200 V, 22 A (T_C = 25 °C) SiC trench MOSFET with Kelvin source pin, R_DS(on) = 117–150 mΩ at 25 °C and V_GS(on) = 20 V, qualified per AEC-Q101 for automotive on-board chargers and DC/DC converters operating up to 175 °C junction temperature.

For engineers reviewing the AIMZH120R120M1TXKSA1 datasheet, AIMZH120R120M1TXKSA1 pinout, AIMZH120R120M1TXKSA1 application, or AIMZH120R120M1TXKSA1 equivalent, key selection criteria include its 1.5 µs short-circuit withstand time at 20 V gate drive, Crss/Ciss ratio < 0.002, 7.07 mm minimum creepage distance, and low E_on/E_off (44 µJ / 36 µJ at 25 °C) enabling high-frequency, high-efficiency HV power conversion.

Technical Context

This CoolSiC™ Gen1p device uses trench-gate SiC technology with .XT die attach and a dedicated Kelvin source terminal to decouple power and sensing paths-enabling precise gate control and minimizing dynamic R_DS(on) rise during switching. Its high V_GS(th) (3.7–5.1 V) and ultra-low Crss (1 pF) suppress parasitic turn-on under high dv/dt.

The MOSFET delivers best-in-class switching energy (80 µJ total at 25 °C, 800 V, 7 A), supported by low C_iss (458 pF), C_oss (25 pF), and Q_Gtot (18 nC), allowing operation beyond 100 kHz while maintaining thermal stability via R_th(j–c) = 0.87 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 800 V DC-link systems with 1.5× safety margin for automotive traction and industrial HV DC/DC.
R_DS(on)	117–150 mΩ @ 25 °C, V_GS = 20 V - enables low conduction loss in 10–25 kW OBC stages with minimal heatsink requirement.
Q_Gtot	18 nC - reduces gate driver power consumption and allows use of compact, cost-effective 2 W drivers.
E_on/E_off	44 µJ / 36 µJ @ 25 °C - lowers switching losses by >30% vs. comparable Si IGBTs, enabling higher frequency and smaller magnetics.
t_SC	1.5 µs @ V_GS = 20 V - provides robust fault handling in unidirectional OBC boost stages without external desat detection.
C_rss/C_iss	1 pF / 458 pF - ratio < 0.002 ensures immunity to Miller-induced false turn-on in high dv/dt bridge configurations.
R_th(j–c)	0.87 K/W - enables 133 W power dissipation at T_C = 25 °C, supporting high-power density packaging in TO-247-4.

Pinout & Package

Package: PG-TO247-4-U03 - 4-pin through-hole package with isolated Kelvin source terminal for accurate gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power path	Connected to HV DC bus; carries full load current and withstands 1200 V blocking.
2 – Source	Power return path	Carries main current to ground/power rail; routed separately from Kelvin source to avoid voltage drop interference.
3 – Kelvin Sense Contact	Gate reference feedback	Provides low-inductance, low-noise source reference to gate driver, eliminating source inductance impact on switching timing and stability.
4 – Gate	Control input	Receives 20 V turn-on signal; designed for unipolar drive with no negative bias required due to high V_GS(th) and low Crss.

Key Features

Feature	Design Value
Gen1p SiC trench technology	Optimized R_DS(on) × Q_G figure-of-merit improves efficiency in 50–200 kHz OBC and DC/DC topologies.
Kelvin source pin	Enables stable, fast switching with <7 ns turn-on delay and <17 ns fall time, even under high di/dt (>1000 A/µs).
20 V recommended V_GS(on)	Reduces R_DS(on) by ~15% vs. 18 V drive and eliminates need for negative gate biasing circuitry.
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress in on-board charger environments.
7.07 mm minimum creepage	Fulfills reinforced insulation requirements for 1000 V AC safety standards (IEC 60664-1) in HV auxiliary drives.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW OBC using dual active bridge (DAB) topology with 800 V battery interface.

IC Role / Device Role / Timing Role: High-side switch in primary-side LLC resonant half-bridge, operating at 150–200 kHz with ZVS.

Use Value: Low E_tot (80 µJ) and 1.5 µs t_SC enable reliable soft-switching and fault containment without added protection circuitry.

Use Scenario: 3.3 kW isolated DC/DC stage stepping down 800 V battery to 48 V for vehicle domain controllers.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge, driven with 20 V gate voltage.

