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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31J60W,S1VQ

Name: TK31J60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK31J60W,S1VQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31J60W,S1VQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: TK31J60W,S1VQ.pdf

Description:: MOSFET N-CH 600V 30.8A TO3P

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK31J60W,S1VQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 30.8 A continuous drain current, and ultra-low R_DS(ON) of 0.073 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in PFC and main switch stages.

For engineers reviewing the TK31J60W,S1VQ datasheet, TK31J60W,S1VQ pinout, TK31J60W,S1VQ application, or TK31J60W,S1VQ equivalent, key selection criteria include avalanche ruggedness (E_AS = 437 mJ), MOSFET dv/dt immunity (≥50 V/ns), gate charge profile (Q_g = 86 nC), and TO-3P(N) thermal performance (R_th(ch-c) = 0.543 °C/W).

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its enhancement-mode threshold voltage (2.7–3.7 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits t_rr = 410 ns and Q_rr = 3.5 µC under specified conditions, supporting ZVS-capable topologies. Thermal design leverages the TO-3P(N) package's low channel-to-case resistance and heatsink-integrated drain terminal for direct thermal coupling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS up to 400 V DC bus with margin
R_DS(ON)	0.073 Ω (typ.) - reduces conduction loss in high-current PFC and LLC primary switches
I_D (DC)	30.8 A - enables single-device solutions for 300–500 W industrial power supplies
E_AS	437 mJ - withstands single-pulse inductive energy during hard-switching transitions
Q_g	86 nC - balances gate drive loss and switching speed for 65–100 kHz operation
dv/dt immunity	≥50 V/ns - prevents false turn-on in high-dV/dt bridge-leg configurations
R_th(ch-c)	0.543 °C/W - allows >200 W dissipation with moderate heatsinking at T_c = 100 °C

Pinout & Package

TK31J60W,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated mounting holes, a metal tab for heatsink attachment, and a 4.6 g typical mass. The drain terminal is electrically connected to the case for low-inductance thermal and power paths.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control input requiring <86 nC charge for full enhancement
2	Drain (Heatsink)	Main high-voltage power terminal; electrically tied to metal case for thermal conduction
3	Source	Reference node for gate drive and current sensing; low-inductance Kelvin connection possible

Key Features

Feature	Design Value
DTMOS™ IV super-junction structure	Enables 0.073 Ω R_DS(ON) at 600 V rating-reducing conduction loss by ~35% vs. planar MOSFETs
Enhancement-mode V_th	2.7–3.7 V range ensures reliable turn-off at 0 V gate bias and robust noise margin at 5 V logic
Low Q_gd/Q_g ratio	41/86 nC = 0.48 - improves hard-switching efficiency and EMI behavior in flyback/LLC
Body diode t_rr	410 ns - supports quasi-resonant and active-clamp forward converters with controlled reverse recovery
Avalanche-rated	Guaranteed 437 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching

Applications

Server PSU Primary Switch	Industrial PFC Boost Stage
Use Scenario: High-density 1U server power supply operating at 92% efficiency across 100–240 VAC input. IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) boost PFC stage, switching at 65 kHz. Use Value: 0.073 Ω R_DS(ON) minimizes I²R loss at 25 A RMS input current; TO-3P(N) package enables direct heatsink mounting for thermal management.	Use Scenario: 3 kW industrial motor drive front-end with active PFC and wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: High-side switch in interleaved dual-boost topology, driven by isolated gate driver. Use Value: 437 mJ E_AS withstands line surges and inductor energy dump; 150 °C max channel temperature supports extended thermal derating.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: −48 V telecom rectifier with hold-up time requirement and high reliability target (>100 khr MTBF). IC Role / Device Role / Timing Role: Primary-side switch in forward converter delivering 12 V/20 A auxiliary rail. Use Value: Low Q_g (86 nC) reduces gate drive loss; dv/dt immunity ≥50 V/ns prevents spurious turn-on during fast bus transients.	Use Scenario: Onboard charger auxiliary supply powering MCU, gate drivers, and communication ICs in 22 kW AC EVSE. IC Role / Device Role / Timing Role: High-voltage switch in flyback converter operating from 400 V DC bus. Use Value: Body diode Q_rr = 3.5 µC enables soft-recovery operation; R_th(ch-c) = 0.543 °C/W simplifies thermal design in confined enclosure space.

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 92% efficiency across 100–240 VAC input.

IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) boost PFC stage, switching at 65 kHz.

Use Value: 0.073 Ω R_DS(ON) minimizes I²R loss at 25 A RMS input current; TO-3P(N) package enables direct heatsink mounting for thermal management.

Use Scenario: 3 kW industrial motor drive front-end with active PFC and wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-side switch in interleaved dual-boost topology, driven by isolated gate driver.

Use Value: 437 mJ E_AS withstands line surges and inductor energy dump; 150 °C max channel temperature supports extended thermal derating.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: −48 V telecom rectifier with hold-up time requirement and high reliability target (>100 khr MTBF).

