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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHG70N60EF-GE3

SIHG70N60EF-GE3

MOSFET N-CH 600V 70A TO247AC

Vishay Siliconix

7,948 0.00
RFQ
SIHG70N60EF-GE3

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IQFH39N04NM6ATMA1

IQFH39N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

2,674 0.00
RFQ
IQFH39N04NM6ATMA1

Datasheet

OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 63A (Ta), 600A (Tc) 6V, 10V 0.39mOhm @ 100A, 10V 2.8V @ 1.05mA 273 nC @ 10 V ±20V 16400 pF @ 20 V - 3W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
TK35A65W5,S5X

TK35A65W5,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

22 0.00
RFQ
TK35A65W5,S5X

Datasheet

DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHG125N65E-GE3

SIHG125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,526 0.00
RFQ
SIHG125N65E-GE3

Datasheet

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

Infineon Technologies

7,608 0.00
RFQ
IGLT65R110D2ATMA1

Datasheet

CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) - - 1.6V @ 1.3mA 2.4 nC @ 3 V -10V 170 pF @ 400 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IPP022N12NM6AKSA1

IPP022N12NM6AKSA1

TRENCH >=100V

Infineon Technologies

9,464 0.00
RFQ
IPP022N12NM6AKSA1

Datasheet

OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 203A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
SIHK100N65E-T1-GE3

SIHK100N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

6,498 0.00
RFQ
SIHK100N65E-T1-GE3

Datasheet

E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
CCSPG1560N TR PBFREE

CCSPG1560N TR PBFREE

SURFACE MOUNT MOSFET

Central Semiconductor Corp

2,095 0.00
RFQ

-

- 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 150 V 60A (Tj) 5V 7mOhm @ 20A, 5V 2.1V @ 7mA 13 nC @ 5 V +6V, -4V 1450 pF @ 75 V - 200mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 25-CSP (4x6)
G3F320MT12J-TR

G3F320MT12J-TR

1200V 320M TO-263-7 G3F SIC MOSF

GeneSiC Semiconductor

4,982 0.00
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK31A60W,S4VX

TK31A60W,S4VX

MOSFET N-CH 600V 30.8A TO220SIS

Toshiba Semiconductor and Storage

19 0.00
RFQ
TK31A60W,S4VX

Datasheet

DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHP100N65E-GE3

SIHP100N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

8,627 0.00
RFQ
SIHP100N65E-GE3

Datasheet

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB100N65E-GE3

SIHB100N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

2,191 0.00
RFQ
SIHB100N65E-GE3

Datasheet

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
DIW065SIC080

DIW065SIC080

SIC MOSFET, TO-247-3L, N, 36A, 6

Diotec Semiconductor

7,072 0.00
RFQ
DIW065SIC080

Datasheet

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 36A (Tc) 18V 80mOhm @ 15A, 18V 4V @ 5mA 75 nC @ 20 V +18V, -5V 1480 pF @ 600 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
EPC2304

EPC2304

TRANS GAN 200V .005OHM 7QFN

EPC

2,787 0.00
RFQ

-

eGaN® 7-PowerWQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 200 V 102A (Ta) 5V 3.1mOhm @ 32A, 5V 2.5V @ 8mA 24 nC @ 5 V +6V, -4V 3195 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 7-QFN (3x5)
AUIRF7799L2TR

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

6,719 0.00
RFQ
AUIRF7799L2TR

Datasheet

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IMBG65R040M2HXTMA1

IMBG65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,236 0.00
RFQ
IMBG65R040M2HXTMA1

Datasheet

CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V, 20V 49mOhm @ 22.9A, 18V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
TK040N60Z1,S1F

TK040N60Z1,S1F

600V DTMOS6 TO-247 40MOHM

Toshiba Semiconductor and Storage

6,022 0.00
RFQ
TK040N60Z1,S1F

Datasheet

DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Ta) 10V 400mOhm @ 21.2A, 10V 4V @ 2.4mA 85 nC @ 10 V ±30V 5200 pF @ 300 V - 297W (Tc) 150°C - - Through Hole TO-247
SIHH100N65E-T1-GE3

SIHH100N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

6,404 0.00
RFQ
SIHH100N65E-T1-GE3

Datasheet

E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
G3F60MT06L-TR

G3F60MT06L-TR

650V 55M TO-LL G3F SIC MOSFET

GeneSiC Semiconductor

3,954 0.00
RFQ

-

- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 48A (Tc) 15V, 18V 75mOhm @ 15A, 18V 4.3V @ 7mA 45 nC @ 18 V +22V, -10V 1322 pF @ 400 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
IPQC60R040S7XTMA1

IPQC60R040S7XTMA1

MOSFET

Infineon Technologies

6,559 0.00
RFQ
IPQC60R040S7XTMA1

Datasheet

CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
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