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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP051N15N5AKSA1

Name: IPP051N15N5AKSA1
Brand: Infineon Technologies
SKU: IPP051N15N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP051N15N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP051N15N5AKSA1.pdf

Description:: MOSFET N-CH 150V 120A TO220-3

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Product details

Overview

IPP051N15N5AKSA1 from Infineon Technologies is a 150 V, 120 A N-channel enhancement-mode MOSFET in TO-220-3 package with 5.1 mΩ max R_DS(on) at V_GS = 10 V, 83 nC Q_rr, and 175 °C maximum junction temperature-designed for high-frequency synchronous rectification in server power supplies and telecom DC-DC converters.

For engineers reviewing the IPP051N15N5AKSA1 datasheet, IPP051N15N5AKSA1 pinout, IPP051N15N5AKSA1 application, or IPP051N15N5AKSA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), ultra-low reverse recovery charge for ZVS/ZCS operation, thermal robustness up to 175 °C, and JEDEC-qualified reliability for industrial and telecom power systems.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve simultaneous low conduction loss (5.1 mΩ) and fast switching (Q_g = 100 nC, Q_gd = 24 nC), enabling high-efficiency operation above 300 kHz in hard-switched and resonant topologies. Its 83 nC reverse recovery charge (Q_rr) and 60 ns typical t_rr minimize diode-related losses during commutation.

The MOSFET features a 150 V V_DS rating with 230 mJ single-pulse avalanche energy (E_AS), 0.3 K/W typical R_thJC, and gate threshold voltage of 3.8 V (typical) - supporting stable turn-on under wide V_GS margin while maintaining low dynamic losses in high-side and low-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands 150 V drain-source blocking voltage, suitable for 48 V input bus and 12 V output DC-DC stages with safety margin.
R_DS(on), max	5.1 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 120 A continuous current with proper heatsinking.
Q_rr	83 nC - Reduces switching loss and EMI in synchronous rectifiers by minimizing body diode reverse recovery tail current.
I_D, cont	120 A at T_C = 25 °C - Supports high-current output rails in server VRMs and base station power modules.
T_j, max	175 °C - Allows sustained operation in thermally constrained environments such as sealed telecom enclosures.
Q_g	100 nC - Enables efficient gate drive with standard 1–2 A peak drivers while maintaining <20 ns rise/fall times.
E_AS	230 mJ - Provides ruggedness against inductive load transients and short-circuit events without failure.

Pinout & Package

Delivered in PG-TO220-3 package with isolated metal tab (Drain-connected). Standard TO-220-3 mechanical outline supports screw-mount heatsinking and manual PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max V_GS; low input capacitance (C_iss = 7.8 nF) reduces driver loading.
Pin 2 (Drain) + Tab	High-side power terminal	Electrically connected to exposed metal tab; must be insulated from heatsink unless referenced to system ground or floating rail.
Pin 3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout critical for minimizing V_GS ringing.

Key Features

Feature	Design Value
Ultra-low FOM (Q_g × R_DS(on))	510 nC·mΩ - Enables higher frequency operation without sacrificing efficiency in LLC and phase-shifted full-bridge converters.
Low Q_rr and t_rr	83 nC Q_rr, 60 ns t_rr - Reduces cross-conduction loss and improves light-load efficiency in synchronous rectification.
175 °C rated junction temperature	Extended thermal headroom - Permits derating-free operation in ambient temperatures up to 85 °C with standard heatsink design.
Pb-free, RoHS-compliant plating	Meets J-STD-20 reflow profile - Compatible with lead-free SMT rework and automated assembly processes.
JEDEC-qualified reliability	Qualified per JESD22-A108 (HTOL), JESD22-A101 (HAST), JESD22-A110 (TCT) - Validated for 10+ year field life in telecom infrastructure.

Applications

Server VRM Output Stage

Telecom 48 V Input DC-DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V/200 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 5.1 mΩ R_DS(on) and 83 nC Q_rr reduce total power loss by ≥12% vs. prior-gen OptiMOS™4 devices at full load.

