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Nexperia USA Inc. PSMN1R0-80CSEJ

Name: PSMN1R0-80CSEJ
Brand: Nexperia USA Inc.
SKU: PSMN1R0-80CSEJ
Price: 2.40 USD
Availability: InStock
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Part No.:: PSMN1R0-80CSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R0-80CSEJ.pdf

Description:: PSMN1R0-80CSE/SOT8005A/CCPAK12

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Product details

Overview

PSMN1R0-80CSEJ from Nexperia is an N-channel enhancement-mode MOSFET in CCPAK1212i (SOT8005A) package, rated for 80 V V_DS, 0.95 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 495 A continuous drain current at T_mb = 25 °C and features enhanced Safe Operating Area (SOA) for linear-mode hot-swap and soft-start applications in 48 V telecom backplanes.

For engineers reviewing the PSMN1R0-80CSEJ datasheet, PSMN1R0-80CSEJ pinout, PSMN1R0-80CSEJ application, or PSMN1R0-80CSEJ equivalent, this page provides verified SOA performance data, thermal resistance (R_th(j-mb) = 0.075 K/W), gate charge (Q_G(tot) = 336 nC), avalanche energy (E_AS = 1890 mJ), and mounting-base–referenced current derating curves - all critical for high-reliability power rail protection design.

Technical Context

This MOSFET employs a copper-clip inverted package (CCPAK1212i) with drain-connected mounting base for top-side cooling, enabling direct thermal interface to heatsinks. Its SOA is fully optimized for linear-mode operation, supporting robust inrush current handling during hot-swap turn-on without thermal runaway.

The device exhibits low threshold voltage variation (ΔV_GS(th)/ΔT = −6.92 mV/K) and stable R_DS(on) up to 175 °C (1.6–2.2 mΩ), ensuring predictable conduction loss across industrial temperature ranges. Gate drive requirements are defined by V_GS(pl) = 4.5 V and Q_GD = 42.5 nC (typ), supporting fast, controlled switching with external gate resistors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48 V systems with ≥1.6× safety margin against transients.
R_DS(on)	0.95 mΩ (typ) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables sub-1 mΩ conduction loss for high-efficiency load switching.
I_D (cont)	495 A at T_mb = 25 °C - Continuous current rating referenced to mounting base temperature, not ambient; requires PCB thermal design per Fig. 2.
R_th(j-mb)	0.075 K/W (typ) - Junction-to-mounting-base thermal resistance enables >1.5 kW power dissipation with minimal ΔT under forced cooling.
E_AS	1890 mJ (unclamped) - Avalanche energy rating validated at 129 A, 80 V, 282 µs; supports single-pulse fault tolerance in e-fuse applications.
Q_G(tot)	336 nC (typ) - Total gate charge determines gate driver sizing and switching loss; low Q_GD/Q_G ratio improves hard-switching robustness.
t_r/t_f	84 ns / 107 ns - Fast switching transitions reduce overlap loss; specified with R_G(ext) = 5 Ω, enabling <100 ns turn-off control.

Pinout & Package

CCPAK1212i (SOT8005A) is a 12-terminal surface-mount copper-clip package measuring 12 mm × 12 mm × 2.5 mm, with exposed drain-connected mounting base for top-side thermal management. The inverted layout places source and gate terminals on the top side, drain on the bottom via the thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1–5	Source (S)	Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt hot-swap events.
6	Gate (G)	Single gate terminal with low-inductance path; requires Kelvin connection for precise gate drive in linear-mode operation.
7–12	Drain (D)	Six drain terminals plus mounting base provide low-impedance drain return; mounting base is electrically connected to drain.
mb	Mounting Base	Drain-connected thermal interface; must be soldered to PCB copper pour or heatsink for R_th(j-mb) performance.

Key Features

Feature	Design Value
Enhanced SOA	Validated linear-mode operation up to 100 A at 40 V (Fig. 3); prevents thermal runaway during soft-start inrush.
Inverted CCPAK1212i	Top-side cooling architecture enables direct heatsink attachment without thermal vias; JEDEC-qualified for second-source compatibility.
High-current capability	495 A continuous (T_mb = 25 °C) and 3365 A pulsed (tp ≤ 10 µs); supports high-power 48 V server and telecom load switching.
Avalanche ruggedness	100% tested unclamped E_AS = 1890 mJ; eliminates need for external snubbers in e-fuse and overvoltage protection circuits.
Low R_DS(on) drift	R_DS(on) increases only 2.1× from 25 °C to 175 °C (Fig. 12); maintains efficiency in high-temperature environments.

Applications

Hot Swap

Load Switch

Use Scenario: Insertion of line cards into live 48 V telecom backplanes without disrupting system operation.

IC Role / Device Role / Timing Role: Main power FET in hot-swap controller circuit; operates in linear mode during inrush, then fully enhances for low-loss conduction.

Use Value: Enhanced SOA prevents thermal failure during 100+ A inrush currents; 0.95 mΩ R_DS(on) limits steady-state I²R loss to <5 W at 495 A.

Use Scenario: Controlled power-up of high-capacitance subsystems (e.g., FPGA banks, memory modules) in enterprise servers.

IC Role / Device Role / Timing Role: High-current load switch driven by dedicated controller IC; handles both slow-ramp soft-start and full-conduction phases.

Use Value: 495 A continuous rating supports multi-rail sequencing; low Q_GD ensures clean turn-on/turn-off transitions without shoot-through risk.

Soft Start

E-fuse

Use Scenario: Gradual ramp-up of 48 V supply to downstream DC-DC converters to limit input capacitor charging current.

IC Role / Device Role / Timing Role: Linear-mode pass element regulated by op-amp feedback loop; dissipates peak power during ramp phase.

Use Value: SOA-optimized design sustains 100 A at 20 V for >100 ms (Fig. 3); R_th(j-mb) = 0.075 K/W enables rapid heat extraction to mounting base.

Use Scenario: Overcurrent protection for 48 V distribution networks in data center power shelves, replacing mechanical fuses.

IC Role / Device Role / Timing Role: Current-sensing and interrupting element; triggered by controller upon fault detection; absorbs fault energy via avalanche.

Use Value: 1890 mJ E_AS rating allows single-pulse fault clearing without destruction; 129 A I_AS supports fast trip response below cable damage thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N08N	80 V, 2.0 mΩ R_DS(on), TO-220FP package; R_th(j-c) = 0.55 K/W; no SOA optimization for linear mode.	Limited to switched-mode use; unsuitable for sustained inrush or soft-start linear operation.	Select only if board space permits through-hole mounting and application remains fully saturated.
Vishay SiR872DP	80 V, 1.1 mΩ R_DS(on), PowerPAK® 1212-8 package; R_th(j-a) = 1.2 K/W; SOA not characterized beyond 10 ms.	Acceptable for short-duration hot-swap but lacks validated 100+ ms linear-mode SOA data.	Prefer for cost-sensitive designs where thermal budget allows higher R_th and SOA margin is secondary.

Compared with IPP020N08N and SiR872DP, PSMN1R0-80CSEJ offers superior thermal performance (R_th(j-mb) 7× lower than TO-220FP), guaranteed SOA for >100 ms linear operation, and JEDEC-standardized CCPAK1212i packaging-making it uniquely suited for mission-critical 48 V hot-swap and e-fuse implementations.

Availability

PSMN1R0-80CSEJ is available at Aetrix Electronics and suitable for 48 V telecom backplane hot-swap, high-current load switching, and solid-state e-fuse applications requiring stable component supply and long-term lifecycle support.

Supply support for PSMN1R0-80CSEJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's Application Specific MOSFETs (ASFETs) portfolio, engineered specifically for hot-swap and soft-start systems demanding robust linear-mode SOA, ultra-low R_DS(on), and top-side cooling capability.

FAQ

What is the maximum continuous drain current for PSMN1R0-80CSEJ?

The maximum continuous drain current is 495 A at mounting base temperature (T_mb) = 25 °C, as verified in application testing (Fig. 2). Practical current is limited by PCB copper area, thermal interface quality, and ambient conditions-not by the die itself. Derating begins above 25 °C T_mb, reaching ~250 A at T_mb = 100 °C.

Does PSMN1R0-80CSEJ require a heatsink?

Yes-its CCPAK1212i package is designed for top-side cooling via the drain-connected mounting base. To achieve rated 1.55 kW power dissipation and maintain T_j ≤ 175 °C, the mounting base must be thermally coupled to a heatsink or large copper plane. Without external cooling, safe continuous current drops significantly due to R_th(j-mb) dependency.

Can PSMN1R0-80CSEJ be used in avalanche mode?

Yes-every unit undergoes 100% unclamped inductive switching test, guaranteeing E_AS = 1890 mJ at 129 A, 80 V, and 282 µs. This makes it suitable for e-fuse and overvoltage protection where controlled avalanche energy absorption replaces external clamping components.

Is the CCPAK1212i package compatible with standard reflow profiles?

Yes-the SOT8005A footprint complies with IPC-7351B and JEDEC standards. Reflow requires peak temperature ≤ 260 °C (per JEDEC J-STD-020), 0.1 mm stencil thickness, and solder land pattern matching Fig. 19. Thermal pad must be fully soldered to ensure R_th(j-mb) performance and mechanical reliability.

PSMN1R0-80CSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 495A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.95Ohm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 504 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 36802 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.55kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212i

PSMN1R0-80CSEJ FAQ

1.How can I place an order for PSMN1R0-80CSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-80CSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-80CSEJ reliable?

The price and inventory of PSMN1R0-80CSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-80CSEJ is usually 5 days.

3.What payment methods are accepted for PSMN1R0-80CSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-80CSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-80CSEJ?

PSMN1R0-80CSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-80CSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-80CSEJ?

For technical support, including PSMN1R0-80CSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-80CSEJ requirements.

6.How does Aetrix verify that PSMN1R0-80CSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-80CSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-80CSEJ meets industry standards.

7.What is the process for return or replacement of PSMN1R0-80CSEJ?

All PSMN1R0-80CSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-80CSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-80CSEJ part is unused and in its original packaging.

Return procedure for PSMN1R0-80CSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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