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Vishay Siliconix SIHK125N65E-T1-GE3
- Part No.:
- SIHK125N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerBSFN
- Datasheet:
-
SIHK125N65E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET 650 V (D-
- Quantity:
- Payment:
- Shipping:
Inventory:3,888
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Product details
Overview
SIHK125N65E-T1-GE3 from Vishay Siliconix is a 650 V, 25 A N-channel Power MOSFET in PowerPAK® 10 x 12 package with RDS(on) = 0.106 Ω (typ. at VGS = 10 V), Qg = 38 nC (typ.), and Kelvin-source configuration for reduced gate noise-designed for high-efficiency server SMPS and PFC stages.
For engineers reviewing the SIHK125N65E-T1-GE3 datasheet, SIHK125N65E-T1-GE3 pinout, SIHK125N65E-T1-GE3 application, or SIHK125N65E-T1-GE3 equivalent, key selection criteria include its 81 mJ single-pulse avalanche rating, 0.72 °C/W junction-to-case thermal resistance, low Co(er) of 81 pF, and compatibility with high dv/dt (100 V/ns) switching environments.
Technical Context
This E-series MOSFET employs 4th-generation silicon technology optimized for hard-switched topologies, featuring low figure-of-merit (RDS(on) × Qg) and reduced effective output capacitance (Co(er) = 81 pF) to minimize switching losses in continuous conduction mode (CCM) PFC and LLC resonant converters.
Its Kelvin-source connection isolates the power source path from the driver return path, suppressing gate loop inductance-induced oscillation during fast dV/dt transitions-critical for stable operation at 520 V bus voltages and 100 A/μs di/dt conditions in telecom rectifiers and solar inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input PFC stages with 20% margin and withstands transient overvoltage up to 520 V DC bus |
| RDS(on) typ | 0.106 Ω at VGS = 10 V - enables <1.3 W conduction loss at 12 A, reducing heatsink requirements in 3 kW server PSUs |
| Qg max | 57 nC - determines gate drive power requirement (~1.14 mW at 200 kHz, VGS swing = 10 V) |
| EAS | 81 mJ - ensures robustness against unclamped inductive switching events in motor drive half-bridges |
| RthJC | 0.72 °C/W - allows 174 W dissipation with ≤125 °C case temperature rise, supporting compact thermal design |
| Co(er) | 81 pF - lowers energy loss per switching cycle (E = ½·Co(er)·V²), critical for >100 kHz PFC operation |
| dv/dt rating | 100 V/ns - sustains reliable operation in high-speed ZVS/ZCS circuits without spurious turn-on |
Pinout & Package
PowerPAK® 10 x 12 (TOLL) thermally enhanced surface-mount package with exposed drain tab on bottom side; 8-pin layout with Kelvin-source configuration separating high-current source (pins 3–8) from driver-source reference (pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires low-inductance gate driver trace due to 0.8 Ω typical gate input resistance |
| Pin 2 | Driver Source | Kelvin connection for gate driver return-decouples gate loop from high di/dt source current path |
| Pins 3–8 | Power Source | Parallel source terminals carrying full load current; must be routed with minimum impedance to reduce conduction loss |
| Drain Tab | Drain | Exposed copper pad on underside; primary thermal path to PCB copper pour or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| 4th-gen E-series silicon | Delivers 22% lower RDS(on) × Qg vs. prior generation, enabling higher power density in 1U server PSUs |
| Kelvin-source configuration | Reduces gate oscillation risk by isolating driver return from high-di/dt source current-verified at 100 A/μs di/dt |
| Avalanche-rated (UIS) | Withstands 81 mJ single-pulse energy without failure-eliminates need for external snubbers in flyback/PFC clamp circuits |
| Low Co(er) | 81 pF effective output capacitance reduces turn-off loss by ~35% vs. standard 650 V MOSFETs at 400 V VDS |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (Doc. #99912) |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW CCM boost PFC stage operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 25 A RMS input current with minimal conduction and switching loss. Use Value: 0.106 Ω RDS(on) and 81 pF Co(er) enable >98.2% PFC efficiency while maintaining <95 °C junction temperature under full load. |
Use Scenario: Output synchronous rectification in 48 V telecom rectifier with 200 kHz LLC resonant converter. IC Role / Device Role / Timing Role: Low-Qg (38 nC typ.) MOSFET driven by phase-shifted gate signals to replace Schottky diodes. Use Value: Kelvin-source layout prevents false triggering during 100 V/ns dv/dt transients across transformer secondary winding. |
| Solar PV Inverter | Industrial Motor Drive |
Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage with 600 V DC input. IC Role / Device Role / Timing Role: Hard-switched 650 V switch rated for repetitive 520 V blocking and 25 A peak current. Use Value: 81 mJ EAS rating ensures reliability during grid fault-induced voltage spikes without derating. |
