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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMBG120R160M1XTMA1

Name: AIMBG120R160M1XTMA1
Brand: Infineon Technologies
SKU: AIMBG120R160M1XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG120R160M1XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: AIMBG120R160M1XTMA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMBG120R160M1XTMA1 from Infineon Technologies is a 1200 V, 160 mΩ silicon carbide (SiC) MOSFET in D2PAK-7L package, designed for high-efficiency power conversion in industrial and renewable energy systems. It features 38 A continuous drain current (T_C = 25°C), 1200 V blocking voltage, gate threshold voltage of 2.9 V (typ), and low switching losses optimized for hard-switched totem-pole PFC and solar inverters.

For engineers reviewing the AIMBG120R160M1XTMA1 datasheet, AIMBG120R160M1XTMA1 pinout, AIMBG120R160M1XTMA1 application, or AIMBG120R160M1XTMA1 equivalent, key selection criteria include R_DS(on) tolerance at 18 V gate drive, unclamped inductive switching (UIS) capability, body diode reverse recovery charge (Q_rr), and thermal resistance (R_thJC) for heatsink design validation.

Technical Context

This SiC MOSFET employs planar trench-gate technology with optimized cell pitch and field plate design to achieve stable 1200 V avalanche ruggedness and reduced gate-drain charge (Q_gd). Its low output capacitance (C_oss = 420 pF @ V_DS = 600 V) enables high-frequency operation up to 200 kHz in resonant topologies.

The device integrates a fast, low-Q_rr intrinsic body diode (Q_rr = 120 nC @ I_F = 19 A, di/dt = 100 A/µs) suitable for bidirectional switching without external anti-parallel diodes in certain bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Maximum drain-source blocking voltage under repetitive conditions; supports 1000 V DC-link designs with 20% margin.
R_DS(on) @ V_GS = 18 V	160 mΩ (max) - Confirmed per sales code; defines conduction loss at rated current and impacts thermal design at 38 A.
I_D (continuous, T_C = 25°C)	38 A - Continuous drain current rating; derates to ~24 A at T_C = 100°C per thermal curve.
Q_g / Q_gd	45 nC / 11 nC - Total and gate-drain charge values determine gate driver sizing and switching speed control.
E_oss @ V_DS = 600 V	120 nJ - Output stored energy directly affects zero-voltage switching (ZVS) transition efficiency in LLC converters.
R_thJC	0.55 K/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with minimal thermal interface resistance.

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad and Kelvin source terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source connection	Primary current return path; not Kelvin-connected.
2 (Gate)	Control input	Drives channel inversion; requires 15–20 V gate drive with low-impedance path.
3 (Drain)	High-side power node	Exposed copper pad; electrically and thermally connected to drain; must be soldered to PCB ground plane or heatsink.
4 (Kelvin Source)	Sense reference for gate drive	Provides noise-immune gate-source reference; separates power and signal return paths to suppress Miller-induced turn-on.
5 (Source)	Main source connection	Redundant source pin for current sharing and mechanical stability.
6 (Drain)	High-side power node	Secondary drain connection; shares current with Pin 3.
7 (Source)	Main source connection	Third source pin for low-inductance layout and thermal dissipation.

Key Features

Feature	Design Value
1200 V avalanche-rated	Guaranteed single-pulse UIS capability up to 1200 V × 38 A × 10 µs without failure; eliminates need for external snubbers in overvoltage transients.
Low Q_rr body diode	Q_rr = 120 nC enables efficient bidirectional conduction in active rectification and totem-pole PFC without reverse recovery spikes.
Kelvin source configuration	Separates high-current source return from gate drive reference, reducing dynamic R_DS(on) overshoot and improving switching consistency at >100 kHz.
Enhanced E_oss-V_DS linearity	E_oss vs. V_DS curve shows <5% deviation from quadratic fit up to 800 V; improves ZVS predictability in resonant converters.

Applications

Industrial Motor Drives

Solar String Inverters

Use Scenario: 15–30 kW three-phase inverter stage operating at 16–20 kHz with forced-air cooling.

IC Role / Device Role / Timing Role: High-side switch in 3L-NPC topology; handles 600 V DC-link and 30 A RMS phase current.

Use Value: 160 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 650 V Si IGBTs, enabling >98.5% peak efficiency.

Use Scenario: Dual-string 10 kW photovoltaic inverter with transformerless topology and 1000 V DC input.

IC Role / Device Role / Timing Role: Main switching device in interleaved boost stage; switches at 100 kHz with soft-charging gate drive.

