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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R022M1HXUMA1

Name: IMT65R022M1HXUMA1
Brand: Infineon Technologies
SKU: IMT65R022M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R022M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IMT65R022M1HXUMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMT65R022M1HXUMA1 from Infineon is a 650 V, 22 mΩ silicon carbide (SiC) MOSFET in PG-HSOF-8 (TOLL) package with Kelvin source configuration, rated for 79 A continuous drain current at 25 °C and 175 °C maximum junction temperature. It delivers low switching losses via optimized gate charge (Q_G = 67 nC) and fast commutation robustness, targeting high-efficiency power conversion in telecom SMPS and EV charging infrastructure.

For engineers reviewing the IMT65R022M1HXUMA1 datasheet, IMT65R022M1HXUMA1 pinout, IMT65R022M1HXUMA1 application, or IMT65R022M1HXUMA1 equivalent, key selection criteria include its 22 mΩ R_DS(on) at 18 V_GS, 158 nC Q_oss at 400 V, 196 A peak pulsed current, Kelvin-source layout for reduced switching loss, and JEDEC-qualified industrial reliability up to T_j,max = 175 °C.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: higher breakdown field strength, lower conduction and switching losses, and superior thermal conductivity versus silicon. Its gate oxide is qualified for 175 °C operation with enhanced reliability under repeated hard commutation.

The device integrates a Kelvin source terminal (Pin 2) separate from power source (Pins 3–8), enabling accurate gate drive referencing and up to 4× lower switching losses. The internal body diode exhibits low Q_rr (166 nC) and fast recovery (t_fr = 24.7 ns), supporting ZVS and resonant topologies without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC input systems with >2× safety margin against transients.
R_DS(on), typ	22 mΩ at V_GS = 18 V, I_D = 41.1 A, T_j = 25 °C - Delivers low conduction loss in high-current DC/DC stages.
Q_G	67 nC at V_DS = 400 V - Supports efficient gate driving with standard 12–18 V controllers and low driver power demand.
Q_oss	158 nC at V_DS = 400 V - Reduces turn-off energy loss (E_oss = 23.8 μJ), critical for high-frequency LLC and phase-shifted full-bridge designs.
T_j,max	175 °C - Allows compact heatsinking and operation in sealed enclosures without derating at ambient up to 105 °C.
R_th(j–c)	0.40 °C/W - Enables direct mounting to cold plates for high-power density systems (e.g., 3.3 kW OBC modules).
I_D,pulse	196 A - Sustains short-circuit conditions during fault response in UPS and solar inverters.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab for low-inductance, high-current PCB routing and direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Low-inductance, high-current path; electrically connected to all Drain pins; requires solder mask opening and thermal pad on PCB.
Pin 1	Gate	Standard gate input; driven by isolated gate driver with 18 V max recommended turn-on voltage.
Pin 2	Kelvin Source	Reference return for gate driver; must be routed separately from power source to avoid common-source inductance and ensure stable switching.
Pins 3–8	Power Source	Parallel low-inductance source terminals; carry full load current and connect to system ground/power return plane.

Key Features

Feature	Design Value
Kelvin source configuration	Enables precise gate control by eliminating source inductance impact on switching waveforms, reducing overshoot and improving EMI performance.
Commutation-robust body diode	Q_rr = 166 nC and t_fr = 24.7 ns support zero-voltage switching in hard-commutated totem-pole PFC without external diode.
JEDEC-qualified industrial reliability	Validated per JESD47 and JEP180 for 10+ year lifetime at T_j ≤ 150 °C, suitable for unattended telecom and energy storage deployments.
Low C_iss/C_rss ratio	C_iss = 2288 pF, C_rss = 24 pF → Miller ratio < 1.1% - Minimizes dv/dt-induced false turn-on and improves noise immunity in high-dV/dt environments.

Applications

Telecom & Server SMPS

EV Charging Infrastructure

Use Scenario: 3.3 kW–6.6 kW isolated DC/DC stage in 48 V or 54 V output server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side SiC MOSFET in phase-shifted full-bridge topology, handling 400 V DC bus and delivering >97% efficiency.

Use Value: 22 mΩ R_DS(on) and 158 nC Q_oss reduce total power loss by 18% vs. comparable Si MOSFETs, enabling fanless operation in dense rack-mounted units.

Use Scenario: Bidirectional AC/DC and DC/DC converter in 11 kW–22 kW wallbox and depot chargers.

IC Role / Device Role / Timing Role: High-frequency switching element in totem-pole PFC and CLLLC resonant DC/DC, managing 650 V bus and 100+ A output currents.

Use Value: Kelvin source and 175 °C T_j,max allow sustained 98.5% peak efficiency at 40 kHz switching, reducing thermal management volume by 35%.

