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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA40N12G24AG

Name: SCTWA40N12G24AG
Brand: STMicroelectronics
SKU: SCTWA40N12G24AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA40N12G24AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: SCTWA40N12G24AG.pdf

Description:: TO247-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCTWA40N12G24AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide Power MOSFET designed for high-voltage, high-efficiency traction inverters and on-board chargers in electric vehicles. It delivers 1200 V drain-source voltage, 75 mΩ typical R_DS(on) at 18 V gate drive, 33 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, air-cooled EV power stages.

For engineers reviewing the SCTWA40N12G24AG datasheet, SCTWA40N12G24AG pinout, SCTWA40N12G24AG application, or SCTWA40N12G24AG equivalent, key selection criteria include its low 63 nC total gate charge, 10 ns typical reverse recovery time, source-sensing configuration for precise current control, and HiP247-4 package with isolated driver-source terminal for enhanced gate drive stability in high-dV/dt environments.

Technical Context

This SiC MOSFET employs ST's second-generation trench-gate technology, delivering stable switching energy across temperature (E_on = 235 µJ, E_off = 77 µJ at 800 V/20 A) and near-temperature-independent R_DS(on) drift. Its intrinsic body diode exhibits 3.4 V forward voltage at 20 A and only 132 nC Q_rr, eliminating need for external anti-parallel Si diodes in bidirectional topologies.

The device integrates a dedicated source-sensing pin (pin 3) separate from power source (pin 2), enabling Kelvin-connected gate drive that rejects PCB trace inductance effects and maintains consistent turn-on/turn-off timing under high-current transients - critical for parallel operation and multi-level inverter leg balancing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC-link systems with ≥50 % voltage margin for surge and transient immunity in EV traction applications.
R_DS(on) max	105 mΩ at V_GS = 18 V, I_D = 20 A, T_J = 25 °C - enables <1.6 W conduction loss at 40 A, reducing heatsink size in OBC and DC/DC converters.
I_D cont.	33 A at T_C = 25 °C; derates to 25 A at T_C = 100 °C - supports sustained 30–40 kW inverter output with forced-air cooling.
Q_g	63 nC - reduces gate driver power demand and allows use of cost-effective 2–4 A peak drivers without excessive thermal stress.
t_rr	10 ns - minimizes commutation losses and eliminates hard-switching-induced voltage spikes in ZVS/ZCS resonant converters.
T_J max	200 °C - permits operation in high-ambient under-hood environments without derating, improving system power density.
R_thJC	0.6 °C/W - enables direct mounting to cold plates for <1.5 °C/W total thermal path in automotive-grade thermal designs.

Pinout & Package

Package: HiP247-4 - thermally optimized 4-pin variant of ST's high-power HiP247 family, featuring isolated driver-source (Kelvin source) terminal and extended creepage/clearance for 1200 V isolation compliance.

Pin/Terminal	Circuit Role	Design Meaning
1, TAB (Drain)	Main power drain connection	Exposed metal tab serves as primary heat sink interface and high-current return path; electrically tied to drain potential.
2 (Power Source)	Power source (source return)	Carries full load current; used for main source connection in low-side switch configuration.
3 (Driver Source)	Kelvin source sensing	Provides gate driver reference point isolated from power loop inductance - ensures accurate V_GS control during fast switching.
4 (Gate)	Gate control input	Receives gate drive signal; requires low-inductance routing to Driver Source (pin 3) to maintain switching fidelity.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use including temperature cycling, HTRB, and UIS testing per JESD22-A108 and A111 standards.
Source sensing pin	Enables true Kelvin gate drive, reducing effective gate resistance impact and improving dV/dt immunity by >40 % vs. 3-pin packages.
Low C_iss/C_oss	1230 pF / 56 pF at 800 V - minimizes Miller effect and improves hard-switching robustness in 10–50 kHz traction inverter operation.
Robust intrinsic SiC diode	10 ns t_rr, 132 nC Q_rr, 20 A I_RRM - supports synchronous rectification in bidirectional DC/DC converters without external diode.
High T_J capability	200 °C rated junction temperature - allows 30–50 K higher ambient operation than standard Si MOSFETs, reducing cooling system mass and cost.

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive stage in battery electric vehicles (BEVs), operating at 400–800 V DC-link with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side SiC MOSFET in three-phase bridge leg, switching at 15 kHz with 100 A peak phase current.

Use Value: Enables >99 % inverter efficiency at 150 kW output while maintaining <100 °C case temperature using passive cooling.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) topology for 11 kW AC/DC + DC/DC conversion in plug-in hybrid vehicles.

IC Role / Device Role / Timing Role: High-frequency switching element in DAB half-bridge, operating at 100–200 kHz with zero-voltage switching.

