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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
DMWSH120H90SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	7,205	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	40A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	51.1 nC @ 15 V	+19V, -8V	1112 pF @ 1000 V	-	235W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
DMWSH120H90SM3 SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	2,904	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	41A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	50.9 nC @ 15 V	+19V, -8V	1090 pF @ 1000 V	-	246W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
SCT070H120G3-7 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	6,906	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	7,818	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1951 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
IMLT65R033M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	8,373	RFQ	-	CoolSiC™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	68A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1213 pF @ 400 V	-	312W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6
G3F45MT06L-TR 650V 40M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	8,412	RFQ	-	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	61A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IPT60R016CM8XTMA1 IPT60R016CM8XTMA1 Infineon Technologies	6,939	RFQ	-	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	142A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
STW70N65DM6-4 MOSFET N-CH 650V 68A TO247-4 STMicroelectronics	7,461	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4.75V @ 250µA	125 nC @ 10 V	±25V	4900 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW065SIC049 SIC MOSFET, TO-247-3L, N, 60A, 6 Diotec Semiconductor	6,490	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	60A (Tc)	18V	49mOhm @ 30A, 18V	4V @ 10mA	128 nC @ 20 V	+18V, -5V	2612 pF @ 600 V	-	550W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
MSC035SMA070B4N MOSFET SIC 700 V 35 MOHM TO-247- Microchip Technology	8,067	RFQ	-	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	700 V	75A (Tc)	18V, 20V	44mOhm @ 30A, 20V	5V @ 2mA	93 nC @ 20 V	+23V, -10V	1806 pF @ 700 V	-	304W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT040W65G3-4 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	2,863	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STWA65N045M9 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	4,116	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
SCT070W120G3-4 AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	9,992	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies	3,613	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	38A (Tc)	-	-	1.6V @ 3.3mA	6 nC @ 3 V	-10V	430 pF @ 400 V	-	124W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
IMZC120R034M2HXKSA1 IMZC120R034M2HXKSA1 Infineon Technologies	2,087	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	55A (Tc)	15V, 18V	34mOhm @ 20A, 18V	5.1V @ 6.4mA	45 nC @ 18 V	+23V, -7V	1510 pF @ 800 V	-	244W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies	5,599	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	-	-	1.6V @ 3.3mA	6 nC @ 3 V	-10V	430 pF @ 400 V	-	109W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
NVBG032N065M3S SIC MOS D2PAK-7L 32MOHM 650V M3S onsemi	3,733	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	52A (Tc)	15V, 18V	44mOhm @ 15A, 18V	4V @ 7.5mA	55 nC @ 18 V	+22V, -8V	1409 pF @ 400 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
IMLT65R026M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,869	RFQ	-	CoolSiC™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	82A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	365W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6
DMWSH120H90SM3Q SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	2,149	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	50.9 nC @ 15 V	+19V, -8V	1090 pF @ 1000 V	-	246W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
SCT070H120G3AG H2PAK-7 STMicroelectronics	9,135	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	37 nC @ 18 V	+18V, -5V	900 pF @ 850 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7

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