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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGOT65R025D2AUMA1

Name: IGOT65R025D2AUMA1
Brand: Infineon Technologies
SKU: IGOT65R025D2AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGOT65R025D2AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-BFSOP (0.295", 7.50mm Width)

Datasheet:: IGOT65R025D2AUMA1.pdf

Description:: IGOT65R025D2AUMA1

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Product details

Overview

IGOT65R025D2AUMA1 from Infineon is a 650 V, 25 mΩ enhancement-mode GaN HEMT in PG-DSO-20 package with Kelvin source and internal gate diode. It delivers 120 A pulsed drain current, ultra-low Q_g (11 nC), and zero reverse-recovery charge (Q_rr = 0 nC), enabling high-frequency totem-pole PFC and LLC resonant converters in datacenter SMPS.

For engineers reviewing the IGOT65R025D2AUMA1 datasheet, IGOT65R025D2AUMA1 pinout, IGOT65R025D2AUMA1 application, or IGOT65R025D2AUMA1 equivalent, key selection criteria include its 650 V V_DS,max, 0.025 Ω R_DS(on) at 25°C, 82 nC Q_oss, 200 V/ns dv/dt rating, and Kelvin-source layout for precise gate control in hard-switching topologies.

Technical Context

This CoolGaN™ G5 transistor uses lateral GaN-on-Si technology with integrated Kelvin source (Pin 8) to separate power and signal return paths, eliminating source inductance-induced gate oscillation during fast switching. Its normally-off operation relies on a recessed gate structure with 1.2 V typical V_GS(th) and −8 V gate-source reverse clamping.

The device exhibits no minority-carrier storage, resulting in zero Q_rr and symmetric forward/reverse conduction capability. Its dynamic parameters-C_iss = 780 pF, C_oss = 204 pF (time-related), and C_rss = 1.8 pF-are optimized for soft-switching efficiency in 100–500 kHz LLC and totem-pole PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - supports 400 V AC input rectified to 560 V DC bus with 15% margin for surge handling
R_DS(on),max	30 mΩ - ensures <1.8 W conduction loss at 62 A continuous current (T_j = 125°C)
Q_g,typ	11 nC - enables low gate drive power and <12 ns turn-on delay with 2.2 Ω driver
Q_oss	82 nC - defines energy loss during turn-off; critical for optimizing snubber design in hard-switched bridges
T_j,max	150 °C - allows operation in compact heatsink designs with junction-to-case R_thJC = 0.68 °C/W
dv/dt rating	200 V/ns - sustains robust commutation in high-di/dt half-bridge configurations without false triggering
I_D,pulse	120 A - supports peak load handling in 3–5 kW server PSU primary switches

Pinout & Package

PG-DSO-20 package with exposed thermal pad (heatslug) and integrated Kelvin source terminal. Pin 8 is dedicated Kelvin source for gate loop decoupling; Pins 11–12 and 19–20 are NC.

Pin/Terminal	Circuit Role	Design Meaning
1–7	Power Source	Main source connection for high-current return path; bonded to heatslug for low-inductance thermal/electrical path
8	Kelvin Source	Isolated sense node for gate driver feedback-eliminates source inductance impact on V_GS control
9,10	Gate	Dual gate inputs for parallel drive; reduces effective gate resistance and improves switching symmetry
13–18	Drain	Parallel drain terminals for low-inductance high-side connection in half-bridge layouts
Heatslug	Thermal & Electrical Ground	Exposed copper pad soldered to PCB ground plane-provides primary thermal path (R_thJC = 0.68 °C/W)

Key Features

Feature	Design Value
Zero reverse-recovery charge (Q_rr = 0 nC)	Enables bidirectional conduction without body-diode losses-critical for synchronous rectification and totem-pole PFC efficiency
Enhancement-mode GaN HEMT	Guarantees fail-safe OFF-state operation at V_GS = 0 V-no external bias circuitry required for startup safety
Integrated Kelvin source (Pin 8)	Decouples gate drive loop from power loop-prevents voltage overshoot during dV/dt transients up to 200 V/ns
2 kV HBM ESD rating	Supports robust handling in automated SMT lines without special ESD precautions beyond standard Class 1B protocols
650 V rated with 900 V transient capability	Withstands 1 million 900 V/1 μs pulses-meets IEC 61000-4-5 surge immunity requirements for industrial SMPS

Applications

Server PSU Totem-Pole PFC

Datacenter LLC Resonant Converter

Use Scenario: 3.5 kW front-end PFC stage operating at 120 kHz with SiC/GaN hybrid switching.

IC Role / Device Role / Timing Role: High-side GaN switch in interleaved totem-pole topology; handles full AC line current with zero dead-time conduction loss.

Use Value: Eliminates body-diode conduction loss and enables >99.2% efficiency at 230 V AC input due to Q_rr = 0 and low R_DS(on).

Use Scenario: Primary-side switch in 48 V output LLC resonant converter for AI accelerator racks.