Use Value: Reduces transformer size by 40 % and eliminates snubber losses due to ultra-low Q_gd (20 nC) and soft reverse recovery.

DC/DC Converter for HEV

Traction Auxiliary Power Module

Use Scenario: Isolated 400 V to 12 V/48 V bi-directional converter supplying 12 V loads and charging 48 V mild-hybrid battery.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge, handling 25 A RMS current with 500 ns dead-time control.

Use Value: Achieves 97.5 % peak efficiency at 5 kW with <2.5 W gate drive loss, enabled by 63 nC Q_g and 0.6 °C/W R_thJC.

Use Scenario: Compact auxiliary inverter powering HVAC compressor, steering pump, and brake booster in 800 V BEV architecture.

IC Role / Device Role / Timing Role: Medium-power SiC switch in 3-phase inverter driving 10 kW PMSM motor at 8–12 kHz.

Use Value: Supports 200 °C junction operation in confined under-hood space, eliminating need for liquid cooling in auxiliary subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065120K	1200 V, 65 mΩ typ., 42 A, TO-247-4L package; higher R_DS(on) tempco and no source-sense pin.	Lacks Kelvin source - requires careful gate loop layout to avoid oscillation in >100 A parallel configurations.	Preferred where maximum current density is prioritized over gate drive stability in single-device designs.
ROHM SCT3105KL	1200 V, 105 mΩ typ., 30 A, TO-247-4L; lower Q_g (55 nC) but higher C_oss (75 pF) and 175 °C T_J max.	Lower thermal rating limits use in high-ambient under-hood locations without active cooling.	Better suited for space-constrained industrial SMPS where ambient <85 °C and switching frequency >150 kHz.

Compared with C3M0065120K and SCT3105KL, SCTWA40N12G24AG uniquely combines AEC-Q101 qualification, 200 °C operation, and integrated source-sensing - making it the only option validated for production traction inverters requiring both reliability and layout robustness in high-dI/dt environments.

Availability

SCTWA40N12G24AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for SCTWA40N12G24AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's Automotive-grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in electric mobility systems - emphasizing ruggedness, thermal resilience, and AEC-Q101 compliance from wafer to final test.

FAQ

What is the purpose of the driver source (pin 3) in the HiP247-4 package?

The driver source (pin 3) provides a Kelvin connection to the MOSFET source, isolating the gate driver reference from high-current power source (pin 2) paths. This eliminates voltage drop errors caused by PCB trace inductance during fast switching, ensuring accurate V_GS control and preventing unintended turn-off in high-dI/dt applications like traction inverters.

Can SCTWA40N12G24AG replace silicon IGBTs in existing 1200 V inverter designs?

Yes - with gate drive redesign. Its 18 V recommended V_GS, 63 nC Q_g, and 10 ns t_rr require lower-impedance gate drivers and tighter layout versus IGBTs. Thermal design benefits significantly: R_thJC = 0.6 °C/W and 200 °C T_J allow smaller heatsinks, but layout must accommodate faster switching edges and reduced Miller capacitance.

Is the intrinsic body diode suitable for bidirectional conduction in a dual-active-bridge converter?

Yes - the SiC body diode delivers 3.4 V V_SD at 20 A and only 10 ns t_rr with 132 nC Q_rr, enabling efficient synchronous rectification without external diodes. Its performance remains stable up to 200 °C, supporting high-frequency (>100 kHz) zero-voltage switching in DAB topologies with minimal reverse recovery loss.

What is the maximum safe operating area (SOA) limitation at T_C = 100 °C and 800 V V_DS?

At T_C = 100 °C and V_DS = 800 V, the device supports ≤25 A continuous drain current per datasheet Figure 1 (SOA curve). Pulse operation up to 100 A is permitted for ≤100 µs, limited by R_DS(on) heating and secondary breakdown boundaries - verified via transient thermal impedance modeling in Figure 2.

SCTWA40N12G24AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1230 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 290W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

SCTWA40N12G24AG FAQ

1.How can I place an order for SCTWA40N12G24AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA40N12G24AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA40N12G24AG reliable?

The price and inventory of SCTWA40N12G24AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA40N12G24AG is usually 5 days.

3.What payment methods are accepted for SCTWA40N12G24AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA40N12G24AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA40N12G24AG?

SCTWA40N12G24AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA40N12G24AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA40N12G24AG?

For technical support, including SCTWA40N12G24AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA40N12G24AG requirements.

6.How does Aetrix verify that SCTWA40N12G24AG is sourced from the original manufacturer or authorized distributors?

All SCTWA40N12G24AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA40N12G24AG meets industry standards.

7.What is the process for return or replacement of SCTWA40N12G24AG?

All SCTWA40N12G24AG units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA40N12G24AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA40N12G24AG part is unused and in its original packaging.

Return procedure for SCTWA40N12G24AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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