STMicroelectronics SCT070W120G3-4AG

Overview

SCT070W120G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET designed for high-voltage, high-efficiency traction inverters and on-board chargers in electric vehicles. It delivers 1200 V drain-source voltage rating, 63 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, 30 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling compact, thermally robust EV power stages.

For engineers reviewing the SCT070W120G3-4AG datasheet, SCT070W120G3-4AG pinout, SCT070W120G3-4AG application, or SCT070W120G3-4AG equivalent, this page provides verified SiC MOSFET specifications including gate charge (41 nC), output capacitance (40 pF), reverse recovery time (15 ns), thermal resistance (0.74 °C/W), and HiP247-4 package terminal mapping - all critical for inverter layout, gate drive design, and thermal modeling.

Technical Context

This 3rd-generation SiC MOSFET uses ST's trench-gate process to achieve low R_DS(on) temperature coefficient (R_DS(on) × 2.2× at T_J = 200 °C vs. 25 °C) and stable threshold voltage (V_GS(th) = 1.8–4.2 V) across -75 °C to +200 °C. Its intrinsic body diode supports bidirectional conduction with 15 ns t_rr and 75 nC Q_rr, eliminating need for external anti-parallel Si diodes in hard-switched topologies.

The HiP247-4 package integrates a dedicated driver source (pin 3) separate from power source (pin 2), enabling Kelvin-source sensing to eliminate source inductance effects during high-dI/dt switching. Gate input resistance is 1.5 Ω, supporting fast, low-loss turn-on/turn-off with minimal external gate resistor tuning.

Key Specifications

Pinout & Package

Package: HiP247-4 - 4-terminal high-power package with isolated driver source (Kelvin) for accurate gate control and minimized source inductance-induced oscillation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and IXFH40N120X2, SCT070W120G3-4AG uniquely combines AEC-Q101 certification, 200 °C operation, and HiP247-4 Kelvin-source packaging - making it the only option validated for production-grade 800 V traction inverters requiring long-term reliability under thermal stress.

Availability

SCT070W120G3-4AG is available at Aetrix Electronics and suitable for electric traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, automotive-grade traceability, and long-lifecycle support.

Supply support for SCT070W120G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STPOWER SiC portfolio - engineered specifically for high-efficiency, high-reliability EV power conversion systems where thermal resilience, switching speed, and automotive qualification are mandatory.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is -10 V to +22 V, but ST specifies recommended operating values of -5 V to +18 V. Exceeding +18 V risks oxide degradation over lifetime, while gate drive below -5 V may cause incomplete turn-off during transients. For robustness, a ±5 V/15 V gate drive with 100 ns fall time is validated in application note AN5327.

Does the HiP247-4 package require special PCB layout considerations?

Yes: the driver source (pin 3) must be routed separately from power source (pin 2) with minimal loop area to the gate driver IC ground. ST recommends ≤2 mm trace length between pin 3 and driver ground, and isolation of pin 2 from gate drive return paths to avoid coupling noise into the gate loop.

How does the body diode performance compare to discrete SiC Schottky diodes?

The intrinsic body diode achieves 15 ns t_rr and 75 nC Q_rr at 15 A - matching performance of 1200 V SiC Schottkys like C4D10120D. Unlike discrete diodes, it shares the same die and thermal path, eliminating thermal mismatch and enabling synchronous rectification without additional footprint.

Is derating required for continuous operation at 200 °C junction temperature?

No derating is needed for T_J ≤ 200 °C - the device is fully characterized and qualified up to this limit. However, system-level derating applies: at T_C = 100 °C, I_D is rated 29 A (not 30 A), and R_DS(on) rises to 138 mΩ at T_J = 200 °C, increasing conduction loss by 2.2× versus room temperature.