Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP125N65E-GE3

Name: SIHP125N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP125N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP125N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP125N65E-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,601

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP125N65E-GE3 from Vishay Siliconix is a 650 V, 27 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.106 Ω R_DS(on) at V_GS = 10 V, 57 nC total gate charge, and Kelvin-source connection for reduced gate noise-designed for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHP125N65E-GE3 datasheet, SIHP125N65E-GE3 pinout, SIHP125N65E-GE3 application, or SIHP125N65E-GE3 equivalent, key selection criteria include its 81 mJ single-pulse avalanche energy rating, 0.6 °C/W junction-to-case thermal resistance, low Co(er) of 81 pF, and E-series 4th-generation FOM optimization for hard-switched SMPS topologies.

Technical Context

This device implements a planar high-voltage trench-gated structure with Kelvin-source configuration to decouple power and signal source paths, minimizing gate loop inductance and improving switching stability under high di/dt conditions. Its 650 V V_DS rating and 150 °C maximum junction temperature support operation in continuous conduction mode (CCM) PFC and LLC resonant converters.

The MOSFET delivers low effective output capacitance (Co(er) = 81 pF) and optimized Q_g/Q_gd ratio (57 nC / 14 nC), enabling fast turn-on/turn-off with reduced switching losses at 520 V bus voltage. Dynamic parameters are characterized per JEDEC JESD-24-10 with defined test circuits for td(on), tr, td(off), and tf.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified systems with 20% margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ @ 25 °C	0.106 Ω - enables <2.7 W conduction loss at 12 A DC, critical for high-current PFC boost stages
Q_g max	57 nC - determines gate driver power requirement and influences switching speed in 100–300 kHz SMPS designs
E_AS	81 mJ - rated unclamped inductive switching energy ensures robustness during startup/fault events without external snubbers
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case-to-ambient delta, supporting forced-air-cooled 1–3 kW modules
Co(er)	81 pF - energy-related output capacitance directly impacts turn-off loss and ZVS transition capability in resonant topologies
V_GS(th)	3.0–5.0 V - ensures reliable turn-on with standard 12 V gate drivers while avoiding false triggering from noise

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and RoHS-compliant lead-free/halogen-free finish. Thermal pad on drain tab enables direct heatsink attachment with low thermal resistance path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal for MOSFET channel; Kelvin-source configuration separates this from power source path to suppress gate oscillation
D	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current return path to heatsink
S	Source	Power return node; includes dedicated Kelvin-source bond wire to isolate gate drive reference from high di/dt current loops

Key Features

Feature	Design Value
4th generation E-series technology	Optimized cell pitch and trench depth reduce R_DS(on) × Q_g FOM by >25% vs. prior gen, lowering combined conduction/switching loss
Kelvin-source connection	Separates gate drive return from power source path, eliminating common-source inductance effects that cause ringing and shoot-through risk
Avalanche-rated (UIS)	Guaranteed 81 mJ single-pulse energy handling enables robust operation during inductive load switching without derating
Low Co(er)	81 pF effective output capacitance minimizes turn-off loss and improves soft-switching behavior in LLC and phase-shifted full-bridge converters
High dv/dt immunity	Rated 100 V/ns drain-source voltage slope ensures stable operation under fast transients in high-frequency hard-switched topologies

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: High-density 1U/2U AC-DC front-end with active PFC and LLC resonant DC-DC stage operating at 100–200 kHz. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC boost converter and primary-side switch in LLC half-bridge. Use Value: Low R_DS(on) and Co(er) reduce conduction loss and turn-off energy, enabling >96% efficiency at 1.5 kW with 65 °C ambient.	Use Scenario: -48 V telecom rectifier module with dual-phase interleaved PFC and forward-derived isolation stage. IC Role / Device Role / Timing Role: High-side switch in interleaved PFC legs and synchronous rectifier driver interface in secondary-side control. Use Value: Kelvin-source layout and 100 V/ns dv/dt rating prevent false triggering during multi-phase current commutation and bus transients.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: Three-phase string inverter with two-level or three-level NPC topology, 600–1000 V DC link, 16–20 kHz switching. IC Role / Device Role / Timing Role: Upper-leg IGBT/MOSFET replacement in DC-link chopper and MPPT boost stage. Use Value: 650 V rating and 150 °C T_J allow operation at elevated ambient temperatures in outdoor enclosures without derating.	Use Scenario: 3–7.5 kW variable frequency drive with sensorless vector control, operating at 4–8 kHz PWM frequency. IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge driving induction motor windings with regenerative braking. Use Value: Avalanche energy rating and body diode t_rr of 345 ns enable reliable freewheeling during short-circuit and regeneration events without external diodes.

