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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040W120G3-4

Name: SCT040W120G3-4
Brand: STMicroelectronics
SKU: SCT040W120G3-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040W120G3-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT040W120G3-4.pdf

Description:: SILICON CARBIDE POWER MOSFET 120

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT040W120G3-4 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency switching in demanding power conversion stages. It delivers 1200 V drain-source breakdown voltage, 40 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, 40 A continuous drain current, and operates up to 200 °C junction temperature - enabling compact, high-frequency DC-DC converters and renewable energy inverters.

For engineers reviewing the SCT040W120G3-4 datasheet, SCT040W120G3-4 pinout, SCT040W120G3-4 application, or SCT040W120G3-4 equivalent, this page provides verified SiC MOSFET specifications, HiP247-4 terminal mapping, thermal performance data, intrinsic diode recovery metrics, and validated alternatives for high-power industrial and energy systems.

Technical Context

This 3rd-generation ST SiC MOSFET uses planar gate technology optimized for low gate charge (Q_g = 56 nC) and minimal capacitance (C_iss = 1329 pF, C_oss = 78 pF), enabling fast switching with E_on = 273 µJ and E_off = 100 µJ at 800 V/16 A. Its body diode exhibits ultra-fast reverse recovery (t_rr = 16 ns, Q_rr = 100 nC) and low forward voltage (V_SD = 2.6 V at 16 A).

The device supports robust operation across -55 °C to 200 °C with stable R_DS(on) (77 mΩ max at T_J = 200 °C) and gate threshold (V_GS(th) = 1.8–4.2 V), while maintaining safe operating area integrity up to 179 A pulsed current and 1200 V blocking under transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables direct use in 1000 V-class DC bus systems without series stacking.
R_DS(on) typ.	40 mΩ at V_GS = 18 V, T_J = 25 °C - Delivers <1.6 W conduction loss at 20 A, reducing heatsink requirements.
I_D cont.	40 A at T_C = 25 °C and 100 °C - Package-limited rating ensures consistent output across wide ambient range.
t_rr / Q_rr	16 ns / 100 nC - Minimizes diode commutation losses and EMI in hard-switched topologies.
R_thJC	0.56 °C/W - Enables >300 W power dissipation with modest case-to-heatsink thermal interface.
Q_g	56 nC - Supports efficient gate driving at >100 kHz with moderate gate resistor values (e.g., 12 Ω).
T_J max	200 °C - Allows derating-free operation in high-temperature enclosures or forced-air-limited designs.

Pinout & Package

Supplied in the HiP247-4 surface-mount-compatible through-hole package with isolated tab, featuring four terminals optimized for high-current, low-inductance PCB layouts and direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pin 1 & Tab)	Main power return path	Electrically connected to metal tab - must be mounted to heatsink with electrically isolating thermal interface.
Gate (Pin 4)	Control input	Low-impedance gate terminal requiring <±22 V rating; sensitive to ringing due to low C_iss/C_rss ratio.
Driver Source (Pin 3)	Reference for gate driver	Separate Kelvin source connection minimizes gate loop inductance and improves switching stability.
Power Source (Pin 2)	Main current return	Carries full load current; routed separately from Driver Source to avoid source inductance coupling into gate loop.

Key Features

Feature	Design Value
Ultra-low R_DS(on) over full temperature range	R_DS(on) increases only ~1.6× from 25 °C to 200 °C (vs. >3× for Si MOSFETs), preserving efficiency at elevated temperatures.
Very fast intrinsic body diode	t_rr = 16 ns with soft recovery reduces voltage overshoot and snubber losses in bridge-leg commutation.
High-speed switching with low E_sw	E_on + E_off = 373 µJ at 800 V/16 A enables >150 kHz operation in LLC and phase-shifted full-bridge converters.
200 °C maximum junction temperature	Enables higher power density by relaxing thermal margin constraints and supporting smaller heatsinks or passive cooling.
Kelvin source configuration (HiP247-4)	Separate Driver Source and Power Source pins eliminate source inductance impact on gate control, improving turn-on consistency.

Applications

Industrial UPS Systems

Photovoltaic String Inverters

Use Scenario: High-efficiency DC-AC inversion stage in 1000 V+ PV string inverters with transformerless topology.

IC Role / Device Role / Timing Role: Primary high-side switching element in three-phase NPC or T-type inverter leg, operating at 30–50 kHz.

Use Value: Low C_oss and fast t_rr reduce reactive losses during zero-voltage switching transitions, increasing system efficiency by ≥0.5% at full load.

Use Scenario: Bidirectional DC-DC stage in hybrid solar-battery storage systems interfacing 800–1000 V battery banks.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) converter, handling 40 A continuous bidirectional current.

