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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
PJMH125N60FRC_T0_00601 600V 125mohm 30A SJ MOSFET Panjit International Inc.	8,313	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP051N15N5AKSA1 MOSFET N-CH 150V 120A TO220-3 Infineon Technologies	2,758	RFQ	Datasheet	OptiMOS™ 5	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	120A (Tc)	8V, 10V	5.1mOhm @ 60A, 10V	4.6V @ 264µA	100 nC @ 10 V	±20V	7800 pF @ 75 V	-	300mW (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
PJMB105N60FRC_R2_00201 600V 105mohm 35A SJ Panjit International Inc.	2,854	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN1R2-80CSEJ N-CHANNEL, 80 V, 1.18 MOHM, MOSF Nexperia USA Inc.	3,998	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	375A (Ta)	10V	1.18mOhm @ 25A, 10V	3.6V @ 1mA	350 nC @ 10 V	±20V	26187 pF @ 40 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
PSMN1R2-80ASEJ N-CHANNEL, 80 V, 1.18 MOHM, MOSF Nexperia USA Inc.	9,426	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	375A (Ta)	10V	1.18mOhm @ 25A, 10V	3.6V @ 1mA	350 nC @ 10 V	±20V	26187 pF @ 40 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
PSMN1R4-100CSFJ NEXTPOWER 100 V, 1.35 MOHM, N-CH Nexperia USA Inc.	9,136	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	400A (Ta)	7V, 10V	1.35mOhm @ 25A, 10V	4V @ 1mA	248 nC @ 10 V	±20V	17737 pF @ 50 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
PSMN1R3-100ASFJ NEXTPOWER 100 V, 1.3 MOHM, N-CHA Nexperia USA Inc.	7,401	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	400A (Ta)	7V, 10V	1.3mOhm @ 25A, 10V	4V @ 1mA	248 nC @ 10 V	±20V	17737 pF @ 50 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
SIHP125N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	7,601	RFQ	Datasheet	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27A (Tc)	10V	120mOhm @ 12A, 10V	5V @ 250µA	57 nC @ 10 V	±30V	1938 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHB125N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	5,802	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27A (Tc)	10V	120mOhm @ 12A, 10V	5V @ 250µA	57 nC @ 10 V	±30V	1938 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
MCW075N60FH-BP N-CHANNEL MOSFET,TO-247 Micro Commercial Co	4,206	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	75mOhm @ 20A, 10V	5V @ 2.8mA	81 nC @ 10 V	±30V	3202 pF @ 100 V	-	312.5W (Tj)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
MCW105N60FH-BP N-CHANNEL MOSFET,TO-247 Micro Commercial Co	9,625	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.6A (Tc)	10V	105mOhm @ 15.3A, 10V	5V @ 2.1mA	57 nC @ 10 V	±30V	2240 pF @ 100 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
TK110Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	20	RFQ	Datasheet	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
SIHH125N65E-T1-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	9,506	RFQ	Datasheet	E	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	25A (Tc)	10V	120mOhm @ 12A, 10V	5V @ 250µA	57 nC @ 10 V	±30V	1938 pF @ 100 V	-	174W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
PSMN1R1-80ASFJ NEXTPOWER 80 V, 1.11 MOHM, N-CHA Nexperia USA Inc.	8,658	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	385A (Tc)	7V, 10V	1.11mOhm @ 25A, 10V	4V @ 1mA	363 nC @ 10 V	±20V	24627 pF @ 40 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
PSMN1R1-80CSFJ NEXTPOWER 80 V, 1.16 MOHM, N-CHA Nexperia USA Inc.	4,772	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	400A (Ta)	7V, 10V	1.16mOhm @ 25A, 10V	4V @ 1mA	206 nC @ 10 V	±20V	15363 pF @ 40 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
SIHK125N65E-T1-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	3,888	RFQ	Datasheet	E	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	25A (Tc)	10V	120mOhm @ 12A, 10V	5V @ 250µA	57 nC @ 10 V	±30V	1938 pF @ 100 V	-	174W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK®10 x 12
IXTH450P2 MOSFET N-CH 500V 16A TO247 IXYS	3,121	RFQ	Datasheet	PolarP2™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	330mOhm @ 8A, 10V	4.5V @ 250µA	43 nC @ 10 V	±30V	2530 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
MXP120A250FL-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	9,944	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK065Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	25	RFQ	Datasheet	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	38A (Ta)	10V	65mOhm @ 19A, 10V	4V @ 1.69mA	62 nC @ 10 V	±30V	3650 pF @ 300 V	-	270W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
PJMH105N60FRC_T0_00601 600V 105mohm 35A SJ MOSFET Panjit International Inc.	6,356	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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