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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPQC60R017S7AXTMA1

Name: IPQC60R017S7AXTMA1
Brand: Infineon Technologies
SKU: IPQC60R017S7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPQC60R017S7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPQC60R017S7AXTMA1.pdf

Description:: MOSFET

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Product details

Overview

IPQC60R017S7AXTMA1 from Infineon Technologies is a 600 V, 17 mΩ superjunction MOSFET in PG-HDSOP-22 (QDPAK) package with Kelvin Source configuration, designed as a high-current static switch for low-frequency HV applications including HV battery disconnect switches and AC/DC circuit breakers. It delivers 491 A pulsed drain current, features 196 nC total gate charge, and integrates an internal body diode with 0.82 V forward voltage.

For engineers reviewing the IPQC60R017S7AXTMA1 datasheet, IPQC60R017S7AXTMA1 pinout, IPQC60R017S7AXTMA1 application, or IPQC60R017S7AXTMA1 equivalent, key selection criteria include R_DS(on) stability at 150 °C, dv/dt ruggedness up to 20 V/ns, Kelvin Source layout requirements, and AEC-Q101 qualification for automotive-grade reliability in high-voltage power switching.

Technical Context

This device implements Infineon's CoolMOS™ SJ S7A technology, using charge compensation in the drift region to achieve ultra-low R_DS(on) while maintaining 600 V blocking capability. Its optimized charge profile-40 nC gate-to-source (Q_gs) and 65 nC gate-to-drain (Q_gd)-supports controlled turn-on/turn-off transitions under high dV/dt stress.

The PG-HDSOP-22 package integrates a thermally enhanced exposed tab (Drain-connected), dedicated Kelvin Source (Pin 2), and Driver Source (Pins 3–11), enabling low-inductance source return paths critical for stable operation at >30 A DC and 491 A pulsed current. The device is not rated for linear-mode operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports HV DC bus isolation in battery disconnect and industrial breaker systems
R_DS(on), max	17 mΩ @ T_j = 25 °C - enables <3 W conduction loss at 30 A, reducing heatsink size
I_D,pulse	491 A - sustains short-circuit energy handling in fuse-replacement applications
Q_g, typ	196 nC - defines gate drive power requirement for 100 kHz switching in low-freq HV control
V_SD	0.82 V @ I_F = 29 A - lowers reverse conduction loss vs. standard silicon diodes in synchronous rectification
dv/dt ruggedness	20 V/ns - ensures reliable operation without spurious turn-on during fast voltage transients
T_j,max	175 °C (limited duration) - extends thermal margin in sealed enclosure designs

Pinout & Package

IPQC60R017S7AXTMA1 uses the PG-HDSOP-22 (QDPAK) surface-mount package with bottom-side cooling, MSL1 reflow compatibility, and Pb-free construction. The exposed copper tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed)	Drain	Main high-voltage power path; thermally coupled to PCB copper for efficient heat extraction
Pins 12–22	Drain	Parallel drain connections reduce current density and bond wire inductance
Pin 1	Gate	Control input; requires external gate resistor placed on Driver Source (not Gate) for paralleling
Pin 2	Kelvin Source	Reference node for gate driver feedback; must not be swapped with Driver Source
Pins 3–11	Driver Source	Power return path for gate driver; carries high di/dt but not sensing current

Key Features

Feature	Design Value
Kelvin Source configuration	Separates sensing and power return paths to reduce gate loop inductance by >50%, minimizing ringing at >100 A/µs di/dt
S7A superjunction process	Delivers 17 mΩ R_DS(on) in QDPAK footprint-30% lower area than prior-gen 600 V MOSFETs at same R_DS(on)
AEC-Q101 qualified	Validated for automotive HV battery systems including e-fuse and contactor replacement
Low Q_gd/Q_g ratio	65 nC / 196 nC = 0.33 - improves Miller immunity and enables robust hard-switching up to 300 V bus
Body diode with soft recovery	trr = 510 ns, Q_rr = 11.5 µC - reduces EMI and voltage overshoot during commutation vs. fast-recovery diodes

Applications

High-Voltage Battery Disconnect Switch

Circuit Breaker (AC/DC Low-Frequency)

Use Scenario: Isolation of 400–800 V traction battery during crash event or maintenance in EV platforms.

IC Role / Device Role / Timing Role: High-side static switch operating in on/off mode with <10 ms response time and zero standby leakage.

Use Value: Replaces mechanical contactors with solid-state reliability, eliminating arcing and wear while supporting ISO 6469-3 fault response timing.

Use Scenario: Solid-state replacement for electromechanical breakers in industrial UPS and solar inverters.

IC Role / Device Role / Timing Role: Bidirectional HV switching element controlling DC link or AC phase output at ≤1 kHz.

Use Value: Enables arcless interruption, programmable trip curves, and remote diagnostics via integrated current-sense compatibility.

Synchronous Rectifier in HV Bridge

Diode Paralleling in High-Power Rectifiers

Use Scenario: Replacement of 600 V SiC Schottky diodes in secondary-side rectification of 3 kW+ telecom PSUs.

