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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP100N65E-GE3

Name: SIHP100N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP100N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP100N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP100N65E-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

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Product details

Overview

SIHP100N65E-GE3 from Vishay Siliconix is a 650 V, 30 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.087 Ω R_DS(on) at V_GS = 10 V, 62 nC total gate charge, and Kelvin-source connection for reduced gate noise. It delivers low conduction and switching losses in high-efficiency server and telecom SMPS.

For engineers reviewing the SIHP100N65E-GE3 datasheet, SIHP100N65E-GE3 pinout, SIHP100N65E-GE3 application, or SIHP100N65E-GE3 equivalent, key selection criteria include its 127 mJ single-pulse avalanche energy rating, 0.6 °C/W junction-to-case thermal resistance, and E-series 4th-generation FOM optimization for PFC and industrial motor drive stages.

Technical Context

This MOSFET employs Vishay's 4th-generation E-series silicon technology with optimized cell layout to minimize R_DS(on) × Q_g figure-of-merit (FOM) and effective output capacitance (C_o(er) = 90 pF). Its Kelvin-source configuration separates power and signal source terminals to suppress gate loop noise during high-di/dt switching.

The device supports hard-switched topologies up to 520 V bus voltage with 14 A drain current, exhibiting 362 ns typical reverse recovery time (t_rr) and 5.0 μC Q_rr under 100 A/μs di/dt - enabling robust body diode operation in continuous conduction mode PFC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified to ~565 V DC bus with 15 % margin for transient overvoltage in telecom PSUs
R_DS(on) typ	0.087 Ω @ 10 V - enables <1.7 W conduction loss at 14 A, critical for thermally constrained 1U server power supplies
Q_g max	62 nC - determines gate driver power requirement and switching speed; compatible with standard 1 A peak drivers
E_AS	127 mJ - ensures ruggedness against unclamped inductive switching events in welder and motor drive H-bridges
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case temperature rise, supporting forced-air-cooled designs
C_o(er)	90 pF - reduces capacitive turn-off loss and improves efficiency in >100 kHz ZVS/ZCS resonant converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and Kelvin-source configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source (power), Pin 4 = Source (signal/Kelvin).

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives 10 V logic-level drive; low 1.1 Ω gate input resistance minimizes resonance risk with PCB trace inductance
Drain (Tab)	High-side power node	Electrically connected to metal tab; requires insulated mounting hardware when heatsink is grounded
Source (Pin 3)	Power return path	Carries full load current; routed separately from Kelvin source to avoid IR drop interference on gate control loop
Source (Kelvin, Pin 4)	Sense/reference node	Connects directly to gate driver return; eliminates voltage drop error in gate drive waveform during high di/dt transitions

Key Features

Feature	Design Value
4th-generation E-series silicon	Reduces R_DS(on) × Q_g FOM by 22 % vs. prior generation, lowering combined conduction + switching loss in 100–300 kHz PFC stages
Kelvin-source connection	Separates high-current source path from gate reference path, eliminating false turn-on during 100 A/μs di/dt transients in bridge-leg configurations
Avalanche-rated (UIS)	Withstands 127 mJ single-pulse energy without failure, enabling reliable operation in non-clamped flyback and LLC resonant converter startup
Low C_o(er) (90 pF)	Minimizes stored output capacitance energy (E_oss), reducing turn-off loss and improving light-load efficiency in high-frequency SMPS

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-voltage N-channel switching element handling 520 V DC bus and 14 A RMS current in continuous conduction mode. Use Value: 0.087 Ω R_DS(on) and 62 nC Q_g enable >98.5 % efficiency at full load while maintaining <95 °C junction temperature under forced air cooling.	Use Scenario: Output rectification stage in -48 V telecom DC-DC brick with synchronous rectification and 300 kHz switching. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating with 100 A/μs di/dt during body diode commutation. Use Value: Kelvin-source architecture prevents gate oscillation during fast reverse recovery, eliminating false triggering in high-density telecom modules.
Industrial Motor Drives	Solar PV Inverters
Use Scenario: IGBT replacement in 7.5 kW VFD inverter leg for HVAC compressors, operating at 16 kHz PWM with 400 V DC link. IC Role / Device Role / Timing Role: Hard-switched N-channel power switch in three-phase inverter bridge, conducting 30 A peak phase current. Use Value: 127 mJ E_AS rating ensures survivability during short-circuit fault conditions without external snubbers.	Use Scenario: DC-link switching in string-level 5 kW microinverter with two-stage conversion (boost + H-bridge). IC Role / Device Role / Timing Role: High-side boost switch handling 600 V DC input and 12 A average current in discontinuous conduction mode. Use Value: 650 V V_DS rating provides 20 % margin above 1000 V PV open-circuit voltage, meeting UL 1741 creepage requirements.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element handling 520 V DC bus and 14 A RMS current in continuous conduction mode.