Use Value: Low C_oss (420 pF) and E_oss (120 nJ) minimize dead-time losses and enable >99% boost-stage efficiency.

EV Onboard Chargers

Energy Storage Systems

Use Scenario: 11 kW bidirectional OBC using dual-active-bridge (DAB) architecture with 800 V battery interface.

IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge; operates in ZVS mode at 200 kHz.

Use Value: Precise E_oss vs. V_DS data allows accurate ZVS boundary prediction, reducing auxiliary winding losses by 18%.

Use Scenario: 500 kW grid-tied battery inverter with multi-level NPC configuration and liquid cooling.

IC Role / Device Role / Timing Role: Medium-voltage leg switch handling 1000 V DC-link and 400 A peak current pulses.

Use Value: 1200 V rating and 0.55 K/W R_thJC support 97.2% system efficiency at full load with <85°C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0160120K	R_DS(on) = 160 mΩ (same), but Q_g = 52 nC (vs. 45 nC); higher gate charge increases driver loss.	Body diode Q_rr = 145 nC (vs. 120 nC); higher reverse recovery loss in hard-commutated PFC.	Prefer AIMBG120R160M1XTMA1 where gate drive power budget is constrained or body diode commutation dominates loss.
ROHM SCT3160AL	R_DS(on) = 160 mΩ (same), but R_thJC = 0.65 K/W (vs. 0.55 K/W); 18% higher thermal resistance limits power density.	No Kelvin source; susceptible to Miller-induced false turn-on above 150 kHz.	Prefer AIMBG120R160M1XTMA1 in high-frequency (>150 kHz), high-reliability industrial inverters requiring robust gate control.

Compared with C3M0160120K and SCT3160AL, AIMBG120R160M1XTMA1 delivers lower gate drive loss, superior body diode softness, and tighter thermal coupling-making it optimal for compact, high-efficiency 1200 V systems where switching frequency, reliability, and thermal headroom are critical.

Availability

AIMBG120R160M1XTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for AIMBG120R160M1XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

AIMBG120R160M1XTMA1 belongs to Infineon's CoolSiC™ Gen1+ family, engineered specifically for high-voltage, high-frequency power conversion in solar, storage, and traction applications demanding ruggedness and efficiency.

FAQ

What is the maximum recommended gate voltage for AIMBG120R160M1XTMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 18 V as the nominal turn-on voltage for guaranteed R_DS(on) performance and long-term reliability. Operating above 18 V does not reduce R_DS(on) meaningfully and increases gate oxide stress risk. Gate drive circuits must clamp at ≤20 V and avoid negative voltage undershoot below –5 V during switching transitions.

Does AIMBG120R160M1XTMA1 require a negative gate voltage for turn-off?

No. The device is fully enhancement-mode and turns off reliably with 0 V gate drive. However, applying –2 V to –5 V during turn-off improves immunity to dv/dt-induced false turn-on in high-di/dt applications such as totem-pole PFC. This is optional-not required-and must remain within the –5 V absolute minimum rating.

Can AIMBG120R160M1XTMA1 replace silicon IGBTs in existing 1200 V designs?

Yes, but layout and gate drive must be revised: Kelvin source routing is mandatory, gate resistor values must be reduced (typically 2.2–4.7 Ω), and snubber networks may be simplified due to lower switching losses and absence of tail current. Thermal interface must accommodate the lower R_thJC (0.55 K/W) to avoid overcooling or uneven heat distribution.

Is the D2PAK-7L package lead-free and RoHS-compliant?

Yes. AIMBG120R160M1XTMA1 uses a lead-free, halogen-free, RoHS-compliant D2PAK-7L package with matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3). Reflow profile follows IPC/JEDEC J-STD-020D.2 with peak temperature ≤260°C and time above 217°C limited to 60–150 seconds.

AIMBG120R160M1XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 5A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 1.6mA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

AIMBG120R160M1XTMA1 FAQ

1.How can I place an order for AIMBG120R160M1XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG120R160M1XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG120R160M1XTMA1 reliable?

The price and inventory of AIMBG120R160M1XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG120R160M1XTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG120R160M1XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG120R160M1XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG120R160M1XTMA1?

AIMBG120R160M1XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG120R160M1XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG120R160M1XTMA1?

For technical support, including AIMBG120R160M1XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG120R160M1XTMA1 requirements.

6.How does Aetrix verify that AIMBG120R160M1XTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG120R160M1XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG120R160M1XTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG120R160M1XTMA1?

All AIMBG120R160M1XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG120R160M1XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG120R160M1XTMA1 part is unused and in its original packaging.

Return procedure for AIMBG120R160M1XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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