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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
S3M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	2,092	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	77A (Tc)	18V	32mOhm @ 48A, 18V	4V @ 20mA	175 nC @ 18 V	+22V, -8V	3519 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
G3F25MT06L-TR 650V 20M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	8,600	RFQ	-	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	125A (Tc)	15V, 18V	27.5mOhm @ 35A, 18V	4.3V @ 15mA	108 nC @ 18 V	+22V, -10V	2939 pF @ 400 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
DIF065SIC030 SIC MOSFET, TO-247-4L, N, 105A, Diotec Semiconductor	2,722	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	105A (Tc)	18V	30mOhm @ 75A, 18V	4V @ 23.5mA	145 nC @ 18 V	+18V, -4V	3300 pF @ 600 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCTWA40N12G24AG TO247-4 STMicroelectronics	9,812	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	290W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW170SIC049 SIC MOSFET, TO-247-3L, N, 67A, 1 Diotec Semiconductor	6,892	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1700 V	67A (Tc)	18V	49mOhm @ 40A, 18V	4V @ 15mA	179 nC @ 18 V	+18V, -4V	3046 pF @ 1000 V	-	357W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
MXP120A045FW-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	3,025	RFQ	-	MaxSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	49A (Tc)	18V, 20V	56mOhm @ 20A, 20V	2.38V @ 5mA	75.6 nC @ 18 V	+22V, -10V	1958 pF @ 800 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3L
MXP120A045FL-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	8,452	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPQC60T010S7XTMA1 HIGH POWER_NEW Infineon Technologies	7,182	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-101
SCT025H120G3-7 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	8,556	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFR32N80Q3 MOSFET N-CH 800V 24A ISOPLUS247 IXYS	3,235	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	24A (Tc)	10V	300mOhm @ 16A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	6940 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
IPDQ60T010S7XTMA1 HIGH POWER_NEW Infineon Technologies	4,509	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
AIMCQ120R020M1TXTMA1 SIC_DISCRETE Infineon Technologies	2,840	RFQ	-	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	116A (Tc)	18V, 20V	25mOhm @ 43A, 20V	5.1V @ 13.7mA	82 nC @ 20 V	+25V, -10V	2667 pF @ 800 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IPQC60T010S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	6,673	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22-101
IPDQ60T010S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	6,845	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22-1
SCT020W120G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	4,205	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT020HU120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	6,493	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT012H90G3AG H2PAK-7 STMicroelectronics	9,849	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	110A (Tc)	15V, 18V	15.8mOhm @ 60A, 18V	4.2V @ 10mA	138 nC @ 18 V	+18V, -5V	3880 pF @ 600 V	-	625W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
SCT016H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	3,768	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT150N25X3HV MOSFET N-CH 250V 150A TO268HV Littelfuse Inc.	3,294	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	9mOhm @ 75A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10400 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
DMWSH120H28SM3 SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	3,166	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	97.4A (Tc)	15V	28.5mOhm @ 50A, 15V	3.6V @ 17.7mA	175 nC @ 15 V	+19V, -8V	3905 pF @ 1000 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247

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