Use Value: Kelvin source pin maintains tight gate control under 500 A/µs di/dt, preventing shoot-through during hard commutation.

Auxiliary Power Supply

Traction Inverter Auxiliary Stage

Use Scenario: 1.5 kW isolated flyback supplying 12 V for ADAS ECUs from 400 V main bus.

IC Role / Device Role / Timing Role: Primary-side switch in high-frequency flyback, leveraging low C_oss (25 pF) for reduced capacitive loss.

Use Value: 0.87 K/W R_th(j–c) allows direct mounting to chassis with no additional heatsink, reducing BOM count.

Use Scenario: 500 W auxiliary supply powering gate drivers and sensors within 800 V traction inverter housing.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter, operating at 300 kHz with unipolar 20 V drive.

Use Value: High V_GS(th) (4.4 V typ.) and Crss/Ciss ratio < 0.002 prevent false turn-on during 10 kV/µs inverter switching noise exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0120100K	R_DS(on) = 120 mΩ (typ.), Q_G = 22 nC, no Kelvin source, TO247-3L package	Lacks Kelvin sense; requires careful layout to mitigate source inductance-induced oscillation in DAB OBCs	Prefer when cost sensitivity outweighs need for highest switching fidelity in lower-power (<6 kW) OBCs
ROHM SCT3120ALHRL	R_DS(on) = 128 mΩ (typ.), t_SC = 1.2 µs, V_GS(th) = 5.5 V (min), TO247-4L	Higher V_GS(th) improves noise immunity but limits gate drive flexibility; lower t_SC reduces fault margin	Prefer where system-level overvoltage protection is already implemented and layout constraints limit Kelvin routing

Compared with C3M0120100K and SCT3120ALHRL, AIMZH120R120M1TXKSA1 uniquely combines Kelvin source, 1.5 µs short-circuit rating, and sub-2 pF Crss to deliver superior switching robustness and layout tolerance in automotive HV power stages requiring AEC-Q101 compliance.

Availability

AIMZH120R120M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary power supplies requiring stable component supply across automotive production lifecycles.

Supply support for AIMZH120R120M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ family of silicon carbide MOSFETs, engineered specifically for high-efficiency, high-reliability 750–1200 V automotive and industrial power conversion systems.

FAQ

What gate drive voltage is required for optimal performance?

AIMZH120R120M1TXKSA1 is characterized for 20 V turn-on and 0 V turn-off. Using 20 V minimizes R_DS(on) and maximizes short-circuit withstand time (1.5 µs). Driving at 18 V increases R_DS(on) by ~8% and extends t_SC to 2 µs, but 20 V is recommended per Infineon's AN2018-09 for long-term reliability and thermal stability.

Does this MOSFET require negative gate voltage for turn-off?

No. The device features a high V_GS(th) (3.7–5.1 V) and ultra-low Crss (1 pF), enabling robust unipolar gate driving with 0 V turn-off. Negative bias is not required and is not recommended-Infineon specifies V_GS(off) = 0 V in Table 3 of the datasheet to avoid gate oxide stress.

How does the Kelvin source pin improve switching behavior?

The Kelvin source pin provides a dedicated low-inductance return path for the gate driver, isolating it from main-source current transients. This eliminates voltage spikes across source inductance that cause delayed turn-off and false turn-on-critical for stable operation in high-di/dt DAB and PSFB topologies.

Is this part suitable for non-automotive industrial applications?

Yes. While AEC-Q101 qualified, the device's 175 °C max junction temperature, 7.07 mm creepage, and robust RBSOA make it equally suitable for industrial UPS, solar string inverters, and EV charging infrastructure where high reliability and HV isolation are required.

AIMZH120R120M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 7A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 2.2mA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 458 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 133W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-11

AIMZH120R120M1TXKSA1 FAQ

1.How can I place an order for AIMZH120R120M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZH120R120M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZH120R120M1TXKSA1 reliable?

The price and inventory of AIMZH120R120M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZH120R120M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZH120R120M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZH120R120M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZH120R120M1TXKSA1?

AIMZH120R120M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZH120R120M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZH120R120M1TXKSA1?

For technical support, including AIMZH120R120M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZH120R120M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZH120R120M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZH120R120M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZH120R120M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZH120R120M1TXKSA1?

All AIMZH120R120M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZH120R120M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZH120R120M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZH120R120M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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