Server Power Supply

Telecom Rectifier

Use Scenario: High-density 1U/2U AC-DC front-end with active PFC and LLC resonant DC-DC stage operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC boost converter and primary-side switch in LLC half-bridge.

Use Value: Low R_DS(on) and Co(er) reduce conduction loss and turn-off energy, enabling >96% efficiency at 1.5 kW with 65 °C ambient.

Use Scenario: -48 V telecom rectifier module with dual-phase interleaved PFC and forward-derived isolation stage.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC legs and synchronous rectifier driver interface in secondary-side control.

Use Value: Kelvin-source layout and 100 V/ns dv/dt rating prevent false triggering during multi-phase current commutation and bus transients.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: Three-phase string inverter with two-level or three-level NPC topology, 600–1000 V DC link, 16–20 kHz switching.

IC Role / Device Role / Timing Role: Upper-leg IGBT/MOSFET replacement in DC-link chopper and MPPT boost stage.

Use Value: 650 V rating and 150 °C T_J allow operation at elevated ambient temperatures in outdoor enclosures without derating.

Use Scenario: 3–7.5 kW variable frequency drive with sensorless vector control, operating at 4–8 kHz PWM frequency.

IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge driving induction motor windings with regenerative braking.

Use Value: Avalanche energy rating and body diode t_rr of 345 ns enable reliable freewheeling during short-circuit and regeneration events without external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	600 V, 65 A, R_DS(on) = 0.055 Ω, D²PAK package, no Kelvin source	Higher current rating but larger footprint; lacks Kelvin-source noise immunity for high-di/dt gate drive	Preferred for space-constrained, lower-loss 600 V designs where gate noise is mitigated externally
IXFH32N65X2	650 V, 32 A, R_DS(on) = 0.115 Ω, TO-247 package, standard 3-pin source	Higher R_DS(on), no Kelvin source, larger thermal resistance (R_thJC = 0.45 °C/W), higher Q_g (72 nC)	Offers higher peak current headroom but requires stronger gate driver and careful layout to avoid oscillation

Compared with STW65N60DM6 and IXFH32N65X2, SIHP125N65E-GE3 provides superior gate noise immunity via Kelvin-source architecture and lower Co(er), making it optimal for high-frequency, high-di/dt PFC and resonant converters where layout parasitics dominate reliability.

Availability

SIHP125N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for SIHP125N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertically integrated manufacturing and rigorous reliability testing.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion in server, telecom, and renewable energy systems, emphasizing low FOM, avalanche ruggedness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHP125N65E-GE3 at 100 °C case temperature?

The SIHP125N65E-GE3 has a continuous drain current rating of 17 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 27 A rating at 25 °C, using the linear derating factor of 1.67 W/°C. Designers must verify heatsink performance to maintain case temperature within limits during sustained operation.

Does SIHP125N65E-GE3 support Kelvin-source connection, and how does it impact gate drive layout?

Yes, SIHP125N65E-GE3 incorporates a dedicated Kelvin-source terminal separate from the main power source, explicitly noted in the features and pinout. This configuration isolates the gate drive return path from high di/dt current flow, reducing gate loop inductance and suppressing oscillation-requiring separate PCB traces for the Kelvin-source bond wire connection to the gate driver ground.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP125N65E-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHP125N65E-GE3 is 345 ns, measured at T_J = 25 °C, I_F = I_S = 12 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter is critical for evaluating freewheeling behavior in hard-switched topologies and informs snubber design and dead-time selection.

Can SIHP125N65E-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHP125N65E-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 81 mJ, tested per JEDEC JESD24-10 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.4 A. This rating supports robustness during startup, overload, and fault conditions without requiring external protection circuitry.

What is the gate-source threshold voltage range for SIHP125N65E-GE3, and why is it important for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHP125N65E-GE3 ranges from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 12 V gate drivers while providing sufficient margin against false turn-on from noise or coupling-critical for stable operation in high-noise power converter environments.

SIHP125N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1938 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP125N65E-GE3 FAQ

1.How can I place an order for SIHP125N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP125N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP125N65E-GE3 reliable?

The price and inventory of SIHP125N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP125N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP125N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP125N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP125N65E-GE3?

SIHP125N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP125N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP125N65E-GE3?

For technical support, including SIHP125N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP125N65E-GE3 requirements.

6.How does Aetrix verify that SIHP125N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP125N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP125N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP125N65E-GE3?

All SIHP125N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP125N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP125N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP125N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …