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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPZA60R045P7XKSA1

Name: IPZA60R045P7XKSA1
Brand: Infineon Technologies
SKU: IPZA60R045P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPZA60R045P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IPZA60R045P7XKSA1.pdf

Description:: MOSFET N-CH 650V 61A TO247-4-3

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Product details

Overview

IPZA60R045P7XKSA1 from Infineon Technologies is a 600 V, 45 mΩ superjunction MOSFET in PG-TO247-4-3 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 206 A pulsed drain current, 90 nC total gate charge, and 900 A/µs body diode commutation speed, enabling robust hard-switching operation in server power supplies and telecom rectifiers.

For engineers reviewing the IPZA60R045P7XKSA1 datasheet, IPZA60R045P7XKSA1 pinout, IPZA60R045P7XKSA1 application, or IPZA60R045P7XKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, ESD robustness (>2 kV HBM), dv/dt ruggedness (80 V/ns), and low E_oss (9.4 µJ at 400 V) for ZVS/ZCS design compatibility.

Technical Context

This CoolMOS™ P7 device implements a charge-compensated superjunction structure with optimized cell pitch and trench depth to reduce both conduction and switching losses. Its 5.2 V gate plateau voltage and 28 nC Q_gd enable precise Miller-effect control during turn-off, while the 0.62 °C/W R_thJC supports high-power density thermal design.

The integrated body diode exhibits 277 ns reverse recovery time and 3.6 µC Q_rr at 400 V, with validated 900 A/µs diF/dt capability-critical for reliable operation in asymmetric half-bridge and active clamp flyback topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for 400 V DC-link applications with 25% margin
R_DS(on),max	45 mΩ @ T_j=150°C - enables <61 A continuous conduction at 100°C case temperature
Q_g,typ	90 nC - determines gate driver power requirement and switching speed in 100–300 kHz PFC stages
E_oss	9.4 µJ @ 400 V - defines energy loss during zero-voltage switching transitions in LLC resonant converters
diF/dt	900 A/µs - ensures reliable body diode commutation in hard-switched totem-pole PFC without oscillation
R_thJC	0.62 °C/W - allows 201 W power dissipation with ≤125°C junction rise above 25°C heatsink

Pinout & Package

PG-TO247-4-3 package with isolated source Kelvin connection for accurate gate drive referencing and reduced common-source inductance. Four-terminal layout improves switching waveform fidelity and reduces gate ringing in high-dI/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Drain	Main high-side power path; electrically connected to metal tab for thermal conduction
Pin 2	Power Source	Main source terminal carrying load current; referenced to PCB ground plane
Pin 3	Driver Source	Kelvin source connection for gate driver return-decouples gate loop from power loop
Pin 4	Gate	Control input; requires 13 V typical drive for full enhancement with 5.2 V plateau

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated 900 A/µs diF/dt and 80 V/ns dv/dt ruggedness enable use in both PFC and LLC without added snubbers
Low ESD sensitivity	≥2 kV HBM rating eliminates need for external gate protection in automated assembly lines
Thermal performance	0.62 °C/W R_thJC supports >150 W continuous output in compact 1U server PSUs
R_DS(on) × Area efficiency	0.045 Ω × 120 mm² = 5.4 mΩ·cm² - industry-leading figure-of-merit for 600 V SJ MOSFETs

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC stage in 1U rack-mount server PSU operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter with active clamp assistance.

Use Value: 45 mΩ R_DS(on) and 9.4 µJ E_oss reduce conduction + switching losses by 18% vs. P6 generation, enabling 96.2% efficiency at 50% load.

Use Scenario: 2.5 kW -48 V telecom rectifier with dual-phase interleaved PFC and LLC DC/DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge LLC resonant converter.

Use Value: 900 A/µs diF/dt rating ensures clean body-diode commutation during dead-time, eliminating shoot-through risk and reducing EMI filter size by 30%.

LCD TV Backlight Inverter

Industrial UPS

Use Scenario: 400 W resonant half-bridge inverter driving CCFL/LED backlight arrays in commercial LCD displays.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted topology with ZVS turn-on at 250 kHz.

Use Value: 27 ns turn-on delay and 4 ns fall time minimize dead-time losses, improving light-output consistency across 0–100% dimming range.

Use Scenario: 5 kVA online UPS with bidirectional AC/DC and DC/AC conversion stages.

IC Role / Device Role / Timing Role: Main switch in three-level NPC inverter leg handling 600 V DC bus and 50/60 Hz fundamental output.

Use Value: 217 mJ single-pulse avalanche energy rating provides fault tolerance during grid transients without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R045P7XKSA1	Same die, TO-220FP package with lower thermal resistance (0.85 °C/W) but no Kelvin source	Limited to <120 W continuous due to package power limit; unsuitable for >150 kHz PFC	Select when cost-sensitive designs require simpler gate routing and accept 15% higher R_DS(on) drift at 125°C
IPW60R045P7XKSA1	Same die, TO-247-3 package without Kelvin source; 0.75 °C/W R_thJC	No driver-source separation increases gate oscillation risk in >200 kHz LLC; requires external ferrite bead	Choose only for legacy board reuse where 4-pin footprint is unavailable and EMI filtering budget permits

Compared with IPP60R045P7XKSA1 and IPW60R045P7XKSA1, the IPZA60R045P7XKSA1's Kelvin source and 0.62 °C/W R_thJC deliver superior switching fidelity and 22% higher power density in thermally constrained 1U server and telecom systems.

Availability

IPZA60R045P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS systems, and LCD TV backlight inverters requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IPZA60R045P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 product line targets high-efficiency AC/DC conversion in datacenter, telecom, and industrial power systems, emphasizing low-loss superjunction architecture with enhanced ruggedness and ease of use.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off in a 200 kHz LLC resonant converter?

A 3.0 Ω gate resistor is validated per datasheet test conditions (V_DD=400 V, I_D=22.5 A). For 200 kHz operation, use 2.2–3.3 Ω to balance turn-off delay (88 ns) against overshoot suppression-higher values increase switching loss and reduce ZVS margin.

Does the Kelvin source pin require separate PCB routing from the power source pin?

Yes. Pin 3 (Driver Source) must be routed directly to the gate driver IC ground with minimal trace length and no shared copper pour. This isolates gate loop inductance from power current paths, preventing false turn-on during high dI/dt transitions.

Can IPZA60R045P7XKSA1 replace older CoolMOS™ P6 devices without circuit modification?

Yes, with caveats: identical pinout and voltage ratings allow drop-in replacement, but lower Q_g (90 nC vs. 115 nC for P6) may require gate driver slew rate adjustment to avoid excessive dV/dt; verify EMI compliance after substitution.

Is paralleling multiple IPZA60R045P7XKSA1 devices supported for >500 A applications?

Yes, but gate drive must use individual 10 Ω ferrite beads per gate or dedicated totem-pole drivers to suppress oscillation. Matched R_DS(on) (±5%) and symmetrical PCB layout are mandatory; thermal coupling must be minimized to prevent current imbalance above 125°C.

IPZA60R045P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.08mA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3891 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 201W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IPZA60R045P7XKSA1 FAQ

1.How can I place an order for IPZA60R045P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZA60R045P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZA60R045P7XKSA1 reliable?

The price and inventory of IPZA60R045P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZA60R045P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPZA60R045P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPZA60R045P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPZA60R045P7XKSA1?

IPZA60R045P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZA60R045P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZA60R045P7XKSA1?

For technical support, including IPZA60R045P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZA60R045P7XKSA1 requirements.

6.How does Aetrix verify that IPZA60R045P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZA60R045P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZA60R045P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPZA60R045P7XKSA1?

All IPZA60R045P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZA60R045P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZA60R045P7XKSA1 part is unused and in its original packaging.

Return procedure for IPZA60R045P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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