Use Value: Stable R_DS(on) up to 200 °C allows sustained 40 A operation without thermal throttling, enabling smaller magnetics and reduced system volume.

Server & Telecom PSU

EV Onboard Charger (OBC)

Use Scenario: Primary-side switch in high-density 3.3 kW server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch with integrated body diode conducting freewheeling current during dead time.

Use Value: 2.6 V V_SD and 16 ns t_rr cut body diode conduction losses by >40% vs. Si superjunction MOSFETs, improving light-load efficiency.

Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 400–800 V HV battery pack.

IC Role / Device Role / Timing Role: High-reliability switching device in dual-phase interleaved LLC resonant converter operating at 200–300 kHz.

Use Value: 0.56 °C/W R_thJC enables >97% peak efficiency while meeting automotive AEC-Q101 thermal cycling requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040120K (Wolfspeed)	Same 1200 V/40 mΩ rating but higher Q_g (62 nC) and slower t_rr (22 ns); TO-247-4L package with different pinout.	Larger gate drive energy requirement; less suitable for >200 kHz operation with tight layout constraints.	Prefer when legacy TO-247-4L footprint compatibility is required and gate drive capability exceeds 2 A peak.
IXFH40N120X2 (IXYS)	1200 V/42 mΩ, but rated only to 175 °C T_J; higher R_thJC (0.75 °C/W); no Kelvin source configuration.	Requires larger heatsink and more conservative thermal design; lacks driver-source isolation for high-dV/dt immunity.	Select where cost sensitivity outweighs thermal density targets and gate drive simplicity is prioritized over switching speed.

Compared with C3M0040120K and IXFH40N120X2, SCT040W120G3-4 offers superior thermal resistance, lower gate charge, faster body diode recovery, and Kelvin source architecture - making it optimal for high-frequency, high-power-density designs where layout-induced oscillation and thermal management are critical.

Availability

SCT040W120G3-4 is available at Aetrix Electronics and suitable for photovoltaic inverters, EV onboard chargers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SCT040W120G3-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with strong manufacturing and R&D infrastructure across Europe and Asia.

This device belongs to ST's 3rd-generation SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV charging, and industrial motor drives.

FAQ

What gate drive voltage is recommended for reliable operation?

The recommended gate drive voltage range is -5 V to +18 V, with a minimum turn-on threshold of 1.8 V and maximum transient rating of +25 V for ≤1 µs pulses. Driving at +15 V achieves 49 mΩ R_DS(on), while +18 V yields the specified 40 mΩ typ. Negative gate bias prevents spurious turn-on during high dV/dt events in bridge configurations.

Does this MOSFET require an external anti-parallel diode?

No. The SCT040W120G3-4 integrates a robust intrinsic SiC body diode with 16 ns reverse recovery time and 100 nC Q_rr, enabling reliable synchronous rectification and hard-commutated freewheeling without external diodes in most topologies including totem-pole PFC and three-level inverters.

How does the HiP247-4 package differ from standard TO-247-4L?

HiP247-4 features a reinforced internal leadframe, enhanced creepage/clearance, and optimized thermal path from die to tab. Unlike TO-247-4L, its Pin 3 (Driver Source) is electrically isolated from Pin 2 (Power Source), enabling true Kelvin source sensing and eliminating source inductance effects on gate control loop stability.

What is the maximum allowable gate resistor value for 100 kHz switching?

With Q_g = 56 nC and typical gate driver output capability of ±2 A, a 12 Ω gate resistor limits peak current to ~1.7 A and achieves ~100 ns rise/fall times - sufficient for stable 100 kHz operation. Values above 15 Ω increase switching losses significantly; below 8 Ω may cause ringing without proper layout control.

SCT040W120G3-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT040W120G3-4 FAQ

1.How can I place an order for SCT040W120G3-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040W120G3-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040W120G3-4 reliable?

The price and inventory of SCT040W120G3-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040W120G3-4 is usually 5 days.

3.What payment methods are accepted for SCT040W120G3-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040W120G3-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040W120G3-4?

SCT040W120G3-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040W120G3-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040W120G3-4?

For technical support, including SCT040W120G3-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040W120G3-4 requirements.

6.How does Aetrix verify that SCT040W120G3-4 is sourced from the original manufacturer or authorized distributors?

All SCT040W120G3-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040W120G3-4 meets industry standards.

7.What is the process for return or replacement of SCT040W120G3-4?

All SCT040W120G3-4 units undergo pre-shipment inspection (PSI). If there is an issue with SCT040W120G3-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040W120G3-4 part is unused and in its original packaging.

Return procedure for SCT040W120G3-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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