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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGOT65R035D2AUMA1

Name: IGOT65R035D2AUMA1
Brand: Infineon Technologies
SKU: IGOT65R035D2AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGOT65R035D2AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-BFSOP (0.295", 7.50mm Width)

Datasheet:: IGOT65R035D2AUMA1.pdf

Description:: IGOT65R035D2AUMA1

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Product details

Overview

IGOT65R035D2AUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-DSO-20 package, with R_DS(on) = 35 mΩ (typ), Q_G = 7.7 nC, and Q_oss = 57 nC @ 400 V. It delivers ultra-fast switching, zero reverse-recovery charge, and reverse conduction capability for high-frequency hard- and soft-switching topologies including totem-pole PFC and LLC resonant converters in datacenter SMPS.

For engineers reviewing the IGOT65R035D2AUMA1 datasheet, IGOT65R035D2AUMA1 pinout, IGOT65R035D2AUMA1 application, or IGOT65R035D2AUMA1 equivalent, key selection criteria include its 650 V V_DS,max, 97 A pulsed drain current, Kelvin source configuration, 2 kV HBM ESD rating, and thermal resistance R_thJC = 0.94 °C/W - all critical for high-power-density, thermally constrained designs.

Technical Context

This CoolGaN™ G5 device operates as a normally-off, enhancement-mode GaN HEMT optimized for high-voltage, high-frequency switching. Its gate threshold voltage (V_GS(th) = 0.9–1.6 V) and low gate resistance (R_G,int = 1.4 Ω) enable precise timing control with standard 5 V logic-level drivers, while the integrated Kelvin source (Pin 8) decouples gate loop from power loop to suppress common-source inductance effects.

The device features no body diode reverse recovery (Q_rr = 0 nC), enabling lossless synchronous rectification and bidirectional conduction without shoot-through risk. Its C_oss,er = 105 pF and C_oss,tr = 142 pF reflect energy- and time-related output capacitance behavior essential for ZVS/ZCS design validation in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - supports DC bus operation up to 400 V with margin for transient surges (750 V pulsed).
R_DS(on),typ	35 mΩ - enables low conduction loss at 13 A, critical for <1% efficiency degradation in 3–10 kW systems.
Q_G	7.7 nC - reduces gate drive power and allows use of compact, low-current gate drivers (e.g., 1–2 A peak).
Q_oss @ 400 V	57 nC - defines turn-off energy loss and ZVS boundary condition in LLC and phase-shifted full-bridge converters.
t_d(on)/t_d(off)	11 ns / 15 ns - enables >1 MHz switching with minimal dead-time overhead and reduced voltage spikes.
R_thJC	0.94 °C/W - permits direct heatsink mounting and supports >100 W/cm² power density in compact SMD layouts.
ESD Rating	2 kV HBM - ensures robust handling during PCB assembly and system integration without special ESD protocols.

Pinout & Package

IGOT65R035D2AUMA1 uses the PG-DSO-20 surface-mount package with exposed thermal pad (heatslug). Pin assignment is validated per Infineon's official datasheet Rev. 1.0 (2024‑10‑24): Drain terminals are pins 13–18; Gate is on pins 9 and 10; Source connects to pins 1–7 and the heatslug; Kelvin Source is pin 8; pins 11–12 and 19–20 are NC.

Pin/Terminal	Circuit Role	Design Meaning
Pins 13–18	Drain	Main high-side power path; parallel connection reduces current density and parasitic inductance.
Pins 9, 10	Gate	Dual gate inputs reduce gate loop inductance and improve switching consistency under high dv/dt.
Pins 1–7 + Heatslug	Source (Power)	Primary return path; heatslug provides primary thermal conduction to PCB copper or heatsink.
Pin 8	Kelvin Source	Reference node for gate driver feedback - eliminates source inductance impact on V_GS control accuracy.
Pins 11–12, 19–20	No Connect	Unused internal die pads; must remain unconnected to avoid unintended coupling or reliability risk.

Key Features

Feature	Design Value
Ultra-fast switching with t_r/t_f ≤ 11 ns	Enables >1 MHz operation in LLC and totem-pole PFC while maintaining <5% switching loss share at full load.
No reverse-recovery charge (Q_rr = 0 nC)	Eliminates diode recovery losses and associated EMI, allowing true synchronous rectification without snubbers.
Capable of reverse conduction	Supports bidirectional current flow in active clamp, resonant, and matrix converter topologies without external anti-parallel diodes.
2 kV HBM ESD rating	Reduces need for on-board ESD protection components and simplifies handling in automated SMT lines.
Narrow production tolerances (200 mm wafer process)	Ensures <±8% R_DS(on) variation across lots - critical for paralleling multiple devices without current imbalance.

Applications

Datacenter LLC Resonant Converter

Totem-Pole PFC Stage

Use Scenario: High-efficiency 3.3 kW server PSU operating at 700 kHz with ZVS over full load range.

IC Role / Device Role / Timing Role: Primary-side GaN switch in half-bridge LLC topology, delivering precise zero-voltage switching timing via low-Q_G and fast t_d(on)/t_d(off).

Use Value: Achieves >98% peak efficiency and 40 W/in³ power density by minimizing switching and conduction losses simultaneously.

