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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH100N65E-T1-GE3

Name: SIHH100N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH100N65E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH100N65E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH100N65E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

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Product details

Overview

SIHH100N65E-T1-GE3 from Vishay Siliconix is a 650 V, 28 A (T_C = 25 °C), N-channel enhancement-mode Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.087 Ω (typ.) at V_GS = 10 V, Q_g = 41 nC (typ.), and avalanche-rated UIS capability up to 127 mJ.

For engineers reviewing the SIHH100N65E-T1-GE3 datasheet, SIHH100N65E-T1-GE3 pinout, SIHH100N65E-T1-GE3 application, or SIHH100N65E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced gate noise via Kelvin source, Co(er) = 90 pF for soft-switching performance, and 650 V blocking rating suitable for telecom and server PSU primary-side switching.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology with optimized charge distribution to minimize both conduction loss (via low R_DS(on)) and switching loss (via low Q_gd/Q_g ratio and Co(er)). Its Kelvin source terminal isolates power and signal return paths, suppressing gate drive loop inductance and improving dv/dt immunity during hard switching.

The device supports unclamped inductive switching (UIS) up to 127 mJ and exhibits controlled body diode recovery (Q_rr = 5.0 μC typ., t_rr = 362 ns typ.)-critical for ZVS/ZCS topologies in high-frequency PFC and resonant converters operating up to 520 V DC bus.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V AC input rectified to ~560 V DC bus with margin for surge and ringing in telecom/server PSUs.
R_DS(on) typ. @ 10 V	0.087 Ω - Enables <1.5 W conduction loss at 12 A continuous drain current in thermally optimized layouts.
Q_g max	62 nC - Determines gate driver power requirement; enables efficient 100–300 kHz operation with standard 1–2 A peak drivers.
Co(er)	90 pF - Low energy-related output capacitance reduces turn-off loss and improves light-load efficiency in resonant converters.
E_AS	127 mJ - Rated single-pulse avalanche energy allows robustness against transient overvoltage without external snubbers.
R_thJC max	0.68 °C/W - Enables high-power density thermal design; supports >150 W dissipation with moderate heatsinking at T_C = 100 °C.
V_GS(th)	3.0–5.0 V - Ensures reliable turn-on with standard 10 V gate drive while avoiding spurious conduction near 0 V.

Pinout & Package

SIHH100N65E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring copper-clip construction for low R_DS(on) and enhanced thermal performance. The package includes four terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), and Drain (Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; connects to driver IC output; requires low-inductance routing to minimize ringing.
Pin 2	Kelvin Source	Dedicated low-current source reference for gate driver feedback; isolates power source path to suppress gate oscillation.
Pin 3	Power Source	Main high-current source return; soldered to large PCB copper pour for thermal and current handling.
Pin 4	Drain	High-voltage drain node; connects to DC bus or transformer primary; requires creepage/clearance per IEC 62368-1.

Key Features

Feature	Design Value
4th-generation E-series silicon	Delivers best-in-class R_DS(on) × Q_g FOM of ~3.6 Ω·nC, reducing total switching + conduction loss in high-frequency SMPS.
Kelvin source connection	Separates gate drive return from power source path, lowering effective gate loop inductance by >50% and enabling stable 100+ V/ns dv/dt operation.
Avalanche energy rating (UIS)	127 mJ single-pulse rating eliminates need for external clamping in inductive load transients common in PFC boost stages.
Low Co(er)	90 pF enables faster voltage transition during turn-off, cutting E_off loss by ~25% vs. comparable 650 V MOSFETs with higher Co(er).
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, supporting environmentally compliant industrial and telecom manufacturing.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier and main switch in 300–500 kHz PFC + isolated DC/DC stage. Use Value: 0.087 Ω R_DS(on) and 41 nC Q_g reduce total losses by >1.2 W per device vs. legacy 650 V MOSFETs, improving system efficiency from 95.2% to 96.1% at full load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter operating at 70–100 kHz. Use Value: Kelvin source minimizes gate drive instability under high di/dt conditions (≥100 A/μs), ensuring clean turn-on/turn-off and reducing EMI filter size by 30%.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with two-stage architecture. IC Role / Device Role / Timing Role: High-reliability 650 V switch in DC/DC isolation stage handling 800 V DC bus transients. Use Value: 127 mJ UIS rating withstands lightning-induced surges on PV strings without failure, extending field lifetime beyond 20 years per IEC 61215.	Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Main IGBT replacement in 16 kHz PWM inverter output stage requiring fast, low-loss switching. Use Value: Body diode t_rr = 362 ns (typ.) and Q_rr = 5.0 μC enable clean commutation with minimal shoot-through risk and reduced snubber losses.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC/DC converter with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier and main switch in 300–500 kHz PFC + isolated DC/DC stage.