IC Role / Device Role / Timing Role: Actively controlled rectifying switch synchronized to transformer voltage polarity.

Use Value: Reduces conduction loss by 40% vs. 0.82 V diode drop, lowering thermal load on heatsink and improving efficiency at full load.

Use Scenario: Parallel placement with legacy 600 V diodes in 10 kW+ industrial welder front-ends.

IC Role / Device Role / Timing Role: Current-sharing auxiliary switch sharing peak current during transient overload.

Use Value: Extends diode lifetime by limiting peak junction temperature rise during surge events without redesigning magnetics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R017C7	Same 600 V / 17 mΩ rating but in TO-247 package; no Kelvin Source; higher R_thJC (0.35 °C/W)	Lacks Kelvin Source; unsuitable for >200 A peak layouts requiring low-inductance gate control	Select when board space allows through-hole mounting and gate drive layout is less sensitive to source inductance
IPP60R02C7	600 V / 20 mΩ in PG-HDSOP-22; identical pinout but higher R_DS(on); Q_g = 172 nC	Lower cost alternative with 18% higher conduction loss; same thermal and packaging interface	Select when system thermal margin permits 3.5 W extra loss at 30 A, prioritizing BOM cost over peak efficiency

Compared with IPW60R017C7 and IPP60R02C7, IPQC60R017S7AXTMA1 uniquely combines Kelvin Source, lowest R_DS(on) in QDPAK, and AEC-Q101 qualification-making it optimal for space-constrained, high-reliability HV battery and breaker applications demanding minimal gate loop inductance.

Availability

IPQC60R017S7AXTMA1 is available at Aetrix Electronics and suitable for high-voltage battery disconnect switches, industrial circuit breakers, synchronous rectifiers, and diode paralleling applications requiring stable component supply across automotive, energy storage, and industrial power systems.

Supply support for IPQC60R017S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage switching devices.

The CoolMOS™ SJ S7A product line targets high-efficiency, high-reliability HV power conversion where low R_DS(on), rugged dv/dt performance, and compact SMD packaging are critical-especially in automotive battery safety systems and industrial solid-state protection.

FAQ

Can IPQC60R017S7AXTMA1 be used in linear mode operation?

No. The datasheet explicitly prohibits linear-mode operation due to thermal instability risks in the superjunction structure. It is qualified only for switching applications with defined safe operating area boundaries. Operation outside the SOA curves-particularly in the linear region-may cause localized hot-spot formation and premature failure. Designers must ensure gate drive and snubber networks maintain V_DS and I_D within the published SOA limits at all times.

What is the functional difference between Pin 2 (Kelvin Source) and Pins 3–11 (Driver Source)?

Pin 2 is the Kelvin Source reference terminal, connected directly to the MOSFET's internal source metallization for precise gate drive feedback; Pins 3–11 carry high-current source return paths. Swapping them causes gate threshold shift and potential oscillation. Layout must route Pin 2 separately to the gate driver IC ground, while Pins 3–11 connect to bulk PCB ground plane with minimal inductance.

Is IPQC60R017S7AXTMA1 suitable for paralleling multiple units?

Yes, but only with strict layout adherence: gate resistors must be placed on the Driver Source (Pins 3–11), not Gate; individual Kelvin Source traces must remain isolated; and thermal coupling between devices must be balanced. The datasheet warns that improper paralleling-especially misrouting Kelvin Source-leads to current imbalance and thermal runaway. Matching R_DS(on) tolerance (±20%) and gate charge (±15%) is recommended.

Does the AEC-Q101 qualification cover extended temperature operation up to 175 °C?

AEC-Q101 qualification covers the full −40 °C to +150 °C operating range. The 175 °C junction limit is specified for short-duration (≤50 h lifetime) emergency conditions only-not for continuous operation-and falls outside AEC-Q101 test scope. For automotive safety-critical functions, sustained operation must remain within the 150 °C limit validated under AEC-Q101 stress testing.

IPQC60R017S7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 12V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 29A, 12V

Vgs(th) (Max) @ Id:: 4.5V @ 1.89mA

Gate Charge (Qg) (Max) @ Vgs:: 196 nC @ 12 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7370 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22

IPQC60R017S7AXTMA1 FAQ

1.How can I place an order for IPQC60R017S7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPQC60R017S7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPQC60R017S7AXTMA1 reliable?

The price and inventory of IPQC60R017S7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPQC60R017S7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPQC60R017S7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPQC60R017S7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPQC60R017S7AXTMA1?

IPQC60R017S7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPQC60R017S7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPQC60R017S7AXTMA1?

For technical support, including IPQC60R017S7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPQC60R017S7AXTMA1 requirements.

6.How does Aetrix verify that IPQC60R017S7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPQC60R017S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPQC60R017S7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPQC60R017S7AXTMA1?

All IPQC60R017S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPQC60R017S7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPQC60R017S7AXTMA1 part is unused and in its original packaging.

Return procedure for IPQC60R017S7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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