Use Scenario: 3.5 kW telecom rectifier using interleaved totem-pole PFC with digital control.

IC Role / Device Role / Timing Role: High-side GaN switch performing bidirectional conduction and hard-switching at 150–300 kHz.

Use Value: Enables unity power factor and <0.9% THD without boost diode losses, reducing heatsink mass by 35%.

High-Frequency Adapter

Industrial Motor Drive Inverter

Use Scenario: 120 W ultra-thin laptop adapter with 100 kHz–1 MHz variable-frequency operation.

IC Role / Device Role / Timing Role: Primary switch in QR flyback with GaN-specific gate drive, leveraging low C_oss for extended ZVS range.

Use Value: Reduces transformer size by 50% and eliminates snubber losses, enabling 15 mm profile design.

Use Scenario: 7.5 kW servo drive inverter stage requiring high dv/dt immunity and thermal stability at 125°C junction.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter, using Kelvin source for accurate gate control under high-current transients.

Use Value: Maintains <1.2% current imbalance across paralleled devices and sustains 150°C T_j with R_thJC-optimized layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V, R_DS(on) = 50 mΩ, Q_G = 10.5 nC, TO-247-4L package, no Kelvin source	Larger footprint, higher gate drive loss, no dedicated Kelvin sensing - limits ZVS margin above 300 kHz	Prefer when board space allows TO-247 and gate drive simplicity outweighs high-frequency optimization needs.
EPC2218	650 V, R_DS(on) = 32 mΩ, Q_G = 5.8 nC, LGA 5×6 mm, no Kelvin source, 1.5 kV HBM	Smaller footprint but lacks Kelvin source and has lower ESD rating - requires tighter layout control for gate noise immunity	Prefer for ultra-compact adapters where thermal budget permits higher R_thJA and gate loop inductance is minimized by layout.

Compared with TPH3205WS and EPC2218, IGOT65R035D2AUMA1 uniquely combines Kelvin source, 2 kV HBM, and PG-DSO-20 thermal performance - making it optimal for industrial and datacenter designs demanding both high reliability and >500 kHz operation.

Availability

IGOT65R035D2AUMA1 is available at Aetrix Electronics and suitable for datacenter SMPS, telecom rectifiers, and high-frequency AC-DC adapters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IGOT65R035D2AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolGaN™ G5 product line, engineered specifically for high-efficiency, high-frequency power conversion in 650 V applications - targeting next-generation server PSUs, EV chargers, and compact industrial power supplies.

FAQ

What is the maximum recommended continuous drain current for IGOT65R035D2AUMA1?

The datasheet specifies I_D,cont = 44 A at T_C = 25°C. This value assumes ideal heatsinking and derating per JEDEC JEP198 guidelines. At T_C = 100°C, the practical limit drops to ~28 A due to thermal resistance (R_thJC = 0.94 °C/W) and safe operating area constraints. Designers must verify SOA compliance using the repetitive safe operating area curves in Figure 5 and 6.

Does IGOT65R035D2AUMA1 require negative gate voltage for reliable turn-off?

No. The device is enhancement-mode with V_GS(th) = 0.9–1.6 V and specified gate drive range of –10 V to +10 V (continuous) and –25 V to +25 V (pulsed). While –5 V to –10 V gate bias improves noise immunity and dV/dt ruggedness, it is not required for functional turn-off - 0 V gate is sufficient to maintain V_GS below threshold under normal conditions.

Can IGOT65R035D2AUMA1 be paralleled with identical units without external current-sharing components?

Yes - provided layout symmetry, matched gate drive paths, and thermal coupling are maintained. The narrow R_DS(on) tolerance (<±8%) and positive temperature coefficient of R_DS(on) (increasing with T_j) enable inherent current balancing. However, Kelvin source routing must be identical per device to prevent gate control mismatch, and gate resistors should be individually tuned to match propagation delays.

Is the heatslug electrically isolated from other terminals in IGOT65R035D2AUMA1?

No. The heatslug is internally connected to the Source terminal (pins 1–7), forming the main power return path. It must be soldered to a grounded or source-referenced copper plane on the PCB. Electrical isolation requires a thermally conductive but electrically insulating interface (e.g., ceramic thermal pad or isolating thermal paste) if the heatsink is at a different potential.

IGOT65R035D2AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-BFSOP (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 4.2mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 134W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-91

IGOT65R035D2AUMA1 FAQ

1.How can I place an order for IGOT65R035D2AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGOT65R035D2AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGOT65R035D2AUMA1 reliable?

The price and inventory of IGOT65R035D2AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGOT65R035D2AUMA1 is usually 5 days.

3.What payment methods are accepted for IGOT65R035D2AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGOT65R035D2AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGOT65R035D2AUMA1?

IGOT65R035D2AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGOT65R035D2AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGOT65R035D2AUMA1?

For technical support, including IGOT65R035D2AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGOT65R035D2AUMA1 requirements.

6.How does Aetrix verify that IGOT65R035D2AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGOT65R035D2AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGOT65R035D2AUMA1 meets industry standards.

7.What is the process for return or replacement of IGOT65R035D2AUMA1?

All IGOT65R035D2AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGOT65R035D2AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGOT65R035D2AUMA1 part is unused and in its original packaging.

Return procedure for IGOT65R035D2AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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