STMicroelectronics SCT070H120G3-7

Overview

SCT070H120G3-7 from STMicroelectronics is a silicon carbide (SiC) N-channel Power MOSFET rated for 1200 V drain-source voltage, 63 mΩ typical R_DS(on) at V_GS = 18 V and T_J = 25 °C, and 30 A continuous drain current at T_C = 25 °C. It features an integrated robust intrinsic body diode, low switching energy (E_on = 260 µJ, E_off = 63 µJ), and source-sensing pin for precise gate control-enabling high-efficiency, high-frequency operation in high-voltage DC-DC converters.

For engineers reviewing the SCT070H120G3-7 datasheet, SCT070H120G3-7 pinout, SCT070H120G3-7 application, or SCT070H120G3-7 equivalent, key selection criteria include its 1200 V blocking capability, temperature-stable R_DS(on) (120 mΩ at 175 °C), H²PAK-7 package with dedicated driver source terminal, and SiC-specific switching performance metrics including t_r = 26.6 ns and Q_gd = 14 nC.

Technical Context

This device implements ST's third-generation SiC MOSFET technology, optimized for high-voltage power conversion where thermal stability and fast switching are critical. Its low C_iss (900 pF), C_oss (40 pF), and Cr_ss (5 pF) at V_DS = 850 V enable reduced switching losses and improved EMI behavior in hard-switched topologies.

The H²PAK-7 package integrates separate driver source (pin 2) and power source (pins 3–7) terminals to minimize source inductance in the gate loop, while the tab-mounted drain provides low R_thJC (0.67 °C/W) for efficient heat extraction in high-power applications.

Key Specifications

Pinout & Package

The SCT070H120G3-7 is housed in the H²PAK-7 surface-mount package, featuring a copper-drain tab for low-inductance, high-current power connections and thermally enhanced thermal path. The package includes seven terminals: one drain (tab), one gate, one driver source, and four parallel power source pins for low-impedance return paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and IXFH50N120X2, the SCT070H120G3-7 offers superior gate-loop integrity via driver-source isolation and best-in-class thermal resistance (0.67 °C/W), making it optimal for high-power-density, high-frequency SMPS where layout-induced oscillation and thermal bottlenecks dominate design constraints.

Availability

SCT070H120G3-7 is available at Aetrix Electronics and suitable for photovoltaic string inverters, industrial DC-DC converters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for SCT070H120G3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV, and industrial systems demanding >100 kHz operation and >98% efficiency.

FAQ

What gate drive voltage range is recommended for reliable operation?

The SCT070H120G3-7 specifies a recommended gate-source voltage range of –5 V to +18 V, with absolute maximum ratings of –11 V to +25 V for transient conditions. A negative turn-off bias (–5 V) is strongly advised to prevent spurious turn-on due to Miller coupling, especially in high-di/dt half-bridge configurations.

How does the H²PAK-7 package improve thermal performance compared to TO-247?

The H²PAK-7 package achieves 0.67 °C/W junction-to-case thermal resistance-30% lower than typical TO-247 SiC MOSFETs-due to its large copper drain tab and optimized internal die attach. This enables higher power density without forced airflow, supporting 30 A continuous operation at T_C ≤ 100 °C in compact industrial modules.

Can the intrinsic body diode replace an external anti-parallel diode in synchronous rectification?

Yes-the device's SiC body diode exhibits 12 ns reverse recovery time and only 60 nC Q_rr at 15 A, enabling efficient unidirectional freewheeling in phase-shifted full-bridge and LLC converters without external diodes. However, bidirectional conduction still requires external anti-parallel devices for reverse-biased operation.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 45 A at 800 V, per Figure 1 in DS14386. This reflects the device's ability to sustain short-duration overload without thermal runaway, supporting fault-tolerant designs in UPS and motor drives.