Use Value: 0.087 Ω R_DS(on) and 41 nC Q_g reduce total losses by >1.2 W per device vs. legacy 650 V MOSFETs, improving system efficiency from 95.2% to 96.1% at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter operating at 70–100 kHz.

Use Value: Kelvin source minimizes gate drive instability under high di/dt conditions (≥100 A/μs), ensuring clean turn-on/turn-off and reducing EMI filter size by 30%.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with two-stage architecture.

IC Role / Device Role / Timing Role: High-reliability 650 V switch in DC/DC isolation stage handling 800 V DC bus transients.

Use Value: 127 mJ UIS rating withstands lightning-induced surges on PV strings without failure, extending field lifetime beyond 20 years per IEC 61215.

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main IGBT replacement in 16 kHz PWM inverter output stage requiring fast, low-loss switching.

Use Value: Body diode t_rr = 362 ns (typ.) and Q_rr = 5.0 μC enable clean commutation with minimal shoot-through risk and reduced snubber losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N65M5	650 V, 65 A, R_DS(on) = 0.065 Ω, no Kelvin source, TO-247 package	Larger footprint, higher thermal resistance (R_thJC = 0.85 °C/W), unsuitable for ultra-dense layouts	Prefer when board space permits and Kelvin source noise suppression is not required.
IXFH60N65X2	650 V, 60 A, R_DS(on) = 0.055 Ω, HiPerFET™ Gen 2, TO-247, no Kelvin source	Higher current rating but larger package and higher Q_g (92 nC), increasing driver complexity	Select for higher current headroom where layout area and gate drive capability allow.

Compared with STW65N65M5 and IXFH60N65X2, SIHH100N65E-T1-GE3 offers superior power density (8 mm × 8 mm), lower gate drive loss (41 nC vs. ≥92 nC), and inherent dv/dt noise immunity via Kelvin source-making it optimal for compact, high-frequency, high-reliability server and telecom power designs.

Availability

SIHH100N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHH100N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and infrastructure markets.

The SIHH100N65E-T1-GE3 belongs to Vishay's E-series Power MOSFET family, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in datacenter, telecom, and renewable energy systems where thermal performance and switching integrity are critical.

FAQ

What is the maximum continuous drain current rating for SIHH100N65E-T1-GE3 at 100 °C case temperature?

The SIHH100N65E-T1-GE3 has a continuous drain current (I_D) rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 28 A rating at 25 °C and ensures safe operation within thermal limits when mounted on a properly designed PCB with adequate copper area and airflow. The linear derating factor is 1.47 W/°C.

Does SIHH100N65E-T1-GE3 support avalanche operation, and what is its rated energy?

Yes, SIHH100N65E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ, tested per JEDEC JESD24-1. This rating applies under defined conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.0 A. The SIHH100N65E-T1-GE3 can safely absorb such energy without parametric shift or failure.

How does the Kelvin source connection in SIHH100N65E-T1-GE3 improve gate drive stability?

The Kelvin source (Pin 2) in SIHH100N65E-T1-GE3 provides a dedicated low-current return path for the gate driver, decoupling it from high di/dt power source current flowing through Pin 3. This reduces gate loop inductance and prevents voltage spikes across source inductance that cause false turn-on or oscillation. As a result, SIHH100N65E-T1-GE3 maintains clean switching waveforms even at dv/dt rates up to 100 V/ns.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH100N65E-T1-GE3, and why does it matter?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHH100N65E-T1-GE3 is 5.0 μC at T_J = 25 °C, I_F = 14 A, di/dt = 100 A/μs, and V_R = 25 V. Low Q_rr directly reduces commutation loss and EMI generation during freewheeling in bridge configurations-especially critical in PFC and motor drive inverters where body diode conduction occurs regularly.

Is SIHH100N65E-T1-GE3 compatible with standard PowerPAK® 8 × 8 PCB footprints?

Yes, SIHH100N65E-T1-GE3 uses the standardized PowerPAK® 8 × 8 outline (8.0 mm × 8.0 mm) with documented pad pattern in Vishay document #68441. Its pin assignment (Pin 1: Gate, Pin 2: Kelvin Source, Pin 3: Power Source, Pin 4: Drain) matches the mechanical drawing, and the recommended minimum pads ensure manufacturable solder joints and optimal thermal transfer. SIHH100N65E-T1-GE3 is fully compatible with industry-standard reflow profiles for lead-free assembly.

SIHH100N65E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2137 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH100N65E-T1-GE3 FAQ

1.How can I place an order for SIHH100N65E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH100N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH100N65E-T1-GE3 reliable?

The price and inventory of SIHH100N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH100N65E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH100N65E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH100N65E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH100N65E-T1-GE3?

SIHH100N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH100N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH100N65E-T1-GE3?

For technical support, including SIHH100N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH100N65E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH100N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH100N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH100N65E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH100N65E-T1-GE3?

All SIHH100N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH100N65E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH100N65E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH100N65E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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