IC Role / Device Role / Timing Role: Fast-switching primary FET synchronized to resonant tank zero-voltage switching transitions.

Use Value: Reduces turn-on loss by 40% vs. Si MOSFETs via 11 nC Q_g and 12 ns t_d(on), enabling 500 kHz operation with <0.5% voltage stress margin.

Industrial 48 V Telecom Rectifier

High-Density Laptop Adapter

Use Scenario: 2 kW telecom rectifier with active clamp forward topology feeding 48 V DC distribution bus.

IC Role / Device Role / Timing Role: Main switch controlling duty cycle and regulating output under dynamic load steps up to 100 A/μs.

Use Value: Maintains stable regulation with 200 V/ns dv/dt immunity-prevents false turn-on during high di/dt load transients.

Use Scenario: 140 W GaN-based adapter with dual-phase QR flyback + active clamp.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 250 kHz with adaptive frequency modulation.

Use Value: Achieves 30 W/in³ power density using 0.025 Ω R_DS(on) and 0.68 °C/W R_thJC-enables passive cooling below 65 W output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency GaN switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GAN063-650WSBDA	650 V, 30 mΩ, TO-247-4L package; higher R_thJC (0.95 °C/W); no Kelvin source	Limited to lower-power (<2 kW) hard-switched topologies due to gate loop inductance sensitivity	Select when board space permits larger through-hole mounting and thermal interface is less constrained
TPH3208PS	650 V, 32 mΩ SiC MOSFET in TO-247-4L; Q_g = 24 nC; Q_rr = 15 nC	Requires snubber design for Q_rr-related turn-off loss; lower dv/dt rating (100 V/ns)	Select when system-level reliability under repetitive surge stress is prioritized over peak efficiency

Compared with GAN063-650WSBDA and TPH3208PS, IGOT65R025D2AUMA1 offers superior high-frequency switching fidelity via Kelvin source and lowest Q_g, making it optimal for >300 kHz totem-pole and LLC designs where gate drive loss and commutation ruggedness dominate trade-offs.

Availability

IGOT65R025D2AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and high-density adapters requiring stable component supply and qualified GaN performance at production scale.

Supply support for IGOT65R025D2AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global wafer fabs and qualification labs.

This part belongs to the CoolGaN™ G5 product line-designed specifically for high-efficiency, high-power-density 650 V SMPS in datacenter, telecom, and industrial infrastructure.

FAQ

What gate drive voltage is required for reliable operation?

IGOT65R025D2AUMA1 requires V_GS = +6.8 V for full enhancement (R_DS(on) ≤ 30 mΩ) and −4 V for safe turn-off. The gate threshold is 0.9–1.6 V, and maximum continuous V_GS is ±10 V. Gate drive must reference the Kelvin source (Pin 8), not the power source (Pins 1–7), to maintain control stability.

Does this device require a negative gate voltage to prevent spurious turn-on?

No. The device's −8 V gate-source reverse clamping voltage and 1.2 V typical V_GS(th) allow robust operation with 0 V turn-off. However, applying −4 V improves noise immunity in high-dv/dt environments. Negative voltage is not mandatory but recommended for >150 V/ns applications per Infineon's Gate Drive Application Note.

How is thermal performance affected by the Kelvin source pin?

The Kelvin source (Pin 8) has no thermal function-it is electrically isolated from the power source (Pins 1–7) and heatslug. Thermal dissipation occurs exclusively through the heatslug and power source terminals. R_thJC = 0.68 °C/W is measured between junction and heatslug, independent of Kelvin source routing.

Can IGOT65R025D2AUMA1 replace silicon MOSFETs in existing designs without layout changes?

No. Direct replacement requires PCB redesign to accommodate the PG-DSO-20 footprint, separate Kelvin source routing, and updated gate driver layout to minimize loop inductance. The dual gate pins (9,10) and drain pins (13–18) also demand revised copper pour and via placement to maintain symmetry and thermal balance.

IGOT65R025D2AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-BFSOP (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 6.1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-91

IGOT65R025D2AUMA1 FAQ

1.How can I place an order for IGOT65R025D2AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGOT65R025D2AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGOT65R025D2AUMA1 reliable?

The price and inventory of IGOT65R025D2AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGOT65R025D2AUMA1 is usually 5 days.

3.What payment methods are accepted for IGOT65R025D2AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGOT65R025D2AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGOT65R025D2AUMA1?

IGOT65R025D2AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGOT65R025D2AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGOT65R025D2AUMA1?

For technical support, including IGOT65R025D2AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGOT65R025D2AUMA1 requirements.

6.How does Aetrix verify that IGOT65R025D2AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGOT65R025D2AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGOT65R025D2AUMA1 meets industry standards.

7.What is the process for return or replacement of IGOT65R025D2AUMA1?

All IGOT65R025D2AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGOT65R025D2AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGOT65R025D2AUMA1 part is unused and in its original packaging.

Return procedure for IGOT65R025D2AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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