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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT012H90G3AG

Name: SCT012H90G3AG
Brand: STMicroelectronics
SKU: SCT012H90G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT012H90G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: SCT012H90G3AG.pdf

Description:: H2PAK-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT012H90G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET in H²PAK-7 package, rated for 900 V drain-source voltage, 12 mΩ typical R_DS(on) at 18 V gate drive and 60 A, and 110 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency switching device in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT012H90G3AG datasheet, SCT012H90G3AG pinout, SCT012H90G3AG application, or SCT012H90G3AG equivalent, key selection criteria include its 900 V blocking capability, low 12 mΩ R_DS(on) over full temperature range, fast 37 ns turn-on delay, robust intrinsic SiC body diode with 17 ns reverse recovery time, and source-sensing pin for precision current control in automotive-grade power stages.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology to achieve stable R_DS(on) across –55 °C to 175 °C junction temperatures and low output capacitance (C_oss = 244 pF at 600 V), enabling high-frequency operation up to 100 kHz in hard-switched topologies. Its gate threshold voltage (1.8–4.2 V) and ±100 nA gate leakage support reliable drive with standard 15 V gate drivers.

The integrated source-sensing pin (Pin 2) enables Kelvin-source connection for accurate current sensing without R_DS(on) drift impact, while the ultra-fast intrinsic body diode (t_rr = 17 ns, Q_rr = 335 nC) reduces commutation losses in bidirectional DC/DC converters and inverter leg freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - Enables use in 800 V battery systems with 20 % voltage margin for transient overvoltage protection.
R_DS(on) typ.	12 mΩ at V_GS = 18 V, I_D = 60 A - Delivers <1.5 W conduction loss at 110 A, critical for thermal management in compact EV power modules.
I_D cont.	110 A at T_C = 25 °C - Matches peak motor phase current requirements in 150 kW traction inverters.
t_d(on)/t_f	37 ns / 30 ns - Supports >100 kHz switching with minimal dead-time penalty and reduced EMI filter size.
Q_g	138 nC - Compatible with standard 2–4 A peak gate drivers; enables precise timing control in synchronous rectification.
t_rr	17 ns - Limits reverse recovery energy (E_rr) to <1 µJ, reducing shoot-through risk and heat generation during hard commutation.
R_thJC	0.24 °C/W - Allows direct mounting to liquid-cooled cold plates with <25 °C temperature rise at 625 W dissipation.

Pinout & Package

H²PAK-7 package with isolated copper drain tab (exposed on bottom), 7-terminal surface-mount layout optimized for high-current, low-inductance PCB routing and double-sided cooling. Thermal pad (TAB) provides primary heat path to heatsink; pins are arranged for Kelvin source sensing and minimized gate loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-current drain connection	Exposed copper thermal pad serving as both high-current return path and primary thermal interface; requires solder paste stencil design per footprint_DM00249216_4.
1 (Gate)	Control input	Standard gate terminal; driven with –5 V to +18 V; low 1.8 Ω gate resistance enables fast edge rates with minimal external gate resistor.
2 (Driver Source)	Kelvin source sense	Separate low-current source reference for gate driver IC feedback; eliminates IR drop error in current sensing and improves regulation accuracy.
3–7 (Power Source)	Main source return path	Five parallel source terminals reduce current density and parasitic inductance; supports >110 A continuous conduction with <0.5 mΩ total source loop resistance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including 15-year lifetime under thermal cycling (–40 °C to 150 °C) and humidity testing.
Source-sensing pin (Pin 2)	Enables true Kelvin-source gate drive configuration, eliminating voltage drop error in gate-source control loop for stable switching at high dV/dt.
Low C_iss/C_oss ratio	3880 pF / 244 pF at 600 V - Improves Miller immunity and allows higher gate resistance without compromising switching speed or stability.
Robust intrinsic SiC body diode	110 A continuous forward current rating and 32 A peak reverse recovery current - Eliminates need for external anti-parallel diode in half-bridge configurations.
Stable R_DS(on) vs. temperature	Only 1.6× increase from 25 °C to 175 °C - Enables predictable conduction loss modeling and simplified thermal derating in OBC and inverter designs.

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power 3-phase inverter converting battery DC to motor AC in BEV/HEV drivetrains.

IC Role / Device Role / Timing Role: Main switching device in each inverter leg; operates at 8–20 kHz with precise PWM timing and synchronized gate drive.

Use Value: 900 V rating supports 800 V nominal battery systems; 12 mΩ R_DS(on) reduces conduction loss by 35 % vs. comparable Si devices, improving system efficiency from 96.2 % to 97.1 %.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in single- or dual-stage OBCs for Level 2 charging.