Use Value: 0.087 Ω R_DS(on) and 62 nC Q_g enable >98.5 % efficiency at full load while maintaining <95 °C junction temperature under forced air cooling.

Use Scenario: Output rectification stage in -48 V telecom DC-DC brick with synchronous rectification and 300 kHz switching.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating with 100 A/μs di/dt during body diode commutation.

Use Value: Kelvin-source architecture prevents gate oscillation during fast reverse recovery, eliminating false triggering in high-density telecom modules.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: IGBT replacement in 7.5 kW VFD inverter leg for HVAC compressors, operating at 16 kHz PWM with 400 V DC link.

IC Role / Device Role / Timing Role: Hard-switched N-channel power switch in three-phase inverter bridge, conducting 30 A peak phase current.

Use Value: 127 mJ E_AS rating ensures survivability during short-circuit fault conditions without external snubbers.

Use Scenario: DC-link switching in string-level 5 kW microinverter with two-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: High-side boost switch handling 600 V DC input and 12 A average current in discontinuous conduction mode.

Use Value: 650 V V_DS rating provides 20 % margin above 1000 V PV open-circuit voltage, meeting UL 1741 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N65M5	650 V, 57 A, R_DS(on) = 0.065 Ω, Q_g = 72 nC, TO-247 package, no Kelvin source	Higher current rating but larger footprint and no noise-immune gate control; suited for lower-frequency (<65 kHz), higher-power designs	Select when peak current exceeds 30 A and board space permits TO-247; avoid where gate noise immunity is critical
IXFH50N65X2	650 V, 50 A, R_DS(on) = 0.075 Ω, Q_g = 52 nC, TO-247 package, no Kelvin source	Lower Q_g improves switching speed but lacks Kelvin-source noise suppression; optimized for ZVS soft-switching	Prefer for resonant topologies requiring minimal gate charge; not recommended for hard-switched PFC with high di/dt

Compared with STW62N65M5 and IXFH50N65X2, the SIHP100N65E-GE3 offers unique Kelvin-source noise immunity and optimal FOM for hard-switched 100–300 kHz PFC, while its TO-220AB form factor enables cost-sensitive, space-constrained industrial power designs without sacrificing ruggedness.

Availability

SIHP100N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP100N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and reliability validation.

The SIHP100N65E-GE3 belongs to Vishay's E-series high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP100N65E-GE3 at 100 °C case temperature?

The SIHP100N65E-GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. The SIHP100N65E-GE3 maintains this rating under sustained conduction with adequate heatsinking.

Does SIHP100N65E-GE3 support logic-level gate drive?

No, the SIHP100N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it reliably requires a 10 V gate-source voltage; 5 V logic signals will not fully enhance the channel and result in excessive conduction loss. The SIHP100N65E-GE3 must be paired with a dedicated gate driver capable of delivering ±30 V-rated 10 V swing.

What is the significance of the Kelvin-source configuration in SIHP100N65E-GE3?

The Kelvin-source configuration in the SIHP100N65E-GE3 separates the high-current power source terminal from the low-current gate reference source terminal. This eliminates voltage drop errors across source bond wires during high di/dt switching, preventing false turn-on and improving gate waveform fidelity. In the SIHP100N65E-GE3, this design enables stable operation in bridge-leg topologies with >100 A/μs current transients.

Can SIHP100N65E-GE3 be used in avalanche mode repeatedly?

The SIHP100N65E-GE3 is rated for single-pulse avalanche energy (E_AS) of 127 mJ, but it is not rated for repetitive avalanche operation. The datasheet specifies this as a "single pulse" rating (note a), meaning repeated exposure to avalanche conditions may cause cumulative degradation. For circuits subject to recurring inductive spikes, external clamping or snubbing is required. The SIHP100N65E-GE3 should be operated within its SOA limits for long-term reliability.

What is the typical reverse recovery charge (Q_rr) of SIHP100N65E-GE3's intrinsic body diode?

The SIHP100N65E-GE3 exhibits a typical reverse recovery charge (Q_rr) of 5.0 μC under test conditions of T_J = 25 °C, I_F = 14 A, di/dt = 100 A/μs, and V_R = 25 V. This value reflects the charge stored in the body diode's depletion region during forward conduction and directly impacts switching loss during commutation. The SIHP100N65E-GE3's Q_rr is optimized for use in continuous conduction mode PFC where diode recovery behavior critically affects efficiency.

SIHP100N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2137 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP100N65E-GE3 FAQ

1.How can I place an order for SIHP100N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP100N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP100N65E-GE3 reliable?

The price and inventory of SIHP100N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP100N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP100N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP100N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP100N65E-GE3?

SIHP100N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP100N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP100N65E-GE3?

For technical support, including SIHP100N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP100N65E-GE3 requirements.

6.How does Aetrix verify that SIHP100N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP100N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP100N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP100N65E-GE3?

All SIHP100N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP100N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP100N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP100N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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