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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
DIF120SIC053 SIC MOSFET, TO-247-4L, N, 65A, 1 Diotec Semiconductor	5,228	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	+18V, -4V	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
PJMH042N60FRC_T0_00201 600V 42mohm 69A SJ MOSFET Panjit International Inc.	4,737	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies	6,000	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47A (Tc)	-	-	1.6V @ 4.2mA	7.7 nC @ 3 V	-10V	540 pF @ 400 V	-	154W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
G3F33MT06L-TR 650V 27M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	5,791	RFQ	-	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	90A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies	8,956	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	44A (Tc)	-	-	1.6V @ 4.2mA	-	-10V	540 pF @ 400 V	-	134W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
IPQC60R017S7AXTMA1 MOSFET Infineon Technologies	9,407	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IMZA65R026M2HXKSA1 IMZA65R026M2HXKSA1 Infineon Technologies	2,166	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
SCT070W120G3-4AG TO247-4 STMicroelectronics	4,612	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	41 nC @ 18 V	+18V, -5V	900 pF @ 850 V	-	236W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
SCT070HU120G3AG HU3PAK STMicroelectronics	6,560	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	37 nC @ 18 V	+22V, -10V	900 pF @ 850 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	HU3PAK
E3M0120090J-TR SIC, MOSFET, 120M, 900V, TO-263- Wolfspeed, Inc.	8,967	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	900 V	22A (Tc)	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	18 nC @ 15 V	+15V, -4V	414 pF @ 600 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
IMT65R022M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,152	RFQ	Datasheet	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	-	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-2
DMWSH120H43SM3 SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	6,863	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72.7A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	105 nC @ 15 V	+19V, -8V	2187 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
DMWSH120H43SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	2,860	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	72.7A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	105 nC @ 15 V	+19V, -8V	2187 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT040W120G3-4 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	7,708	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies	3,963	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	61A (Tc)	-	-	1.6V @ 6.1mA	11 nC @ 3 V	-10V	780 pF @ 400 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies	2,691	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	67A (Tc)	-	-	1.6V @ 6.1mA	11 nC @ 3 V	-10V	780 pF @ 400 V	-	219W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
SCTWA40N120G2V DISCRETE STMicroelectronics	7,567	RFQ	Datasheet	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+18V, -5V	1233 pF @ 800 V	-	278W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247 Long Leads
SCTWA40N120G2V-4 DISCRETE STMicroelectronics	3,763	RFQ	-	-	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+18V, -5V	1233 pF @ 800 V	-	277W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247-4
SCT040H120G3AG H2PAK-7 STMicroelectronics	2,115	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V, 18V	54mOhm @ 16A, 18V	4.2V @ 5mA	54 nC @ 18 V	+18V, -5V	1329 pF @ 800 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
SCT040HU120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	5,288	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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