Solar PV Inverters

Energy Storage Systems

Use Scenario: Three-phase string inverter DC link switching stage converting 800–1000 V DC to 230 V AC at 16–20 kHz.

IC Role / Device Role / Timing Role: Half-bridge leg switch in NPC or T-type topology, performing hard-switched PWM with active clamping.

Use Value: 350 mJ single-pulse avalanche energy and 200 V/ns dv/dt ruggedness ensure reliable operation during grid fault transients and lightning surges.

Use Scenario: Bi-directional DC/DC converter in 400 V–800 V battery formation and grid-support BESS with 500 kW+ modular stacks.

IC Role / Device Role / Timing Role: Isolation barrier switch in dual-active-bridge (DAB) topology, handling bidirectional 1000 A peak currents with soft-switching.

Use Value: Low Q_G (67 nC) and fast t_d(off) (24.7 ns) enable precise phase control and <100 ns dead-time optimization, minimizing circulating current loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021120K	R_DS(on) = 21 mΩ, Q_G = 62 nC, no Kelvin source, TO-247-4L package	Lacks Kelvin source; requires careful gate loop layout to mitigate ringing; higher thermal resistance (R_th(j–c) = 0.55 °C/W)	Select when board space allows TO-247 mounting and gate driver layout can control parasitic inductance.
ROHM SCT3022AL	R_DS(on) = 22 mΩ, Q_G = 72 nC, Kelvin source, TO-263-7L package	Higher Q_G increases driver loss; slightly slower t_r/t_f; same TOLL-equivalent footprint but different pinout	Select when sourcing flexibility is prioritized and gate driver can handle +20% Q_G without thermal penalty.

Compared with C3M0021120K and SCT3022AL, IMT65R022M1HXUMA1 uniquely combines Kelvin source, lowest R_th(j–c) (0.40 °C/W), and JEDEC industrial qualification-making it optimal for space-constrained, high-reliability 3–22 kW systems where thermal density and long-term stability are critical.

Availability

IMT65R022M1HXUMA1 is available at Aetrix Electronics and suitable for telecom SMPS, EV charging infrastructure, and solar PV inverters requiring stable component supply, long-lifecycle assurance, and traceable manufacturing origin.

Supply support for IMT65R022M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technology development since the early 2000s.

This part belongs to the CoolSiC™ M1 generation of trench-based 650 V SiC MOSFETs, designed specifically for high-frequency, high-efficiency industrial power conversion where thermal density, reliability, and ease of gate-drive integration are paramount.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The maximum continuous gate-source voltage is 20 V, as specified in Table 4 (Operating Range). Exceeding this value-even briefly-may accelerate gate oxide degradation and reduce lifetime. Infineon recommends limiting V_GS to 18 V for turn-on and 0 V for turn-off to ensure robust operation over 10+ years at T_j = 150 °C.

Can Pin 2 (Kelvin Source) be connected to the same PCB copper as Pins 3–8 (Power Source)?

No. Pin 2 must be routed on a dedicated low-current trace directly to the gate driver's source reference node. Connecting it to the power source plane introduces common-source inductance that distorts gate voltage waveforms, causes oscillation, and increases switching losses. The datasheet explicitly warns that exchanging or paralleling these pins may cause malfunction.

Is IMT65R022M1HXUMA1 suitable for hard-switched totem-pole PFC?

Yes. Its commutation-robust body diode (Q_rr = 166 nC, t_fr = 24.7 ns) and 200 V/ns dv/dt rating enable reliable operation in hard-commutated totem-pole PFC without external anti-parallel diodes. The Kelvin source further stabilizes switching behavior under high di/dt conditions typical in 11–22 kW designs.

What is the thermal resistance from junction to case, and how should it be used in heatsink design?

R_th(j–c) is 0.40 °C/W (Table 3), measured across the drain tab interface. This value assumes full-surface soldering of the exposed drain tab to a flat, nickel-plated copper heatsink with 1.5 W/m·K thermal interface material. It must be combined with heatsink thermal resistance (R_th(c–a)) and ambient temperature to calculate actual T_j; for 79 A continuous operation, T_j remains ≤155 °C with R_th(c–a) ≤ 0.35 °C/W.

IMT65R022M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IMT65R022M1HXUMA1 FAQ

1.How can I place an order for IMT65R022M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R022M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R022M1HXUMA1 reliable?

The price and inventory of IMT65R022M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R022M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R022M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R022M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R022M1HXUMA1?

IMT65R022M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R022M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R022M1HXUMA1?

For technical support, including IMT65R022M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R022M1HXUMA1 requirements.

6.How does Aetrix verify that IMT65R022M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R022M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R022M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R022M1HXUMA1?

All IMT65R022M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R022M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R022M1HXUMA1 part is unused and in its original packaging.

Return procedure for IMT65R022M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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