Use Scenario: IGBT replacement in 7.5 kW VFD inverter leg for HVAC compressor drive. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in totem-pole configuration with SiC diode freewheeling. Use Value: 0.72 °C/W RthJC enables direct mounting to aluminum heatsink, eliminating thermal interface material in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N65M5 | 650 V, 65 A, RDS(on) = 0.085 Ω, TO-247 package, no Kelvin source | Higher current rating but larger footprint and no gate noise suppression-requires external gate ferrite bead | Preferred for industrial motor drives needing >40 A peak current where board space permits TO-247 |
| IXFH60N65X2 | 650 V, 60 A, RDS(on) = 0.075 Ω, TO-247, ultra-low Qgd/Qg ratio | Superior dv/dt immunity (120 V/ns) but lacks avalanche rating and Kelvin-source isolation | Selected for high-frequency ZVS resonant converters where avalanche robustness is managed externally |
Compared with STW65N65M5 and IXFH60N65X2, SIHK125N65E-T1-GE3 offers unique Kelvin-source noise immunity and certified 81 mJ UIS capability in a compact PowerPAK® 10 x 12 footprint-making it optimal for space-constrained, high-reliability PFC and telecom rectifier designs where gate oscillation and unclamped inductive stress are primary concerns.
Availability
SIHK125N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIHK125N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.
The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion-specifically engineered for PFC, server/telecom PSUs, and industrial inverters demanding low RDS(on) × Qg, avalanche ruggedness, and thermal efficiency.
FAQ
What is the maximum continuous drain current rating for SIHK125N65E-T1-GE3 at 100 °C case temperature?
The SIHK125N65E-T1-GE3 has a continuous drain current rating of 16 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 10 x 12 package and ensures safe operation within its 174 W maximum power dissipation envelope when mounted on appropriate PCB copper area.
Does SIHK125N65E-T1-GE3 support logic-level gate drive?
No, SIHK125N65E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for RDS(on) at VGS = 10 V. Reliable enhancement requires ≥10 V gate drive; operation below 8 V risks incomplete turn-on and excessive conduction loss. The SIHK125N65E-T1-GE3 datasheet does not specify performance at 5 V gate drive.
What is the significance of the Kelvin-source configuration in SIHK125N65E-T1-GE3?
The Kelvin-source configuration in SIHK125N65E-T1-GE3 separates the driver return path (pin 2) from the high-current power source path (pins 3–8). This eliminates shared source inductance between gate loop and power loop, preventing gate voltage ringing and false turn-on during high di/dt switching-critical for stable operation in 520 V bus applications like telecom rectifiers where dv/dt exceeds 100 V/ns.
Can SIHK125N65E-T1-GE3 be used in avalanche mode repeatedly?
The SIHK125N65E-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 81 mJ, tested per JEDEC JESD24-1. It is not characterized for repetitive avalanche operation. Repeated UIS events may degrade reliability; circuit design should avoid recurring inductive switching stress. For repetitive clamping, external protection (e.g., TVS, RCD snubber) is recommended alongside SIHK125N65E-T1-GE3 use.
What is the thermal resistance from junction to ambient (RthJA) for SIHK125N65E-T1-GE3?
The datasheet specifies a maximum RthJA of 42 °C/W for SIHK125N65E-T1-GE3 when mounted on a 1″ × 1″ FR4 board-a conservative value for minimal copper. With proper PCB layout (≥250 mm² 2-oz copper pour under drain tab), actual RthJA improves significantly. For system thermal design, RthJC = 0.72 °C/W is the more relevant parameter, as it defines heat transfer from junction to heatsink or copper plane.
SIHK125N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerBSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1938 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK®10 x 12
SIHK125N65E-T1-GE3 FAQ
1.How can I place an order for SIHK125N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHK125N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHK125N65E-T1-GE3 reliable?
The price and inventory of SIHK125N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK125N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHK125N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK125N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHK125N65E-T1-GE3?
SIHK125N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHK125N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHK125N65E-T1-GE3?
For technical support, including SIHK125N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK125N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHK125N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHK125N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK125N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHK125N65E-T1-GE3?
All SIHK125N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK125N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHK125N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHK125N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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