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V telecom input to 12 V intermediate bus in base station power units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with fast body diode recovery to support 300–600 kHz switching.

Use Value: 175 °C T_j,max and 230 mJ E_AS ensure reliable operation under transient overload and thermal cycling stress.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter stage driving 5–10 kW permanent magnet motors in factory automation drives.

IC Role / Device Role / Timing Role: High-side switch in 650 V-class half-bridge modules, leveraging low Q_gd/Q_g ratio for clean turn-off.

Use Value: 24 nC Q_gd minimizes Miller-induced shoot-through risk, improving fault tolerance in high-dV/dt motor control environments.

Use Scenario: Boost PFC stage in 6.6 kW bi-directional OBC handling AC grid input and battery charging.

IC Role / Device Role / Timing Role: Fast-recovery boost switch operating in continuous conduction mode (CCM) with 100 kHz–200 kHz switching.

Use Value: 100 nC Q_g enables efficient gate drive using integrated SiC gate drivers, reducing external component count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(on) = 5.3 mΩ (max), Q_rr = 110 nC, T_j,max = 175 °C, TO-220FP package (lower power dissipation capability)	Higher Q_rr increases switching loss in ZVS designs; lower P_tot rating limits use in high-duty-cycle applications.	Acceptable where cost sensitivity outweighs 15–20% efficiency penalty at >200 kHz; verify thermal margin with R_thJA = 62 K/W.
IXTH120N15L2	R_DS(on) = 4.8 mΩ (max), Q_rr = 135 nC, T_j,max = 175 °C, TO-247 package (higher thermal performance but larger footprint)	Higher Q_rr degrades light-load efficiency; TO-247 requires more PCB area and different mounting hardware.	Preferred when thermal budget is tight and board space allows; avoid in compact telecom modules due to footprint and layout complexity.

Compared with STP110N15F7 and IXTH120N15L2, IPP051N15N5AKSA1 delivers the lowest Q_rr-to-R_DS(on) ratio (16.3 nC/mΩ), making it optimal for high-frequency synchronous rectification where diode recovery dominates loss mechanisms - especially in space-constrained, thermally aggressive telecom and server applications.

Availability

IPP051N15N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPP051N15N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™5 family - engineered specifically for high-efficiency, high-power-density power conversion in data center, telecom, and industrial applications where low R_DS(on), fast switching, and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for IPP051N15N5AKSA1 at 100 °C case temperature?

The maximum continuous drain current is 115 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This reflects thermal derating from the 120 A rating at 25 °C case temperature, based on R_thJC = 0.3 K/W and safe operating area constraints.

Is IPP051N15N5AKSA1 suitable for use in synchronous rectification with 12 V output and 500 kHz switching?

Yes - its 83 nC Q_rr, 5.1 mΩ R_DS(on), and 100 nC Q_g enable efficient synchronous rectification at 500 kHz. Measured t_rr of 60–120 ns and low C_oss (1.95 nF) minimize dead-time losses and EMI generation in high-frequency buck-derived topologies.

Does the TO-220-3 package have an electrically isolated tab?

No - the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is required unless the heatsink is referenced to the drain potential or system ground is designed accordingly.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 3.0 V to 4.6 V (min/typ/max) at T_j = 25 °C. This ensures reliable turn-on with 5 V logic-level drivers while avoiding unintended conduction from noise; a 10 V gate drive is recommended to fully enhance the channel and minimize R_DS(on) variation across temperature.

IPP051N15N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 264µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP051N15N5AKSA1 FAQ

1.How can I place an order for IPP051N15N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP051N15N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP051N15N5AKSA1 reliable?

The price and inventory of IPP051N15N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP051N15N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP051N15N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP051N15N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP051N15N5AKSA1?

IPP051N15N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP051N15N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP051N15N5AKSA1?

For technical support, including IPP051N15N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP051N15N5AKSA1 requirements.

6.How does Aetrix verify that IPP051N15N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP051N15N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP051N15N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP051N15N5AKSA1?

All IPP051N15N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP051N15N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP051N15N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP051N15N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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