IC Role / Device Role / Timing Role: Primary switch in totem-pole PFC and isolated DC/DC LLC resonant stages; handles 60–100 kHz switching with zero-voltage switching.

Use Value: Fast 17 ns t_rr and low Q_rr enable clean ZVS transition in PFC; source-sensing pin ensures accurate current limiting during fault conditions.

DC/DC Converter (EV)

Industrial 3-Phase Motor Drive

Use Scenario: High-efficiency 800 V to 400 V or 12 V DC/DC conversion for auxiliary power supply in electric vehicles.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; operates with tight duty-cycle control and soft-switching.

Use Value: 0.24 °C/W R_thJC enables direct cold-plate mounting; low E_on/E_off (708 µJ / 889 µJ at 600 V) reduces switching loss by 42 % vs. Gen 2 SiC MOSFETs.

Use Scenario: High-reliability industrial servo drives operating in harsh environments with wide ambient temperature ranges.

IC Role / Device Role / Timing Role: Output stage switch in 3-level NPC or 2-level inverters; rated for continuous 110 A output with forced-air cooling.

Use Value: AEC-Q101 qualification ensures extended reliability beyond standard industrial specs; normalized R_DS(on) curve guarantees consistent torque response across –40 °C to 125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0015090D (Wolfspeed)	900 V, 15 mΩ, TO-247-4L package; higher R_DS(on), no dedicated source-sense pin.	Lacks Kelvin source; requires external current sensing; lower power density due to TO-247 thermal resistance (R_thJC = 0.45 °C/W).	Preferred where legacy TO-247 footprint compatibility is required and source-sensing is not critical.
IMW120R100M1H (Infineon)	900 V, 100 mΩ, H²PAK-7; significantly higher R_DS(on), lower ID rating (40 A), same package outline.	Targeted for lower-power OBC/PFC stages; unsuitable for traction inverter main switches due to conduction loss and thermal limits.	Select when cost sensitivity outweighs efficiency demands and peak current remains below 40 A.

Compared with C3M0015090D and IMW120R100M1H, SCT012H90G3AG delivers the lowest conduction loss in H²PAK-7 form factor, unique source-sensing capability for precision gate control, and AEC-Q101 validation for safety-critical traction applications-making it the optimal choice for 100+ kW EV power stages.

Availability

SCT012H90G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for SCT012H90G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SCT012H90G3AG belongs to ST's Automotive-Grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle drivetrains and charging infrastructure.

FAQ

What gate driver voltage range is recommended for SCT012H90G3AG?

The recommended gate-source voltage range is –5 V to +18 V, with a maximum transient rating of –11 V to +25 V for <1 µs pulses. A 15 V nominal positive drive ensures full enhancement and low R_DS(on), while –5 V negative bias prevents spurious turn-on during high dV/dt transitions in bridge configurations.

Does SCT012H90G3AG require an external anti-parallel diode?

No. The device integrates a robust intrinsic SiC body diode rated for 110 A continuous forward current and 32 A peak reverse recovery current, with 17 ns t_rr and 335 nC Q_rr. This eliminates the need for external anti-parallel diodes in half-bridge and full-bridge topologies used in traction inverters and OBCs.

How is the source-sensing pin (Pin 2) implemented in PCB layout?

Pin 2 must be routed separately from the main power source terminals (Pins 3–7) using a dedicated low-current trace to the gate driver's source reference node. It should not share copper pour or vias with high-current source paths to avoid IR drop contamination and ensure accurate gate control loop performance.

What thermal interface material is recommended for the H²PAK-7 TAB?

A high-thermal-conductivity (≥3 W/m·K), low-viscosity thermal paste or phase-change pad is recommended to fill microscopic voids between the exposed copper TAB and liquid-cooled cold plate. ST specifies minimum solder coverage ≥90 % for reflow mounting; mechanical clamping is not supported for this package.

SCT012H90G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 15.8mOhm @ 60A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:: 138 nC @ 18 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 3880 pF @ 600 V

FET Feature:: -

Power Dissipation (Max):: 625W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-7

SCT012H90G3AG FAQ

1.How can I place an order for SCT012H90G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT012H90G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT012H90G3AG reliable?

The price and inventory of SCT012H90G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT012H90G3AG is usually 5 days.

3.What payment methods are accepted for SCT012H90G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT012H90G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT012H90G3AG?

SCT012H90G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT012H90G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT012H90G3AG?

For technical support, including SCT012H90G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT012H90G3AG requirements.

6.How does Aetrix verify that SCT012H90G3AG is sourced from the original manufacturer or authorized distributors?

All SCT012H90G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT012H90G3AG meets industry standards.

7.What is the process for return or replacement of SCT012H90G3AG?

All SCT012H90G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT012H90G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT012H90G3AG part is unused and in its original packaging.

Return procedure for SCT012H90G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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