IC Role / Device Role / Timing Role: Primary-side switch in forward converter delivering 12 V/20 A auxiliary rail.

Use Value: Low Q_g (86 nC) reduces gate drive loss; dv/dt immunity ≥50 V/ns prevents spurious turn-on during fast bus transients.

Use Scenario: Onboard charger auxiliary supply powering MCU, gate drivers, and communication ICs in 22 kW AC EVSE.

IC Role / Device Role / Timing Role: High-voltage switch in flyback converter operating from 400 V DC bus.

Use Value: Body diode Q_rr = 3.5 µC enables soft-recovery operation; R_th(ch-c) = 0.543 °C/W simplifies thermal design in confined enclosure space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW31N60DM6	600 V, 31 A, R_DS(ON) = 0.075 Ω, Q_g = 82 nC, TO-247 package	Higher R_th(ch-c) (0.75 °C/W) requires larger heatsink; identical avalanche rating	Preferred where ST ecosystem integration or higher peak current margin is needed
IPP60R099C7	600 V, 36 A, R_DS(ON) = 0.099 Ω, Q_g = 72 nC, TO-220FP package	Lower voltage rating margin and higher R_DS(ON); not rated for repetitive avalanche	Suitable for cost-sensitive designs with lower power density requirements and no surge stress

Compared with STW31N60DM6 and IPP60R099C7, TK31J60W,S1VQ offers superior thermal resistance and guaranteed single-pulse avalanche capability-critical for industrial PFC and telecom rectifiers where reliability under transient overload is mandatory.

Availability

TK31J60W,S1VQ is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and EV charging auxiliary power supplies requiring stable component supply and long-term lifecycle support.

Supply support for TK31J60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.

TK31J60W,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for TK31J60W,S1VQ at T_c = 100 °C?

The TK31J60W,S1VQ supports 30.8 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current is approximately 18.5 A, based on thermal limits and R_th(ch-c) = 0.543 °C/W. Always verify junction temperature using actual board-level thermal measurements in the final design.

Does TK31J60W,S1VQ have a fully characterized body diode for synchronous rectification?

No-TK31J60W,S1VQ features an integrated body diode optimized for freewheeling and recovery in hard-switched topologies, not synchronous rectification. Its reverse recovery time (t_rr = 410 ns) and charge (Q_rr = 3.5 µC) are specified for unidirectional conduction; it lacks the low V_SD and fast soft recovery required for SR control. Use dedicated SR controllers with discrete Schottky or GaN FETs instead.

Is TK31J60W,S1VQ RoHS compliant and lead-free?

Yes-TK31J60W,S1VQ is RoHS compliant and lead-free, as indicated by the underlined lot number marking per Toshiba's environmental labeling convention ([[G]]/RoHS COMPATIBLE). It meets Directive 2011/65/EU and contains no restricted substances above threshold limits. Full compliance documentation is available upon request from Toshiba or Aetrix Electronics.

Can TK31J60W,S1VQ be used in zero-voltage switching (ZVS) circuits?

Yes-TK31J60W,S1VQ supports ZVS operation due to its low output capacitance (C_oss = 70 pF typ.) and controlled Q_gd/Q_g ratio (0.48). When paired with appropriate resonant inductance and timing, its dv/dt immunity (≥50 V/ns) and soft reverse recovery enable reliable ZVS in LLC and phase-shifted full-bridge converters up to 300 kHz.

What is the gate threshold voltage range for TK31J60W,S1VQ, and how does it affect drive circuit design?

The gate threshold voltage V_th for TK31J60W,S1VQ is 2.7–3.7 V (V_DS = 10 V, I_D = 1.5 mA). This range ensures clean turn-on with 5 V logic-level drivers and robust noise immunity against ground bounce. To guarantee full enhancement, gate drive must reach ≥10 V-using a dedicated 12–15 V isolated supply avoids partial turn-on and excessive R_DS(ON) in the linear region.

TK31J60W,S1VQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

TK31J60W,S1VQ FAQ

1.How can I place an order for TK31J60W,S1VQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31J60W,S1VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31J60W,S1VQ reliable?

The price and inventory of TK31J60W,S1VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31J60W,S1VQ is usually 5 days.

3.What payment methods are accepted for TK31J60W,S1VQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31J60W,S1VQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31J60W,S1VQ?

TK31J60W,S1VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31J60W,S1VQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31J60W,S1VQ?

For technical support, including TK31J60W,S1VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31J60W,S1VQ requirements.

6.How does Aetrix verify that TK31J60W,S1VQ is sourced from the original manufacturer or authorized distributors?

All TK31J60W,S1VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31J60W,S1VQ meets industry standards.

7.What is the process for return or replacement of TK31J60W,S1VQ?

All TK31J60W,S1VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK31J60W,S1VQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31J60W,S1VQ part is unused and in its original packaging.

Return procedure for TK31J60W,S1VQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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