Toshiba Semiconductor and Storage TK065Z65Z,S1F

Overview

TK065Z65Z from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ power MOSFET designed for high-efficiency switching in primary-side SMPS stages. It delivers 650 V V_DSS, 38 A I_D (DC), R_DS(ON) = 0.054 Ω (typ.), and TO-247-4L(T) packaging with isolated source pin configuration - optimized for hard-switched PFC and LLC resonant converters.

For engineers reviewing the TK065Z65Z datasheet, TK065Z65Z pinout, TK065Z65Z application, or TK065Z65Z equivalent, key selection criteria include avalanche energy rating (E_AS = 569 mJ), gate charge (Q_g = 62 nC), dv/dt ruggedness (4.2 V/ns), thermal resistance (R_th(ch-c) = 0.462 °C/W), and dual-source pin layout for low-inductance gate return path.

Technical Context

This device implements Toshiba's Double-diffused MOS (DTMOS) structure to achieve lower R_DS(ON) without increasing gate charge - enabling higher efficiency at 100–300 kHz switching frequencies. Its 4-pin TO-247-4L(T) package separates gate drive return (Source 2) from main current path (Source 1), reducing common-source inductance and improving turn-off stability under high di/dt conditions.

The TK065Z65Z features enhancement-mode operation (V_th = 3–4 V), 650 V blocking capability, and robust unclamped inductive switching (UIS) performance (IAS = 9.5 A, EAS = 569 mJ). Its C_iss = 3650 pF and C_oss = 83 pF support fast, controlled transitions while maintaining EMI manageability in high-density power designs.

Key Specifications

Pinout & Package

Package: TO-247-4L(T), also designated 2-16M2A by Toshiba - thermally enhanced variant with isolated Source 2 terminal for gate loop decoupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, the TK065Z65Z offers superior 650 V rating for universal-line designs, lower R_th(ch-c) for thermal headroom, and built-in gate-loop isolation - making it optimal for high-reliability, high-frequency SMPS where layout flexibility and transient robustness are critical.

Availability

TK065Z65Z is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and solar microinverter DC-link stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK065Z65Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, thermal performance, and industrial-grade longevity.

The TK065Z65Z belongs to Toshiba's DTMOS™ Z-series high-voltage MOSFET family, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 100–500 kHz with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current rating for TK065Z65Z at Tc = 25 °C?

The TK065Z65Z has a maximum continuous drain current (I_D) of 38 A when case temperature (T_c) is maintained at 25 °C. This rating assumes proper heatsinking and adherence to the SOA curve in Figure 8.18. At elevated case temperatures, derating applies per the PD–Tc curve (Figure 8.15); for example, at T_c = 100 °C, the usable I_D drops to approximately 22 A.

Does TK065Z65Z require a negative gate voltage for reliable turn-off?

No, the TK065Z65Z does not require negative gate voltage for turn-off. Its enhancement-mode threshold (V_th = 3–4 V) and low gate leakage (±1 µA) allow clean turn-off with 0 V gate drive. However, applying −5 V to the gate during off-state improves noise immunity in high-dv/dt environments - a design choice, not a requirement for basic functionality of TK065Z65Z.

How is the Source 2 pin used in TK065Z65Z, and why is it separated from Source 1?

Source 2 in TK065Z65Z serves exclusively as the gate driver return path, physically isolated from Source 1 which carries main switched current. This separation minimizes shared impedance between gate and power loops, suppressing gate ringing and false turn-on. Per Toshiba's layout guidance, Source 2 must connect directly to the gate driver IC ground, while Source 1 connects to the main power ground plane - a key distinction in TK065Z65Z implementation.

What is the guaranteed single-pulse avalanche energy rating for TK065Z65Z?

The TK065Z65Z is rated for a guaranteed single-pulse avalanche energy (E_AS) of 569 mJ under test conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 11.2 mH, and I_AS = 9.5 A. This value is production-tested and specified in Absolute Maximum Ratings Table 4. It reflects real-world capability to absorb inductive energy during overcurrent or short-circuit events without parametric shift or failure.

Is TK065Z65Z compatible with standard TO-247 heatsinks?

Yes, TK065Z65Z uses the industry-standard TO-247-4L(T) mechanical outline (Toshiba package code 2-16M2A), fully compatible with standard TO-247 mounting hardware and heatsinks. The drain tab is electrically connected to the die and must be insulated from chassis ground using mica or polymer washers. Mounting torque must not exceed 0.8 N·m to avoid package cracking or bond wire damage - a critical specification for long-term reliability of TK065Z65Z.